The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
L'analyse opto-thermique du recuit de semi-conducteurs à diodes multi-laser bleues (BLDA) pour un film de Si amorphe (a-Si) est réalisée en faisant varier la puissance d'irradiation, la vitesse de balayage et la forme du faisceau du laser bleu de 445 nm. Les profils thermiques, la température maximale du film a-Si et la durée de fusion sont évalués. En comparant les résultats simulés avec les résultats expérimentaux, l'excellente contrôlabilité du BLDA pour une taille de grain arbitraire peut être expliquée de manière cohérente par la relation entre le temps d'irradiation et la durée de fusion. Les résultats sont utiles pour estimer la phase polycristallisée telle que le Si micro-polycristallin, le Si polycristallin et la croissance latérale anisotrope du Si de type monocristallin.
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Katsuya SHIRAI, Takashi NOGUCHI, Yoshiaki OGINO, Eiji SAHOTA, "Opto-Thermal Analysis of Blue Multi Laser Diode Annealing (BLDA)" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 10, pp. 1499-1503, October 2010, doi: 10.1587/transele.E93.C.1499.
Abstract: Opto-Thermal analysis of Semiconductor Blue-Multi-Laser-Diode Annealing (BLDA) for amorphous Si (a-Si) film is conducted by varying the irradiation power, the scanning velocity and the beam shape of blue-laser of 445 nm. Thermal profiles, maximum temperature of the a-Si film and the melting duration are evaluated. By comparing the simulated results with the experimental results, the excellent controllability of BLDA for arbitrary grain size can be explained consistently by the relation between irradiation time and melting duration. The results are useful to estimate poly-crystallized phase such as micro-polycrystalline Si, polycrystalline Si and anisotropic lateral growth of single-crystal-like Si.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.1499/_p
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@ARTICLE{e93-c_10_1499,
author={Katsuya SHIRAI, Takashi NOGUCHI, Yoshiaki OGINO, Eiji SAHOTA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Opto-Thermal Analysis of Blue Multi Laser Diode Annealing (BLDA)},
year={2010},
volume={E93-C},
number={10},
pages={1499-1503},
abstract={Opto-Thermal analysis of Semiconductor Blue-Multi-Laser-Diode Annealing (BLDA) for amorphous Si (a-Si) film is conducted by varying the irradiation power, the scanning velocity and the beam shape of blue-laser of 445 nm. Thermal profiles, maximum temperature of the a-Si film and the melting duration are evaluated. By comparing the simulated results with the experimental results, the excellent controllability of BLDA for arbitrary grain size can be explained consistently by the relation between irradiation time and melting duration. The results are useful to estimate poly-crystallized phase such as micro-polycrystalline Si, polycrystalline Si and anisotropic lateral growth of single-crystal-like Si.},
keywords={},
doi={10.1587/transele.E93.C.1499},
ISSN={1745-1353},
month={October},}
Copier
TY - JOUR
TI - Opto-Thermal Analysis of Blue Multi Laser Diode Annealing (BLDA)
T2 - IEICE TRANSACTIONS on Electronics
SP - 1499
EP - 1503
AU - Katsuya SHIRAI
AU - Takashi NOGUCHI
AU - Yoshiaki OGINO
AU - Eiji SAHOTA
PY - 2010
DO - 10.1587/transele.E93.C.1499
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2010
AB - Opto-Thermal analysis of Semiconductor Blue-Multi-Laser-Diode Annealing (BLDA) for amorphous Si (a-Si) film is conducted by varying the irradiation power, the scanning velocity and the beam shape of blue-laser of 445 nm. Thermal profiles, maximum temperature of the a-Si film and the melting duration are evaluated. By comparing the simulated results with the experimental results, the excellent controllability of BLDA for arbitrary grain size can be explained consistently by the relation between irradiation time and melting duration. The results are useful to estimate poly-crystallized phase such as micro-polycrystalline Si, polycrystalline Si and anisotropic lateral growth of single-crystal-like Si.
ER -