The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Les effets de la contrainte dans les films de passivation sur les propriétés électriques des (0001) HEMT AlGaN/GaN sont analysés numériquement dans le cadre du modèle de force de bord avec des caractéristiques anisotropes dans les propriétés élastiques des nitrures du groupe III explicitement prises en compte. Les contraintes de compression pratiques dans les films de passivation induisent des charges piézoélectriques négatives sous les grilles et produisent des tensions de seuil inférieures de quelques volts. De plus, le décalage de la tension de seuil dû à la contrainte de compression est proportionnel à LG- 1.1
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Naoteru SHIGEKAWA, Suehiro SUGITANI, "Analysis of Passivation-Film-Induced Stress Effects on Electrical Properties in AlGaN/GaN HEMTs" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 8, pp. 1212-1217, August 2010, doi: 10.1587/transele.E93.C.1212.
Abstract: Effects of stress in passivation films on the electrical properties of (0001) AlGaN/GaN HEMTs are numerically analysed in the framework of the edge force model with anisotropical characteristics in elastic properties of group-III nitrides explicitly considered. Practical compressive stresses in passivation films induce negative piezoelectric charges below the gates and bring forth a-few-volt shallower threshold voltages. In addition, the shift in the threshold voltage due to the compressive stress is proportional to LG-1.1
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.1212/_p
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@ARTICLE{e93-c_8_1212,
author={Naoteru SHIGEKAWA, Suehiro SUGITANI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Analysis of Passivation-Film-Induced Stress Effects on Electrical Properties in AlGaN/GaN HEMTs},
year={2010},
volume={E93-C},
number={8},
pages={1212-1217},
abstract={Effects of stress in passivation films on the electrical properties of (0001) AlGaN/GaN HEMTs are numerically analysed in the framework of the edge force model with anisotropical characteristics in elastic properties of group-III nitrides explicitly considered. Practical compressive stresses in passivation films induce negative piezoelectric charges below the gates and bring forth a-few-volt shallower threshold voltages. In addition, the shift in the threshold voltage due to the compressive stress is proportional to LG-1.1
keywords={},
doi={10.1587/transele.E93.C.1212},
ISSN={1745-1353},
month={August},}
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TY - JOUR
TI - Analysis of Passivation-Film-Induced Stress Effects on Electrical Properties in AlGaN/GaN HEMTs
T2 - IEICE TRANSACTIONS on Electronics
SP - 1212
EP - 1217
AU - Naoteru SHIGEKAWA
AU - Suehiro SUGITANI
PY - 2010
DO - 10.1587/transele.E93.C.1212
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2010
AB - Effects of stress in passivation films on the electrical properties of (0001) AlGaN/GaN HEMTs are numerically analysed in the framework of the edge force model with anisotropical characteristics in elastic properties of group-III nitrides explicitly considered. Practical compressive stresses in passivation films induce negative piezoelectric charges below the gates and bring forth a-few-volt shallower threshold voltages. In addition, the shift in the threshold voltage due to the compressive stress is proportional to LG-1.1
ER -