The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Un HfO2 comme couche de stockage de charge avec une épaisseur physique inférieure à 4 nm dans l'oxyde de silicium à haute teneur en silicium.k La mémoire flash oxyde-oxyde-silicium (SOHOS) a été étudiée. Comparé à la mémoire flash conventionnelle SONOS (oxyde de silicium-nitrure-oxyde-silicium), le SOHOS présente une vitesse de fonctionnement lente et présente des caractéristiques de rétention moins bonnes. Ceux-ci sont attribués à la fine épaisseur physique inférieure à 4 nm et à la cristallisation du HfO2 pour contribuer à la migration latérale de la charge piégée dans la couche de piégeage pendant le processus de recuit à haute température.
Jae Sub OH
Kwang Il CHOI
Young Su KIM
Min Ho KANG
Myeong Ho SONG
Sung Kyu LIM
Dong Eun YOO
Jeong Gyu PARK
Hi Deok LEE
Ga Won LEE
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Jae Sub OH, Kwang Il CHOI, Young Su KIM, Min Ho KANG, Myeong Ho SONG, Sung Kyu LIM, Dong Eun YOO, Jeong Gyu PARK, Hi Deok LEE, Ga Won LEE, "SONOS-Type Flash Memory with HfO2 Thinner than 4 nm as Trapping Layer Using Atomic Layer Deposition" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 5, pp. 590-595, May 2010, doi: 10.1587/transele.E93.C.590.
Abstract: A HfO2 as the charge-storage layer with the physical thickness thinner than 4 nm in silicon-oxide-high-k oxide-oxide-silicon (SOHOS) flash memory was investigated. Compared to the conventional silicon-oxide-nitride-oxide-silicon (SONOS) flash memory, the SOHOS shows the slow operational speed and exhibits the poorer retention characteristics. These are attributed to the thin physical thickness below 4 nm and the crystallization of the HfO2 to contribute the lateral migration of the trapped charge in the trapping layer during high temperature annealing process.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.590/_p
Copier
@ARTICLE{e93-c_5_590,
author={Jae Sub OH, Kwang Il CHOI, Young Su KIM, Min Ho KANG, Myeong Ho SONG, Sung Kyu LIM, Dong Eun YOO, Jeong Gyu PARK, Hi Deok LEE, Ga Won LEE, },
journal={IEICE TRANSACTIONS on Electronics},
title={SONOS-Type Flash Memory with HfO2 Thinner than 4 nm as Trapping Layer Using Atomic Layer Deposition},
year={2010},
volume={E93-C},
number={5},
pages={590-595},
abstract={A HfO2 as the charge-storage layer with the physical thickness thinner than 4 nm in silicon-oxide-high-k oxide-oxide-silicon (SOHOS) flash memory was investigated. Compared to the conventional silicon-oxide-nitride-oxide-silicon (SONOS) flash memory, the SOHOS shows the slow operational speed and exhibits the poorer retention characteristics. These are attributed to the thin physical thickness below 4 nm and the crystallization of the HfO2 to contribute the lateral migration of the trapped charge in the trapping layer during high temperature annealing process.},
keywords={},
doi={10.1587/transele.E93.C.590},
ISSN={1745-1353},
month={May},}
Copier
TY - JOUR
TI - SONOS-Type Flash Memory with HfO2 Thinner than 4 nm as Trapping Layer Using Atomic Layer Deposition
T2 - IEICE TRANSACTIONS on Electronics
SP - 590
EP - 595
AU - Jae Sub OH
AU - Kwang Il CHOI
AU - Young Su KIM
AU - Min Ho KANG
AU - Myeong Ho SONG
AU - Sung Kyu LIM
AU - Dong Eun YOO
AU - Jeong Gyu PARK
AU - Hi Deok LEE
AU - Ga Won LEE
PY - 2010
DO - 10.1587/transele.E93.C.590
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2010
AB - A HfO2 as the charge-storage layer with the physical thickness thinner than 4 nm in silicon-oxide-high-k oxide-oxide-silicon (SOHOS) flash memory was investigated. Compared to the conventional silicon-oxide-nitride-oxide-silicon (SONOS) flash memory, the SOHOS shows the slow operational speed and exhibits the poorer retention characteristics. These are attributed to the thin physical thickness below 4 nm and the crystallization of the HfO2 to contribute the lateral migration of the trapped charge in the trapping layer during high temperature annealing process.
ER -