The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Cet article propose un concept de configuration concurrente de dispositifs micro-usinés à radiofréquence (RF) et de systèmes micro-électro-mécaniques (MEMS). Les dispositifs sont fabriqués sur une structure diélectrique-air-métal (DAM) développée à l'origine qui convient à la fabrication de divers dispositifs ensemble. La structure DAM peut proposer des éléments creux supportés par une membrane intégrés dans une plaquette de silicium en y créant des cavités. Même si les appareils ont des profondeurs de cavité différentes, ils sont traités par une seule planarisation. De plus, étant donné que la structure est travaillée uniquement à partir du côté avant de la tranche, aucun processus de retournement ni aucun processus de liaison de tranche n'est requis, ce qui permet d'obtenir une intégration simultanée à faible coût. En tant qu'applications des structures DAM, un guide d'ondes coplanaire creux mis à la terre, des circuits à éléments localisés et un commutateur MEMS sont démontrés.
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Tamotsu NISHINO, Masatake HANGAI, Yukihisa YOSHIDA, Sang-Seok LEE, "Micromachined RF Devices for Concurrent Integration on Dielectric-Air-Metal Structures" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 7, pp. 1111-1118, July 2010, doi: 10.1587/transele.E93.C.1111.
Abstract: This paper proposes a concept of a concurrent configuration of radio-frequency (RF) micromachined and micro-electro-mechanical-system (MEMS) devices. The devices are fabricated on an originally developed dielectric-air-metal (DAM) structure that suits for fabrication of various devices all together. The DAM structure can propose membrane-supported hollow elements embedded in a silicon wafer by creating cavities in it. Even though the devices have different cavity depths, they are processed by just one planarization. In addition, since the structure is worked only from the front side of the wafer, no flipping process as well as no wafer bonding process is required, and the fact realizes low-cost concurrent integration. As applications of the DAM structures, a hollow grounded co-planar waveguide, lumped element circuitries, and an MEMS switch are demonstrated.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.1111/_p
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@ARTICLE{e93-c_7_1111,
author={Tamotsu NISHINO, Masatake HANGAI, Yukihisa YOSHIDA, Sang-Seok LEE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Micromachined RF Devices for Concurrent Integration on Dielectric-Air-Metal Structures},
year={2010},
volume={E93-C},
number={7},
pages={1111-1118},
abstract={This paper proposes a concept of a concurrent configuration of radio-frequency (RF) micromachined and micro-electro-mechanical-system (MEMS) devices. The devices are fabricated on an originally developed dielectric-air-metal (DAM) structure that suits for fabrication of various devices all together. The DAM structure can propose membrane-supported hollow elements embedded in a silicon wafer by creating cavities in it. Even though the devices have different cavity depths, they are processed by just one planarization. In addition, since the structure is worked only from the front side of the wafer, no flipping process as well as no wafer bonding process is required, and the fact realizes low-cost concurrent integration. As applications of the DAM structures, a hollow grounded co-planar waveguide, lumped element circuitries, and an MEMS switch are demonstrated.},
keywords={},
doi={10.1587/transele.E93.C.1111},
ISSN={1745-1353},
month={July},}
Copier
TY - JOUR
TI - Micromachined RF Devices for Concurrent Integration on Dielectric-Air-Metal Structures
T2 - IEICE TRANSACTIONS on Electronics
SP - 1111
EP - 1118
AU - Tamotsu NISHINO
AU - Masatake HANGAI
AU - Yukihisa YOSHIDA
AU - Sang-Seok LEE
PY - 2010
DO - 10.1587/transele.E93.C.1111
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2010
AB - This paper proposes a concept of a concurrent configuration of radio-frequency (RF) micromachined and micro-electro-mechanical-system (MEMS) devices. The devices are fabricated on an originally developed dielectric-air-metal (DAM) structure that suits for fabrication of various devices all together. The DAM structure can propose membrane-supported hollow elements embedded in a silicon wafer by creating cavities in it. Even though the devices have different cavity depths, they are processed by just one planarization. In addition, since the structure is worked only from the front side of the wafer, no flipping process as well as no wafer bonding process is required, and the fact realizes low-cost concurrent integration. As applications of the DAM structures, a hollow grounded co-planar waveguide, lumped element circuitries, and an MEMS switch are demonstrated.
ER -