The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Nous proposons un transistor à effet de champ tunnel à grille complète (GAA TFET) ayant une couche dopée n à la jonction source et étudions ses caractéristiques électriques avec une simulation de dispositif. En introduisant la couche dopée n, la zone de tunneling bande à bande est augmentée et la largeur de la barrière tunnel est diminuée. De plus, le champ électrique induit par la polarisation de grille est augmenté par la structure de grille environnante, ce qui permet d'obtenir une courbure de bande plus abrupte. Ces effets entraînent une amélioration significative des caractéristiques de courant et sous-seuil. Le GAA TFET avec une couche dopée n montre une oscillation inférieure au seuil à Id = 1 nA/µm de 32.5 mV/déc, oscillation moyenne sous le seuil de 20.6 mV/déc. Par comparaison avec d'autres structures TFET, les mérites du dispositif proposé sont démontrés et les dépendances des performances sur les paramètres du dispositif sont caractérisées par des simulations approfondies.
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Dong Seup LEE, Hong-Seon YANG, Kwon-Chil KANG, Joung-Eob LEE, Jung Han LEE, Seongjae CHO, Byung-Gook PARK, "Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 5, pp. 540-545, May 2010, doi: 10.1587/transele.E93.C.540.
Abstract: We propose a gate-all-around tunnel field effect transistor (GAA TFET) having a n-doped layer at the source junction and investigate its electrical characteristics with device simulation. By introducing the n-doped layer, band-to-band tunneling area is increased and tunneling barrier width is decreased. Also, electric field induced by gate bias is increased by the surrounding gate structure, which makes it possible to obtain a more abrupt band-bending. These effects bring about a significant improvement in on-current and subthreshold characteristics. GAA TFET with n-doped layer shows subthreshold swing at Id = 1 nA/µm of 32.5 mV/dec, average subthreshold swing of 20.6 mV/dec. With comparison to other TFET structures, the merits of the proposed device are demonstrated and performance dependences on device parameters are characterized by extensive simulations.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.540/_p
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@ARTICLE{e93-c_5_540,
author={Dong Seup LEE, Hong-Seon YANG, Kwon-Chil KANG, Joung-Eob LEE, Jung Han LEE, Seongjae CHO, Byung-Gook PARK, },
journal={IEICE TRANSACTIONS on Electronics},
title={Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer},
year={2010},
volume={E93-C},
number={5},
pages={540-545},
abstract={We propose a gate-all-around tunnel field effect transistor (GAA TFET) having a n-doped layer at the source junction and investigate its electrical characteristics with device simulation. By introducing the n-doped layer, band-to-band tunneling area is increased and tunneling barrier width is decreased. Also, electric field induced by gate bias is increased by the surrounding gate structure, which makes it possible to obtain a more abrupt band-bending. These effects bring about a significant improvement in on-current and subthreshold characteristics. GAA TFET with n-doped layer shows subthreshold swing at Id = 1 nA/µm of 32.5 mV/dec, average subthreshold swing of 20.6 mV/dec. With comparison to other TFET structures, the merits of the proposed device are demonstrated and performance dependences on device parameters are characterized by extensive simulations.},
keywords={},
doi={10.1587/transele.E93.C.540},
ISSN={1745-1353},
month={May},}
Copier
TY - JOUR
TI - Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer
T2 - IEICE TRANSACTIONS on Electronics
SP - 540
EP - 545
AU - Dong Seup LEE
AU - Hong-Seon YANG
AU - Kwon-Chil KANG
AU - Joung-Eob LEE
AU - Jung Han LEE
AU - Seongjae CHO
AU - Byung-Gook PARK
PY - 2010
DO - 10.1587/transele.E93.C.540
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2010
AB - We propose a gate-all-around tunnel field effect transistor (GAA TFET) having a n-doped layer at the source junction and investigate its electrical characteristics with device simulation. By introducing the n-doped layer, band-to-band tunneling area is increased and tunneling barrier width is decreased. Also, electric field induced by gate bias is increased by the surrounding gate structure, which makes it possible to obtain a more abrupt band-bending. These effects bring about a significant improvement in on-current and subthreshold characteristics. GAA TFET with n-doped layer shows subthreshold swing at Id = 1 nA/µm of 32.5 mV/dec, average subthreshold swing of 20.6 mV/dec. With comparison to other TFET structures, the merits of the proposed device are demonstrated and performance dependences on device parameters are characterized by extensive simulations.
ER -