The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Cet article propose un modèle FET non linéaire amélioré ainsi que sa procédure d'extraction de paramètres adaptée à la prédiction précise des niveaux de produits d'intermodulation (IM) et des réponses parasites dans les applications actives et passives. Ce nouveau modèle permet une capture précise du comportement du courant de drain et de ses dérivées par rapport à la tension de grille et à la tension de drain dans les régions saturées et linéaires du I-V domaine de polarisation. Il a été constaté que ce modèle prédit avec précision l'effet dépendant du biais. S-Paramètres ainsi que les niveaux de l'IM pour les applications d'amplificateur et de mélangeur jusqu'aux fréquences d'ondes millimétriques.
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Copier
Kohei FUJII, Yasuhiko HARA, Fadhel M. GHANNOUCHI, Toshiyuki YAKABE, Hatsuo YABE, "A Nonlinear GaAs FET Model Suitable for Active and Passive MM-Wave Applications" in IEICE TRANSACTIONS on Fundamentals,
vol. E83-A, no. 2, pp. 228-235, February 2000, doi: .
Abstract: This paper proposes an improved nonlinear FET model along with its parameter extraction procedure suitable for the accurate prediction of inter-modulation product's levels (IM) and spurious responses in active and passive applications. This new model allows accurate capture of the drain current behavior and its derivatives with respect to the gate voltage and the drain voltage in the both the saturated and linear regions of the I-V biasing domain. It was found that this model accurately predicts the bias-dependent S-parameters as well as IM's levels for both amplifier and mixer applications up to mm-wave frequencies.
URL: https://global.ieice.org/en_transactions/fundamentals/10.1587/e83-a_2_228/_p
Copier
@ARTICLE{e83-a_2_228,
author={Kohei FUJII, Yasuhiko HARA, Fadhel M. GHANNOUCHI, Toshiyuki YAKABE, Hatsuo YABE, },
journal={IEICE TRANSACTIONS on Fundamentals},
title={A Nonlinear GaAs FET Model Suitable for Active and Passive MM-Wave Applications},
year={2000},
volume={E83-A},
number={2},
pages={228-235},
abstract={This paper proposes an improved nonlinear FET model along with its parameter extraction procedure suitable for the accurate prediction of inter-modulation product's levels (IM) and spurious responses in active and passive applications. This new model allows accurate capture of the drain current behavior and its derivatives with respect to the gate voltage and the drain voltage in the both the saturated and linear regions of the I-V biasing domain. It was found that this model accurately predicts the bias-dependent S-parameters as well as IM's levels for both amplifier and mixer applications up to mm-wave frequencies.},
keywords={},
doi={},
ISSN={},
month={February},}
Copier
TY - JOUR
TI - A Nonlinear GaAs FET Model Suitable for Active and Passive MM-Wave Applications
T2 - IEICE TRANSACTIONS on Fundamentals
SP - 228
EP - 235
AU - Kohei FUJII
AU - Yasuhiko HARA
AU - Fadhel M. GHANNOUCHI
AU - Toshiyuki YAKABE
AU - Hatsuo YABE
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Fundamentals
SN -
VL - E83-A
IS - 2
JA - IEICE TRANSACTIONS on Fundamentals
Y1 - February 2000
AB - This paper proposes an improved nonlinear FET model along with its parameter extraction procedure suitable for the accurate prediction of inter-modulation product's levels (IM) and spurious responses in active and passive applications. This new model allows accurate capture of the drain current behavior and its derivatives with respect to the gate voltage and the drain voltage in the both the saturated and linear regions of the I-V biasing domain. It was found that this model accurately predicts the bias-dependent S-parameters as well as IM's levels for both amplifier and mixer applications up to mm-wave frequencies.
ER -