The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Nous proposons une nouvelle construction de filtre d'arrêt sélectif de bande pour diminuer le bruit de distorsion d'intermodulation hors bande (IMD) généré dans l'amplificateur de puissance d'émission. La suppression du bruit IMD améliore directement le rapport de puissance de fuite du canal adjacent (ACLR). Un dispositif supraconducteur à haute température (HTS) doté de performances Q extrêmement élevées et d'un très petit modèle de circuit intégré hybride permettrait de mettre en œuvre la construction de filtre proposée en tant que dispositif pratique. Pour confirmer l'efficacité du filtre de type réaction HTS (HTS-RTF) dans l'amélioration de l'ACLR, des investigations basées à la fois sur des expériences et des analyses numériques sont menées. La structure d'un résonateur à anneau ouvert divisé à 5 GHz est étudiée ; ses cibles incluent un facteur Q de décharge élevé, de faibles densités de courant et un faible rayonnement. Un HTS-RTF 5 GHz conçu avec une bande passante de suppression de 4 MHz et plus de 40 dB MHz-1 une jupe pointue est fabriquée et étudiée expérimentalement. Les valeurs ACLR mesurées sont améliorées d'un maximum de 12.8 dB et restent constantes jusqu'à la puissance du signal passe-bande de 40 dBm. De plus, pour examiner l'amélioration de l'efficacité énergétique offerte par la suppression du bruit du HTS-RTF, des analyses numériques basées sur les résultats mesurés des caractéristiques de l'amplificateur de puissance HEMT en nitrure de gallium sont effectuées. Les résultats analysés montrent que l'efficacité du drain de l'amplificateur peut être améliorée à 44.2% de l'amplificateur avec filtre contre 15.7% de l'amplificateur sans filtre.
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Shunichi FUTATSUMORI, Takashi HIKAGE, Toshio NOJIMA, Akihiko AKASEGAWA, Teru NAKANISHI, Kazunori YAMANAKA, "A Novel Filter Construction Utilizing HTS Reaction-Type Filter to Improve Adjacent Channel Leakage Power Ratio of Mobile Communication Systems" in IEICE TRANSACTIONS on Electronics,
vol. E92-C, no. 3, pp. 307-314, March 2009, doi: 10.1587/transele.E92.C.307.
Abstract: We propose a new band selective stop filter construction to decrease the out of band intermodulation distortion (IMD) noise generated in the transmitting power amplifier. Suppression of IMD noise directly improves the adjacent channel leakage power ratio (ACLR). A high-temperature superconducting (HTS) device with extremely high-Q performance with very small hybrid IC pattern would make it possible to implement the proposed filter construction as a practical device. To confirm the effectiveness of the HTS reaction-type filter (HTS-RTF) in improving ACLR, investigations based on both experiments and numerical analyses are carried out. The structure of a 5-GHz split open-ring resonator is investigated; its targets include high-unload Q-factor, low current densities, and low radiation. A designed 5-GHz HTS-RTF with 4 MHz suppression bandwidth and more than 40 dB MHz-1 sharp skirt is fabricated and experimentally investigated. The measured ACLR values are improved by a maximum of 12.8 dB and are constant up to the passband signal power of 40 dBm. In addition, to examine the power efficiency improvement offered by noise suppression of the HTS-RTF, numerical analyses based on measured results of gallium nitride HEMT power amplifier characteristics are conducted. The analyzed results shows the drain efficiency of the amplifier can be improved to 44.2% of the amplifier with the filter from the 15.7% of the without filter.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E92.C.307/_p
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@ARTICLE{e92-c_3_307,
author={Shunichi FUTATSUMORI, Takashi HIKAGE, Toshio NOJIMA, Akihiko AKASEGAWA, Teru NAKANISHI, Kazunori YAMANAKA, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Novel Filter Construction Utilizing HTS Reaction-Type Filter to Improve Adjacent Channel Leakage Power Ratio of Mobile Communication Systems},
year={2009},
volume={E92-C},
number={3},
pages={307-314},
abstract={We propose a new band selective stop filter construction to decrease the out of band intermodulation distortion (IMD) noise generated in the transmitting power amplifier. Suppression of IMD noise directly improves the adjacent channel leakage power ratio (ACLR). A high-temperature superconducting (HTS) device with extremely high-Q performance with very small hybrid IC pattern would make it possible to implement the proposed filter construction as a practical device. To confirm the effectiveness of the HTS reaction-type filter (HTS-RTF) in improving ACLR, investigations based on both experiments and numerical analyses are carried out. The structure of a 5-GHz split open-ring resonator is investigated; its targets include high-unload Q-factor, low current densities, and low radiation. A designed 5-GHz HTS-RTF with 4 MHz suppression bandwidth and more than 40 dB MHz-1 sharp skirt is fabricated and experimentally investigated. The measured ACLR values are improved by a maximum of 12.8 dB and are constant up to the passband signal power of 40 dBm. In addition, to examine the power efficiency improvement offered by noise suppression of the HTS-RTF, numerical analyses based on measured results of gallium nitride HEMT power amplifier characteristics are conducted. The analyzed results shows the drain efficiency of the amplifier can be improved to 44.2% of the amplifier with the filter from the 15.7% of the without filter.},
keywords={},
doi={10.1587/transele.E92.C.307},
ISSN={1745-1353},
month={March},}
Copier
TY - JOUR
TI - A Novel Filter Construction Utilizing HTS Reaction-Type Filter to Improve Adjacent Channel Leakage Power Ratio of Mobile Communication Systems
T2 - IEICE TRANSACTIONS on Electronics
SP - 307
EP - 314
AU - Shunichi FUTATSUMORI
AU - Takashi HIKAGE
AU - Toshio NOJIMA
AU - Akihiko AKASEGAWA
AU - Teru NAKANISHI
AU - Kazunori YAMANAKA
PY - 2009
DO - 10.1587/transele.E92.C.307
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E92-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 2009
AB - We propose a new band selective stop filter construction to decrease the out of band intermodulation distortion (IMD) noise generated in the transmitting power amplifier. Suppression of IMD noise directly improves the adjacent channel leakage power ratio (ACLR). A high-temperature superconducting (HTS) device with extremely high-Q performance with very small hybrid IC pattern would make it possible to implement the proposed filter construction as a practical device. To confirm the effectiveness of the HTS reaction-type filter (HTS-RTF) in improving ACLR, investigations based on both experiments and numerical analyses are carried out. The structure of a 5-GHz split open-ring resonator is investigated; its targets include high-unload Q-factor, low current densities, and low radiation. A designed 5-GHz HTS-RTF with 4 MHz suppression bandwidth and more than 40 dB MHz-1 sharp skirt is fabricated and experimentally investigated. The measured ACLR values are improved by a maximum of 12.8 dB and are constant up to the passband signal power of 40 dBm. In addition, to examine the power efficiency improvement offered by noise suppression of the HTS-RTF, numerical analyses based on measured results of gallium nitride HEMT power amplifier characteristics are conducted. The analyzed results shows the drain efficiency of the amplifier can be improved to 44.2% of the amplifier with the filter from the 15.7% of the without filter.
ER -