The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Nous avons étudié la formation de nanodots Pd sur SiO2 à partir de films ultrafins de Pd exposés à un plasma d'hydrogène distant à température ambiante, dans lesquels des paramètres tels que la pression du gaz et la puissance d'entrée permettent de générer du H2 le plasma et l'épaisseur du film de Pd ont été sélectionnés pour obtenir des informations sur la migration de surface des atomes de Pd induite par l'irradiation atomique par l'hydrogène et l'agglomération résultante avec action cohésive. La densité surfacique des points a été contrôlée dans la plage allant de
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Kazuhiro SHIMANOE, Katsunori MAKIHARA, Mitsuhisa IKEDA, Seiichi MIYAZAKI, "Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories" in IEICE TRANSACTIONS on Electronics,
vol. E92-C, no. 5, pp. 616-619, May 2009, doi: 10.1587/transele.E92.C.616.
Abstract: We have studied the formation of Pd-nanodots on SiO2 from ultrathin Pd films being exposed to remote hydrogen plasma at room temperature, in which parameters such as the gas pressure and input power to generate H2 plasma and the Pd film thickness were selected to get some insights into surface migration of Pd atoms induced with atomic hydrogen irradiation and resultant agglomeration with cohesive action. The areal dot density was controlled in the range from
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E92.C.616/_p
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@ARTICLE{e92-c_5_616,
author={Kazuhiro SHIMANOE, Katsunori MAKIHARA, Mitsuhisa IKEDA, Seiichi MIYAZAKI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories},
year={2009},
volume={E92-C},
number={5},
pages={616-619},
abstract={We have studied the formation of Pd-nanodots on SiO2 from ultrathin Pd films being exposed to remote hydrogen plasma at room temperature, in which parameters such as the gas pressure and input power to generate H2 plasma and the Pd film thickness were selected to get some insights into surface migration of Pd atoms induced with atomic hydrogen irradiation and resultant agglomeration with cohesive action. The areal dot density was controlled in the range from
keywords={},
doi={10.1587/transele.E92.C.616},
ISSN={1745-1353},
month={May},}
Copier
TY - JOUR
TI - Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories
T2 - IEICE TRANSACTIONS on Electronics
SP - 616
EP - 619
AU - Kazuhiro SHIMANOE
AU - Katsunori MAKIHARA
AU - Mitsuhisa IKEDA
AU - Seiichi MIYAZAKI
PY - 2009
DO - 10.1587/transele.E92.C.616
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E92-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2009
AB - We have studied the formation of Pd-nanodots on SiO2 from ultrathin Pd films being exposed to remote hydrogen plasma at room temperature, in which parameters such as the gas pressure and input power to generate H2 plasma and the Pd film thickness were selected to get some insights into surface migration of Pd atoms induced with atomic hydrogen irradiation and resultant agglomeration with cohesive action. The areal dot density was controlled in the range from
ER -