The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
L'article présente un nouveau circuit à résistance différentielle négative (NDR) à deux pics combinant un transistor à effet de champ (MOS) à base de métal-oxyde-semi-conducteur à base de Si et un transistor bipolaire à hétérojonction (HBT) à base de SiGe. Par rapport à la diode à effet tunnel résonant, le MOS-HBT-NDR présente deux avantages majeurs dans la conception de notre circuit. La première est que la fabrication de cette application basée sur MOS-HBT-NDR peut être entièrement mise en œuvre par le processus BiCMOS standard. Une autre raison est que le courant de crête peut être ajusté efficacement par la tension contrôlée. Le rapport de courant crête à vallée est respectivement d'environ 4136 9.4 et XNUMX au premier et au deuxième pic. Il est très utile pour les concepteurs de circuits de prendre en compte les applications basées sur le NDR.
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Dong-Shong LIANG, Kwang-Jow GAN, Cheng-Chi TAI, Cher-Shiung TSAI, "Standard BiCMOS Implementation of a Two-Peak Negative Differential Resistance Circuit with High and Adjustable Peak-to-Valley Current Ratio" in IEICE TRANSACTIONS on Electronics,
vol. E92-C, no. 5, pp. 635-638, May 2009, doi: 10.1587/transele.E92.C.635.
Abstract: The paper demonstrates a novel two-peak negative differential resistance (NDR) circuit combining Si-based metal-oxide-semiconductor field-effect-transistor (MOS) and SiGe-based heterojunction bipolar transistor (HBT). Compared to the resonant-tunneling diode, MOS-HBT-NDR has two major advantages in our circuit design. One is that the fabrication of this MOS-HBT-NDR-based application can be fully implemented by the standard BiCMOS process. Another is that the peak current can be effectively adjusted by the controlled voltage. The peak-to-valley current ratio is about 4136 and 9.4 at the first and second peak respectively. It is very useful for circuit designers to consider the NDR-based applications.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E92.C.635/_p
Copier
@ARTICLE{e92-c_5_635,
author={Dong-Shong LIANG, Kwang-Jow GAN, Cheng-Chi TAI, Cher-Shiung TSAI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Standard BiCMOS Implementation of a Two-Peak Negative Differential Resistance Circuit with High and Adjustable Peak-to-Valley Current Ratio},
year={2009},
volume={E92-C},
number={5},
pages={635-638},
abstract={The paper demonstrates a novel two-peak negative differential resistance (NDR) circuit combining Si-based metal-oxide-semiconductor field-effect-transistor (MOS) and SiGe-based heterojunction bipolar transistor (HBT). Compared to the resonant-tunneling diode, MOS-HBT-NDR has two major advantages in our circuit design. One is that the fabrication of this MOS-HBT-NDR-based application can be fully implemented by the standard BiCMOS process. Another is that the peak current can be effectively adjusted by the controlled voltage. The peak-to-valley current ratio is about 4136 and 9.4 at the first and second peak respectively. It is very useful for circuit designers to consider the NDR-based applications.},
keywords={},
doi={10.1587/transele.E92.C.635},
ISSN={1745-1353},
month={May},}
Copier
TY - JOUR
TI - Standard BiCMOS Implementation of a Two-Peak Negative Differential Resistance Circuit with High and Adjustable Peak-to-Valley Current Ratio
T2 - IEICE TRANSACTIONS on Electronics
SP - 635
EP - 638
AU - Dong-Shong LIANG
AU - Kwang-Jow GAN
AU - Cheng-Chi TAI
AU - Cher-Shiung TSAI
PY - 2009
DO - 10.1587/transele.E92.C.635
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E92-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2009
AB - The paper demonstrates a novel two-peak negative differential resistance (NDR) circuit combining Si-based metal-oxide-semiconductor field-effect-transistor (MOS) and SiGe-based heterojunction bipolar transistor (HBT). Compared to the resonant-tunneling diode, MOS-HBT-NDR has two major advantages in our circuit design. One is that the fabrication of this MOS-HBT-NDR-based application can be fully implemented by the standard BiCMOS process. Another is that the peak current can be effectively adjusted by the controlled voltage. The peak-to-valley current ratio is about 4136 and 9.4 at the first and second peak respectively. It is very useful for circuit designers to consider the NDR-based applications.
ER -