The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Nous avons fabriqué des capteurs de contraintes VDP (van der Pauw) sur des surfaces (111) en silicium. Ce travail se concentre sur l'étude des effets de déformation dans les capteurs de contraintes VDP, qui ont été généralement ignorés dans les travaux précédents, pour les mesures précises des contraintes de puce dans les boîtiers électroniques. La sensibilité aux contraintes a été observée comme étant environ 10 % plus grande pour les capteurs VDP de type p que pour les capteurs VDP de type n.
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Chun-Hyung CHO, Ginkyu CHOI, Ho-Young CHA, "Strain Effects in van der Pauw (VDP) Stress Sensor Fabricated on (111) Silicon" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 5, pp. 640-643, May 2010, doi: 10.1587/transele.E93.C.640.
Abstract: We have fabricated VDP (van der Pauw) stress sensors on (111) silicon surfaces. This work focuses on a study of strain effects in VDP stress sensors, which were generally ignored in previous works, for the precise measurements of die stresses in electronic packages. The stress sensitivity was observed to be approximately 10% larger for p-type VDP sensors compared to n-type VDP sensors.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.640/_p
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@ARTICLE{e93-c_5_640,
author={Chun-Hyung CHO, Ginkyu CHOI, Ho-Young CHA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Strain Effects in van der Pauw (VDP) Stress Sensor Fabricated on (111) Silicon},
year={2010},
volume={E93-C},
number={5},
pages={640-643},
abstract={We have fabricated VDP (van der Pauw) stress sensors on (111) silicon surfaces. This work focuses on a study of strain effects in VDP stress sensors, which were generally ignored in previous works, for the precise measurements of die stresses in electronic packages. The stress sensitivity was observed to be approximately 10% larger for p-type VDP sensors compared to n-type VDP sensors.},
keywords={},
doi={10.1587/transele.E93.C.640},
ISSN={1745-1353},
month={May},}
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TY - JOUR
TI - Strain Effects in van der Pauw (VDP) Stress Sensor Fabricated on (111) Silicon
T2 - IEICE TRANSACTIONS on Electronics
SP - 640
EP - 643
AU - Chun-Hyung CHO
AU - Ginkyu CHOI
AU - Ho-Young CHA
PY - 2010
DO - 10.1587/transele.E93.C.640
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2010
AB - We have fabricated VDP (van der Pauw) stress sensors on (111) silicon surfaces. This work focuses on a study of strain effects in VDP stress sensors, which were generally ignored in previous works, for the precise measurements of die stresses in electronic packages. The stress sensitivity was observed to be approximately 10% larger for p-type VDP sensors compared to n-type VDP sensors.
ER -