The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
La condition fondamentale unique du mode transversal, à la fois dans les diodes laser DH à trois couches et dans les diodes laser asymétriques à hétérostructure à confinement séparé (SCH) à cinq couches fonctionnant à une longueur d'onde de 1.55, XNUMX µm, a été étudiée sur la base de l'indice de réfraction effectif. La formule dérivée simple peut être appliquée pour obtenir l'indice de réfraction effectif du mode dominant dans les diodes laser DFB afin de déterminer la période d'ondulation correspondant à la longueur d'onde conçue.
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H. GHAFOORI-SHIRAZ, "Single Transverse Mode Condition in Long Wavelength SCH Semiconductor Laser Diodes" in IEICE TRANSACTIONS on transactions,
vol. E70-E, no. 2, pp. 130-134, February 1987, doi: .
Abstract: The single fundamental transverse mode condition, both in three-layer DH, and asymmetrical five-layer separate confinement heterostructure (SCH) laser diodes operating at 1.55 µm wavelength, has been investigated based on the effective refractive index. The simple derived formula can be applied to obtain the effective refractive index of the dominant mode in DFB laser diodes to determine the corrugation period corresponding to the designed wavelength.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e70-e_2_130/_p
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@ARTICLE{e70-e_2_130,
author={H. GHAFOORI-SHIRAZ, },
journal={IEICE TRANSACTIONS on transactions},
title={Single Transverse Mode Condition in Long Wavelength SCH Semiconductor Laser Diodes},
year={1987},
volume={E70-E},
number={2},
pages={130-134},
abstract={The single fundamental transverse mode condition, both in three-layer DH, and asymmetrical five-layer separate confinement heterostructure (SCH) laser diodes operating at 1.55 µm wavelength, has been investigated based on the effective refractive index. The simple derived formula can be applied to obtain the effective refractive index of the dominant mode in DFB laser diodes to determine the corrugation period corresponding to the designed wavelength.},
keywords={},
doi={},
ISSN={},
month={February},}
Copier
TY - JOUR
TI - Single Transverse Mode Condition in Long Wavelength SCH Semiconductor Laser Diodes
T2 - IEICE TRANSACTIONS on transactions
SP - 130
EP - 134
AU - H. GHAFOORI-SHIRAZ
PY - 1987
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E70-E
IS - 2
JA - IEICE TRANSACTIONS on transactions
Y1 - February 1987
AB - The single fundamental transverse mode condition, both in three-layer DH, and asymmetrical five-layer separate confinement heterostructure (SCH) laser diodes operating at 1.55 µm wavelength, has been investigated based on the effective refractive index. The simple derived formula can be applied to obtain the effective refractive index of the dominant mode in DFB laser diodes to determine the corrugation period corresponding to the designed wavelength.
ER -