The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Nous avons développé une méthode de fabrication simple de transistors à effet de champ (FET) en Si avec des films de grille en poly (méthacrylate de méthyle) (PMMA) pour l'enseignement scientifique. Dans ce processus, nous pouvons facilement fabriquer les FET en silicium uniquement par dépôt de métal et diffusion thermique sans aucun processus de lithographie. Les films organiques d'isolation en PMMA peuvent être déposés par coulée ou peinture à température ambiante sous air. Les FET à semi-conducteur métallo-organique avec PMMA présentaient presque les mêmes caractéristiques de courant de drain et de tension de grille que celles des FET à semi-conducteur à oxyde métallique de Si conventionnels, qui conviennent au matériel pédagogique de l'ingénierie des semi-conducteurs. Les FET Si à grille organique peuvent être utilisés non seulement à des fins éducatives, mais également comme transistors à couches minces pour les écrans à matrice active.
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Fumihiko HIROSE, Tatsuro MIYAGI, Yuzuru NARITA, "Organic Gate Silicon Field Effect Transistors with Poly Methylmethacrylate Films for Science Education" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 1, pp. 108-111, January 2010, doi: 10.1587/transele.E93.C.108.
Abstract: We have developed an easy fabrication method of Si field effect transistors (FETs) with poly (methyl methacrylate) (PMMA) gate films for science education. In this process, we can easily fabricate the silicon FETs only by means of metal deposition and thermal diffusion without any lithography processes. The organic isolation films of PMMA can be deposited by casting or painting at room temperature in air. The metal-organic-semiconductor FETs with PMMA exhibited almost the same drain current -- gate voltage characteristics as those of conventional Si metal-oxide-semiconductor FETs, which are suitable for the education material of semiconductor engineering. The organic gate Si FETs can be used not only for education but also as thin film transistors for active matrix displays.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.108/_p
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@ARTICLE{e93-c_1_108,
author={Fumihiko HIROSE, Tatsuro MIYAGI, Yuzuru NARITA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Organic Gate Silicon Field Effect Transistors with Poly Methylmethacrylate Films for Science Education},
year={2010},
volume={E93-C},
number={1},
pages={108-111},
abstract={We have developed an easy fabrication method of Si field effect transistors (FETs) with poly (methyl methacrylate) (PMMA) gate films for science education. In this process, we can easily fabricate the silicon FETs only by means of metal deposition and thermal diffusion without any lithography processes. The organic isolation films of PMMA can be deposited by casting or painting at room temperature in air. The metal-organic-semiconductor FETs with PMMA exhibited almost the same drain current -- gate voltage characteristics as those of conventional Si metal-oxide-semiconductor FETs, which are suitable for the education material of semiconductor engineering. The organic gate Si FETs can be used not only for education but also as thin film transistors for active matrix displays.},
keywords={},
doi={10.1587/transele.E93.C.108},
ISSN={1745-1353},
month={January},}
Copier
TY - JOUR
TI - Organic Gate Silicon Field Effect Transistors with Poly Methylmethacrylate Films for Science Education
T2 - IEICE TRANSACTIONS on Electronics
SP - 108
EP - 111
AU - Fumihiko HIROSE
AU - Tatsuro MIYAGI
AU - Yuzuru NARITA
PY - 2010
DO - 10.1587/transele.E93.C.108
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 2010
AB - We have developed an easy fabrication method of Si field effect transistors (FETs) with poly (methyl methacrylate) (PMMA) gate films for science education. In this process, we can easily fabricate the silicon FETs only by means of metal deposition and thermal diffusion without any lithography processes. The organic isolation films of PMMA can be deposited by casting or painting at room temperature in air. The metal-organic-semiconductor FETs with PMMA exhibited almost the same drain current -- gate voltage characteristics as those of conventional Si metal-oxide-semiconductor FETs, which are suitable for the education material of semiconductor engineering. The organic gate Si FETs can be used not only for education but also as thin film transistors for active matrix displays.
ER -