The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Nous proposons une mémoire flash NAND en terrasses tridimensionnelle. Il a un canal vertical donc il est possible de faire un canal assez long en 3F2 taille. Et il a une structure tridimensionnelle dont le canal est relié verticalement à deux escaliers. Nous pouvons ainsi obtenir une haute densité comme dans la structure à matrice empilée, sans processus d'empilement de silicium. Nous pouvons créer de la mémoire flash NAND avec 3F2 taille des cellules. À l’aide de la simulation SILVACO ATLAS, nous étudions les caractéristiques de la mémoire flash NAND en terrasses telles que la programmation, l’effacement et la lecture. Aussi, sa méthode de fabrication est proposée.
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Yoon KIM, Seongjae CHO, Gil Sung LEE, Il Han PARK, Jong Duk LEE, Hyungcheol SHIN, Byung-Gook PARK, "3-Dimensional Terraced NAND (3D TNAND) Flash Memory-Stacked Version of Folded NAND Array" in IEICE TRANSACTIONS on Electronics,
vol. E92-C, no. 5, pp. 653-658, May 2009, doi: 10.1587/transele.E92.C.653.
Abstract: We propose a 3-dimensional terraced NAND flash memory. It has a vertical channel so it is possible to make a long enough channel in 1F2 size. And it has 3-dimensional structure whose channel is connected vertically along with two stairs. So we can obtain high density as in the stacked array structure, without silicon stacking process. We can make NAND flash memory with 3F2 cell size. Using SILVACO ATLAS simulation, we study terraced NAND flash memory characteristics such as program, erase, and read. Also, its fabrication method is proposed.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E92.C.653/_p
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@ARTICLE{e92-c_5_653,
author={Yoon KIM, Seongjae CHO, Gil Sung LEE, Il Han PARK, Jong Duk LEE, Hyungcheol SHIN, Byung-Gook PARK, },
journal={IEICE TRANSACTIONS on Electronics},
title={3-Dimensional Terraced NAND (3D TNAND) Flash Memory-Stacked Version of Folded NAND Array},
year={2009},
volume={E92-C},
number={5},
pages={653-658},
abstract={We propose a 3-dimensional terraced NAND flash memory. It has a vertical channel so it is possible to make a long enough channel in 1F2 size. And it has 3-dimensional structure whose channel is connected vertically along with two stairs. So we can obtain high density as in the stacked array structure, without silicon stacking process. We can make NAND flash memory with 3F2 cell size. Using SILVACO ATLAS simulation, we study terraced NAND flash memory characteristics such as program, erase, and read. Also, its fabrication method is proposed.},
keywords={},
doi={10.1587/transele.E92.C.653},
ISSN={1745-1353},
month={May},}
Copier
TY - JOUR
TI - 3-Dimensional Terraced NAND (3D TNAND) Flash Memory-Stacked Version of Folded NAND Array
T2 - IEICE TRANSACTIONS on Electronics
SP - 653
EP - 658
AU - Yoon KIM
AU - Seongjae CHO
AU - Gil Sung LEE
AU - Il Han PARK
AU - Jong Duk LEE
AU - Hyungcheol SHIN
AU - Byung-Gook PARK
PY - 2009
DO - 10.1587/transele.E92.C.653
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E92-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2009
AB - We propose a 3-dimensional terraced NAND flash memory. It has a vertical channel so it is possible to make a long enough channel in 1F2 size. And it has 3-dimensional structure whose channel is connected vertically along with two stairs. So we can obtain high density as in the stacked array structure, without silicon stacking process. We can make NAND flash memory with 3F2 cell size. Using SILVACO ATLAS simulation, we study terraced NAND flash memory characteristics such as program, erase, and read. Also, its fabrication method is proposed.
ER -