The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Cet article présente un LNA balun antibruit sans inductance à large bande avec deux modes de gain, une faible NF et une haute linéarité pour les applications 3.3G LTE et à bande de fréquence intermédiaire (par exemple 3.6-4.8 GHz, 5-5 GHz) fabriquées en CMOS 65 nm. Le LNA proposé est testé en liaison et présente un NF minimum de 2.2 dB et un IIP3 maximum de -3.5 dBm. Bénéficiant d'une inductance de polarisation hors puce dans l'étage CG et d'un tampon à couplage croisé, le LNA occupe une fréquence de fonctionnement élevée jusqu'à 5 GHz avec une linéarité et une NF remarquables ainsi qu'une zone compacte.
Youming ZHANG
Southeast University
Fengyi HUANG
Southeast University
Lijuan YANG
Southeast University
Xusheng TANG
Broadchip Co., Ltd.
Zhen CHEN
Southeast University
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Youming ZHANG, Fengyi HUANG, Lijuan YANG, Xusheng TANG, Zhen CHEN, "A 2-5GHz Wideband Inductorless Low Noise Amplifier for LTE and Intermediate-Frequency-Band 5G Applications" in IEICE TRANSACTIONS on Fundamentals,
vol. E102-A, no. 1, pp. 209-210, January 2019, doi: 10.1587/transfun.E102.A.209.
Abstract: This paper presents a wideband inductorless noise-cancelling balun LNA with two gain modes, low NF, and high-linearity for LTE and intermediate-frequency-band (eg. 3.3-3.6GHz, 4.8-5GHz) 5G applications fabricated in 65nm CMOS. The proposed LNA is bonding tested and exhibits a minimum NF of 2.2dB and maximum IIP3 of -3.5dBm. Taking advantage of an off-chip bias inductor in CG stage and a cross-coupled buffer, the LNA occupies high operation frequency up to 5GHz with remarkable linearity and NF as well as compact area.
URL: https://global.ieice.org/en_transactions/fundamentals/10.1587/transfun.E102.A.209/_p
Copier
@ARTICLE{e102-a_1_209,
author={Youming ZHANG, Fengyi HUANG, Lijuan YANG, Xusheng TANG, Zhen CHEN, },
journal={IEICE TRANSACTIONS on Fundamentals},
title={A 2-5GHz Wideband Inductorless Low Noise Amplifier for LTE and Intermediate-Frequency-Band 5G Applications},
year={2019},
volume={E102-A},
number={1},
pages={209-210},
abstract={This paper presents a wideband inductorless noise-cancelling balun LNA with two gain modes, low NF, and high-linearity for LTE and intermediate-frequency-band (eg. 3.3-3.6GHz, 4.8-5GHz) 5G applications fabricated in 65nm CMOS. The proposed LNA is bonding tested and exhibits a minimum NF of 2.2dB and maximum IIP3 of -3.5dBm. Taking advantage of an off-chip bias inductor in CG stage and a cross-coupled buffer, the LNA occupies high operation frequency up to 5GHz with remarkable linearity and NF as well as compact area.},
keywords={},
doi={10.1587/transfun.E102.A.209},
ISSN={1745-1337},
month={January},}
Copier
TY - JOUR
TI - A 2-5GHz Wideband Inductorless Low Noise Amplifier for LTE and Intermediate-Frequency-Band 5G Applications
T2 - IEICE TRANSACTIONS on Fundamentals
SP - 209
EP - 210
AU - Youming ZHANG
AU - Fengyi HUANG
AU - Lijuan YANG
AU - Xusheng TANG
AU - Zhen CHEN
PY - 2019
DO - 10.1587/transfun.E102.A.209
JO - IEICE TRANSACTIONS on Fundamentals
SN - 1745-1337
VL - E102-A
IS - 1
JA - IEICE TRANSACTIONS on Fundamentals
Y1 - January 2019
AB - This paper presents a wideband inductorless noise-cancelling balun LNA with two gain modes, low NF, and high-linearity for LTE and intermediate-frequency-band (eg. 3.3-3.6GHz, 4.8-5GHz) 5G applications fabricated in 65nm CMOS. The proposed LNA is bonding tested and exhibits a minimum NF of 2.2dB and maximum IIP3 of -3.5dBm. Taking advantage of an off-chip bias inductor in CG stage and a cross-coupled buffer, the LNA occupies high operation frequency up to 5GHz with remarkable linearity and NF as well as compact area.
ER -