The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Cet article présente une nouvelle technique pour modéliser avec précision les dispositifs MOS unidirectionnels à drain légèrement dopé haute tension (MOS HV) en étendant le modèle MOS HV bidirectionnel et en adoptant une nouvelle méthode d'extraction de paramètres. Nous avons déjà fait état d'un modèle SPICE pour les dispositifs HV MOS bidirectionnels basés sur BSIM3v3. Cependant, si nous appliquons ce modèle MOS HT bidirectionnel et sa technique d'extraction de paramètres directement aux dispositifs MOS HT unidirectionnels, il existe de grands écarts entre les valeurs mesurées et simulées. I-V caractéristiques des dispositifs unidirectionnels. Cet article étend le modèle bidirectionnel HV MOS et adopte une nouvelle technique d’extraction de paramètres. En utilisant les paramètres extraits avec la nouvelle méthode, le I-V caractéristiques de l'unidirectionnel nLe dispositif HV MOS à canal unique correspond bien aux résultats mesurés. Étant donné que notre méthode ne modifie aucune équation du modèle BSIM3v3, elle peut être appliquée à n'importe quel simulateur SPICE sur lequel le modèle BSIM3v3 s'exécute.
Takao MYONO
Eiji NISHIBE
Shuichi KIKUCHI
Katsuhiko IWATSU
Takuya SUZUKI
Yoshisato SASAKI
Kazuo ITOH
Haruo KOBAYASHI
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Copier
Takao MYONO, Eiji NISHIBE, Shuichi KIKUCHI, Katsuhiko IWATSU, Takuya SUZUKI, Yoshisato SASAKI, Kazuo ITOH, Haruo KOBAYASHI, "Modeling and Parameter Extraction Technique for Uni-Directional HV MOS Devices" in IEICE TRANSACTIONS on Fundamentals,
vol. E83-A, no. 3, pp. 412-420, March 2000, doi: .
Abstract: This paper presents a new technique for accurately modeling uni-directional High-Voltage lightly-doped- drain MOS (HV MOS) devices by extending the bi- directional HV MOS model and adopting a new parameter extraction method. We have already reported on a SPICE model for bi-directional HV MOS devices based on BSIM3v3. However, if we apply this bi- directional HV MOS model and its parameter extraction technique directly to uni-directional HV MOS devices, there are large discrepancies between the measured and simulated I-V characteristics of the uni- directional devices. This paper extends the bi- directional HV MOS model, and adopts a new parameter extraction technique. Using parameters extracted with the new method, the simulated I-V characteristics of the uni-directional n-channel HV MOS device match the measured results well. Since our method does not change any model equations of BSIM3v3, it can be applied to any SPICE simulator on which the BSIM3v3 model runs.
URL: https://global.ieice.org/en_transactions/fundamentals/10.1587/e83-a_3_412/_p
Copier
@ARTICLE{e83-a_3_412,
author={Takao MYONO, Eiji NISHIBE, Shuichi KIKUCHI, Katsuhiko IWATSU, Takuya SUZUKI, Yoshisato SASAKI, Kazuo ITOH, Haruo KOBAYASHI, },
journal={IEICE TRANSACTIONS on Fundamentals},
title={Modeling and Parameter Extraction Technique for Uni-Directional HV MOS Devices},
year={2000},
volume={E83-A},
number={3},
pages={412-420},
abstract={This paper presents a new technique for accurately modeling uni-directional High-Voltage lightly-doped- drain MOS (HV MOS) devices by extending the bi- directional HV MOS model and adopting a new parameter extraction method. We have already reported on a SPICE model for bi-directional HV MOS devices based on BSIM3v3. However, if we apply this bi- directional HV MOS model and its parameter extraction technique directly to uni-directional HV MOS devices, there are large discrepancies between the measured and simulated I-V characteristics of the uni- directional devices. This paper extends the bi- directional HV MOS model, and adopts a new parameter extraction technique. Using parameters extracted with the new method, the simulated I-V characteristics of the uni-directional n-channel HV MOS device match the measured results well. Since our method does not change any model equations of BSIM3v3, it can be applied to any SPICE simulator on which the BSIM3v3 model runs.},
keywords={},
doi={},
ISSN={},
month={March},}
Copier
TY - JOUR
TI - Modeling and Parameter Extraction Technique for Uni-Directional HV MOS Devices
T2 - IEICE TRANSACTIONS on Fundamentals
SP - 412
EP - 420
AU - Takao MYONO
AU - Eiji NISHIBE
AU - Shuichi KIKUCHI
AU - Katsuhiko IWATSU
AU - Takuya SUZUKI
AU - Yoshisato SASAKI
AU - Kazuo ITOH
AU - Haruo KOBAYASHI
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Fundamentals
SN -
VL - E83-A
IS - 3
JA - IEICE TRANSACTIONS on Fundamentals
Y1 - March 2000
AB - This paper presents a new technique for accurately modeling uni-directional High-Voltage lightly-doped- drain MOS (HV MOS) devices by extending the bi- directional HV MOS model and adopting a new parameter extraction method. We have already reported on a SPICE model for bi-directional HV MOS devices based on BSIM3v3. However, if we apply this bi- directional HV MOS model and its parameter extraction technique directly to uni-directional HV MOS devices, there are large discrepancies between the measured and simulated I-V characteristics of the uni- directional devices. This paper extends the bi- directional HV MOS model, and adopts a new parameter extraction technique. Using parameters extracted with the new method, the simulated I-V characteristics of the uni-directional n-channel HV MOS device match the measured results well. Since our method does not change any model equations of BSIM3v3, it can be applied to any SPICE simulator on which the BSIM3v3 model runs.
ER -