The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Un circuit de démarrage intermittent (ISC) tolérant les variations de température qui supprime le courant de repos jusqu'à 300 nA à 0.48 V a été développé. L'ISC est un circuit clé pour un capteur sans fil sans pile capable de détecter un courant de génération de 1 μA de sources de récupération d'énergie à partir des intervalles de signaux sans fil. L'ISC se compose d'un détecteur à très basse tension composé d'un MOSFET de type à déplétion et de MOSFET à faible Vth, d'un circuit de pompe de charge amplifié par grille de type Dickson et d'un circuit de commande de commutateur d'alimentation. Le détecteur se compose d'un comparateur de référence de tension et d'un circuit de verrouillage commandé par rétroaction pour une fonction d'hystérésis. Le comparateur de référence de tension, qui possède un étage de source commune avec une charge source à courant constant repliée composée d'un nMOSFET de type à déplétion, permet de réduire la dépendance à la température de la tension de détection, tout en supprimant le courant de repos à 300 nA à 0.48. V. L'ISC fabriqué avec la technologie CMOS silicium sur isolant entièrement appauvri (FD-SOI) supprime également la variation du courant de repos. Pour vérifier l'efficacité du circuit, l'ISC a été fabriqué selon un processus CMOS triple Vth FD-SOI de 0.8 µm. Expérience sur le système fabriqué, l'ISC augmente la tension d'entrée de 0.48 V à 2.4 V tout en supprimant le courant de repos à moins de 300 nA à 0.48 V. Le coefficient de température mesuré de la tension de détection était de ± 50 ppm/°C. La fluctuation du courant de repos était de 250 nA ± 90 nA dans la plage de température de 0°C à 40°C. Un capteur de récupération d'énergie intermittente avec l'ISC a également été fabriqué. Le capteur pourrait détecter un courant de génération de 1 μA au niveau des sources EH avec une précision de ± 15 % dans la plage de température de 0°C à 40°C. Il a également été appliqué avec succès à un système de capteurs de surveillance d’usine sans fil auto-alimenté.
Minoru SUDO
ABLIC Inc.,Ritsumeikan University
Fumiyasu UTSUNOMIYA
ABLIC Inc.,Ritsumeikan University
Ami TANAKA
Ritsumeikan University
Takakuni DOUSEKI
Ritsumeikan University
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Minoru SUDO, Fumiyasu UTSUNOMIYA, Ami TANAKA, Takakuni DOUSEKI, "Temperature-Robust 0.48-V FD-SOI Intermittent Startup Circuit with 300-nA Quiescent Current for Batteryless Wireless Sensor Capable of 1-μA Energy Harvesting Sources" in IEICE TRANSACTIONS on Fundamentals,
vol. E104-A, no. 2, pp. 506-515, February 2021, doi: 10.1587/transfun.2020GCP0005.
Abstract: A temperature-variation-tolerant intermittent startup circuit (ISC) that suppresses quiescent current to 300nA at 0.48V was developed. The ISC is a key circuit for a batteryless wireless sensor that can detect a 1μA generation current of energy harvesting sources from the intervals of wireless signals. The ISC consists of an ultralow-voltage detector composed of a depletion-type MOSFET and low-Vth MOSFETs, a Dickson-type gate-boosted charge pump circuit, and a power-switch control circuit. The detector consists of a voltage reference comparator and a feedback-controlled latch circuit for a hysteresis function. The voltage reference comparator, which has a common source stage with a folded constant-current-source load composed of a depletion-type nMOSFET, makes it possible to reduce the temperature dependency of the detection voltage, while suppressing the quiescent current to 300nA at 0.48V. The ISC fabricated with fully-depleted silicon-on-insulator (FD-SOI) CMOS technology also suppresses the variation of the quiescent current. To verify the effectiveness of the circuit, the ISC was fabricated in a 0.8-μm triple-Vth FD-SOI CMOS process. An experiment on the fabricated system, the ISC boosts the input voltage of 0.48V to 2.4V while suppressing the quiescent current to less than 300nA at 0.48V. The measured temperature coefficient of the detection voltage was ±50ppm/°C. The fluctuation of the quiescent current was 250nA ± 90nA in the temperature range from 0°C to 40°C. An intermittent energy harvesting sensor with the ISC was also fabricated. The sensor could detect a generation current of 1μA at EH sources within an accuracy of ±15% in the temperature range from 0°C to 40°C. It was also successfully applied to a self-powered wireless plant-monitoring sensor system.
