The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Un processus de refusion AuSn utilisant des radicaux hydrogène comme moyen d'éviter le nettoyage des résidus de flux a été étudié pour son application au soudure par projection. Des particules d'AuSn (fabriquées par un atomiseur de gaz) inférieures à 5 µm, difficiles à refusionner par les méthodes conventionnelles utilisant un flux de colophane légèrement activée (RMA), ont été utilisées pour les expériences. Dans ce processus, l'effet de réduction par les radicaux hydrogène élimine les oxydes de surface des particules d'AuSn. Un excellent mouillage entre les particules AuSn de 1 µm de diamètre et la métallisation du Ni s'est produit dans le plasma d'hydrogène. En utilisant des radicaux hydrogène, des bosses AuSn de 100 µm de diamètre sans vides ont été formées avec succès à une température maximale de 300 °C.
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Eiji HIGURASHI, Daisuke CHINO, Tadatomo SUGA, "Residue-Free Solder Bumping Using Small AuSn Particles by Hydrogen Radicals" in IEICE TRANSACTIONS on Electronics,
vol. E92-C, no. 2, pp. 247-251, February 2009, doi: 10.1587/transele.E92.C.247.
Abstract: An AuSn reflow process using hydrogen radicals as a way to avert the cleaning of flux residues was investigated for its application to solder bumping. AuSn particles (manufactured by a gas atomizer) smaller than 5 µm, which are difficult to reflow by conventional methods that use rosin mildly activated (RMA) flux, were used for the experiments. In this process, the reduction effect by the hydrogen radicals removes the surface oxides of the AuSn particles. Excellent wetting between 1-µm-diameter AuSn particles and Ni metallization occurred in hydrogen plasma. Using hydrogen radicals, 100 µm-diameter AuSn bumps without voids were successfully formed at a peak temperature of 300
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E92.C.247/_p
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@ARTICLE{e92-c_2_247,
author={Eiji HIGURASHI, Daisuke CHINO, Tadatomo SUGA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Residue-Free Solder Bumping Using Small AuSn Particles by Hydrogen Radicals},
year={2009},
volume={E92-C},
number={2},
pages={247-251},
abstract={An AuSn reflow process using hydrogen radicals as a way to avert the cleaning of flux residues was investigated for its application to solder bumping. AuSn particles (manufactured by a gas atomizer) smaller than 5 µm, which are difficult to reflow by conventional methods that use rosin mildly activated (RMA) flux, were used for the experiments. In this process, the reduction effect by the hydrogen radicals removes the surface oxides of the AuSn particles. Excellent wetting between 1-µm-diameter AuSn particles and Ni metallization occurred in hydrogen plasma. Using hydrogen radicals, 100 µm-diameter AuSn bumps without voids were successfully formed at a peak temperature of 300
keywords={},
doi={10.1587/transele.E92.C.247},
ISSN={1745-1353},
month={February},}
Copier
TY - JOUR
TI - Residue-Free Solder Bumping Using Small AuSn Particles by Hydrogen Radicals
T2 - IEICE TRANSACTIONS on Electronics
SP - 247
EP - 251
AU - Eiji HIGURASHI
AU - Daisuke CHINO
AU - Tadatomo SUGA
PY - 2009
DO - 10.1587/transele.E92.C.247
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E92-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 2009
AB - An AuSn reflow process using hydrogen radicals as a way to avert the cleaning of flux residues was investigated for its application to solder bumping. AuSn particles (manufactured by a gas atomizer) smaller than 5 µm, which are difficult to reflow by conventional methods that use rosin mildly activated (RMA) flux, were used for the experiments. In this process, the reduction effect by the hydrogen radicals removes the surface oxides of the AuSn particles. Excellent wetting between 1-µm-diameter AuSn particles and Ni metallization occurred in hydrogen plasma. Using hydrogen radicals, 100 µm-diameter AuSn bumps without voids were successfully formed at a peak temperature of 300
ER -