The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Les caractéristiques électriques des diodes à hétérojonction organiques/inorganiques P3HT/aluminium ont été étudiées grâce aux mesures VI et capacité-tension (CV). La mesure VI a montré un redressement du courant inhérent à la diode Schottky, suggérant leur disponibilité en tant que diodes de redressement dans les circuits flexibles organiques. L'analyse CV a indiqué le fait que la couche d'appauvrissement avait été générée dans le film P3HT dans des conditions de polarisation inversée. L'analyse de la tension à bande plate suggère que la charge interfaciale affecte le potentiel intégré des diodes. L'hétérojonction Al/P3HT peut être utilisée non seulement comme diodes de redressement, mais également comme jonctions de grille pour les transistors à effet de champ ou à induction statique de type jonction.
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Fumihiko HIROSE, Yasuo KIMURA, Michio NIWANO, "P3HT/Al Organic/Inorganic Heterojunction Diodes Investigated by I-V and C-V Measurements" in IEICE TRANSACTIONS on Electronics,
vol. E92-C, no. 12, pp. 1475-1478, December 2009, doi: 10.1587/transele.E92.C.1475.
Abstract: Electrical characteristics of P3HT/Aluminum organic/ inorganic heterojunction diodes were investigated V-I and capacitance-voltage (C-V) measurements. The V-I measurement exhibited current rectification inherent in the Schottky diode, suggesting their availabilities as rectification diodes in organic flexible circuits. C-V analysis indicated the fact that the depletion layer was generated in the P3HT film in the reversed bias condition. The flat band voltage analysis suggested that the interfacial charge affected the built-in potential of the diodes. Al/P3HT heterojunction is possible to be used as not only the rectification diodes but also gate junctions for junction type field effect or static induction transistors.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E92.C.1475/_p
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@ARTICLE{e92-c_12_1475,
author={Fumihiko HIROSE, Yasuo KIMURA, Michio NIWANO, },
journal={IEICE TRANSACTIONS on Electronics},
title={P3HT/Al Organic/Inorganic Heterojunction Diodes Investigated by I-V and C-V Measurements},
year={2009},
volume={E92-C},
number={12},
pages={1475-1478},
abstract={Electrical characteristics of P3HT/Aluminum organic/ inorganic heterojunction diodes were investigated V-I and capacitance-voltage (C-V) measurements. The V-I measurement exhibited current rectification inherent in the Schottky diode, suggesting their availabilities as rectification diodes in organic flexible circuits. C-V analysis indicated the fact that the depletion layer was generated in the P3HT film in the reversed bias condition. The flat band voltage analysis suggested that the interfacial charge affected the built-in potential of the diodes. Al/P3HT heterojunction is possible to be used as not only the rectification diodes but also gate junctions for junction type field effect or static induction transistors.},
keywords={},
doi={10.1587/transele.E92.C.1475},
ISSN={1745-1353},
month={December},}
Copier
TY - JOUR
TI - P3HT/Al Organic/Inorganic Heterojunction Diodes Investigated by I-V and C-V Measurements
T2 - IEICE TRANSACTIONS on Electronics
SP - 1475
EP - 1478
AU - Fumihiko HIROSE
AU - Yasuo KIMURA
AU - Michio NIWANO
PY - 2009
DO - 10.1587/transele.E92.C.1475
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E92-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 2009
AB - Electrical characteristics of P3HT/Aluminum organic/ inorganic heterojunction diodes were investigated V-I and capacitance-voltage (C-V) measurements. The V-I measurement exhibited current rectification inherent in the Schottky diode, suggesting their availabilities as rectification diodes in organic flexible circuits. C-V analysis indicated the fact that the depletion layer was generated in the P3HT film in the reversed bias condition. The flat band voltage analysis suggested that the interfacial charge affected the built-in potential of the diodes. Al/P3HT heterojunction is possible to be used as not only the rectification diodes but also gate junctions for junction type field effect or static induction transistors.
ER -