URL: https://global.ieice.org/en_transactions/fundamentals/10.1587/transfun.2020GCP0005/_p
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@ARTICLE{e104-a_2_506,
author={Minoru SUDO, Fumiyasu UTSUNOMIYA, Ami TANAKA, Takakuni DOUSEKI, },
journal={IEICE TRANSACTIONS on Fundamentals},
title={Temperature-Robust 0.48-V FD-SOI Intermittent Startup Circuit with 300-nA Quiescent Current for Batteryless Wireless Sensor Capable of 1-μA Energy Harvesting Sources},
year={2021},
volume={E104-A},
number={2},
pages={506-515},
abstract={A temperature-variation-tolerant intermittent startup circuit (ISC) that suppresses quiescent current to 300nA at 0.48V was developed. The ISC is a key circuit for a batteryless wireless sensor that can detect a 1μA generation current of energy harvesting sources from the intervals of wireless signals. The ISC consists of an ultralow-voltage detector composed of a depletion-type MOSFET and low-Vth MOSFETs, a Dickson-type gate-boosted charge pump circuit, and a power-switch control circuit. The detector consists of a voltage reference comparator and a feedback-controlled latch circuit for a hysteresis function. The voltage reference comparator, which has a common source stage with a folded constant-current-source load composed of a depletion-type nMOSFET, makes it possible to reduce the temperature dependency of the detection voltage, while suppressing the quiescent current to 300nA at 0.48V. The ISC fabricated with fully-depleted silicon-on-insulator (FD-SOI) CMOS technology also suppresses the variation of the quiescent current. To verify the effectiveness of the circuit, the ISC was fabricated in a 0.8-μm triple-Vth FD-SOI CMOS process. An experiment on the fabricated system, the ISC boosts the input voltage of 0.48V to 2.4V while suppressing the quiescent current to less than 300nA at 0.48V. The measured temperature coefficient of the detection voltage was ±50ppm/°C. The fluctuation of the quiescent current was 250nA ± 90nA in the temperature range from 0°C to 40°C. An intermittent energy harvesting sensor with the ISC was also fabricated. The sensor could detect a generation current of 1μA at EH sources within an accuracy of ±15% in the temperature range from 0°C to 40°C. It was also successfully applied to a self-powered wireless plant-monitoring sensor system.},
keywords={},
doi={10.1587/transfun.2020GCP0005},
ISSN={1745-1337},
month={February},}
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TY - JOUR
TI - Temperature-Robust 0.48-V FD-SOI Intermittent Startup Circuit with 300-nA Quiescent Current for Batteryless Wireless Sensor Capable of 1-μA Energy Harvesting Sources
T2 - IEICE TRANSACTIONS on Fundamentals
SP - 506
EP - 515
AU - Minoru SUDO
AU - Fumiyasu UTSUNOMIYA
AU - Ami TANAKA
AU - Takakuni DOUSEKI
PY - 2021
DO - 10.1587/transfun.2020GCP0005
JO - IEICE TRANSACTIONS on Fundamentals
SN - 1745-1337
VL - E104-A
IS - 2
JA - IEICE TRANSACTIONS on Fundamentals
Y1 - February 2021
AB - A temperature-variation-tolerant intermittent startup circuit (ISC) that suppresses quiescent current to 300nA at 0.48V was developed. The ISC is a key circuit for a batteryless wireless sensor that can detect a 1μA generation current of energy harvesting sources from the intervals of wireless signals. The ISC consists of an ultralow-voltage detector composed of a depletion-type MOSFET and low-Vth MOSFETs, a Dickson-type gate-boosted charge pump circuit, and a power-switch control circuit. The detector consists of a voltage reference comparator and a feedback-controlled latch circuit for a hysteresis function. The voltage reference comparator, which has a common source stage with a folded constant-current-source load composed of a depletion-type nMOSFET, makes it possible to reduce the temperature dependency of the detection voltage, while suppressing the quiescent current to 300nA at 0.48V. The ISC fabricated with fully-depleted silicon-on-insulator (FD-SOI) CMOS technology also suppresses the variation of the quiescent current. To verify the effectiveness of the circuit, the ISC was fabricated in a 0.8-μm triple-Vth FD-SOI CMOS process. An experiment on the fabricated system, the ISC boosts the input voltage of 0.48V to 2.4V while suppressing the quiescent current to less than 300nA at 0.48V. The measured temperature coefficient of the detection voltage was ±50ppm/°C. The fluctuation of the quiescent current was 250nA ± 90nA in the temperature range from 0°C to 40°C. An intermittent energy harvesting sensor with the ISC was also fabricated. The sensor could detect a generation current of 1μA at EH sources within an accuracy of ±15% in the temperature range from 0°C to 40°C. It was also successfully applied to a self-powered wireless plant-monitoring sensor system.
ER -