The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Un amplificateur de puissance linéaire (PA) à large bande reconfigurable pour les applications WLAN longue portée fabriqué selon un processus CMOS RF 180 nm est présenté ici. Le réseau d'adaptation d'entrée/sortie reconfigurable proposé fournit au PA une capacité à large bande aux deux fréquences centrales de 0.5 GHz et 0.85 GHz. Le réseau d'adaptation de sortie est réalisé par un transformateur commutable qui affiche des efficacités passives maximales de 65.03 % et 73.45 % à 0.45 GHz et 0.725 GHz, respectivement. Avec les sources d'ondes continues, une bande passante de 1 dB (BW1 dB) selon la puissance de sortie saturée est de 0.4 à 1.2 GHz, où il affiche une puissance de sortie minimale avec un rendement de puissance ajoutée (PAE) de 25.62 dBm à 19.65 %. En utilisant une configuration de cellule de puissance adaptative au niveau du transistor à grille commune, la PA mesurée sous les signaux LTE 16-QAM 20 MHz (40 MHz) montre une puissance de sortie moyenne avec un PAE dépassant 20.22 (20.15) dBm avec 7.42 (7.35) % à un ACLR.E-UTRA de -30dBc, dans le BW1 dB.
Jaeyong KO
Samsung Electronics
Sangwook NAM
Seoul National University
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Copier
Jaeyong KO, Sangwook NAM, "A 0.4-1.2GHz Reconfigurable CMOS Power Amplifier for 802.11ah/af Applications" in IEICE TRANSACTIONS on Electronics,
vol. E102-C, no. 1, pp. 91-94, January 2019, doi: 10.1587/transele.E102.C.91.
Abstract: A reconfigurable broadband linear power amplifier (PA) for long-range WLAN applications fabricated in a 180nm RF CMOS process is presented here. The proposed reconfigurable in/output matching network provides the PA with broadband capability at the two center frequencies of 0.5GHz and 0.85GHz. The output matching network is realized by a switchable transformer which shows maximum peak passive efficiencies of 65.03% and 73.45% at 0.45GHz and 0.725GHz, respectively. With continuous wave sources, a 1-dB bandwidth (BW1-dB) according to saturated output power is 0.4-1.2GHz, where it shows a minimum output power with a power added efficiency (PAE) of 25.62dBm at 19.65%. Using an adaptive power cell configuration at the common gate transistor, the measured PA under LTE 16-QAM 20MHz (40MHz) signals shows an average output power with a PAE exceeding 20.22 (20.15) dBm with 7.42 (7.35)% at an ACLRE-UTRA of -30dBc, within the BW1-dB.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E102.C.91/_p
Copier
@ARTICLE{e102-c_1_91,
author={Jaeyong KO, Sangwook NAM, },
journal={IEICE TRANSACTIONS on Electronics},
title={A 0.4-1.2GHz Reconfigurable CMOS Power Amplifier for 802.11ah/af Applications},
year={2019},
volume={E102-C},
number={1},
pages={91-94},
abstract={A reconfigurable broadband linear power amplifier (PA) for long-range WLAN applications fabricated in a 180nm RF CMOS process is presented here. The proposed reconfigurable in/output matching network provides the PA with broadband capability at the two center frequencies of 0.5GHz and 0.85GHz. The output matching network is realized by a switchable transformer which shows maximum peak passive efficiencies of 65.03% and 73.45% at 0.45GHz and 0.725GHz, respectively. With continuous wave sources, a 1-dB bandwidth (BW1-dB) according to saturated output power is 0.4-1.2GHz, where it shows a minimum output power with a power added efficiency (PAE) of 25.62dBm at 19.65%. Using an adaptive power cell configuration at the common gate transistor, the measured PA under LTE 16-QAM 20MHz (40MHz) signals shows an average output power with a PAE exceeding 20.22 (20.15) dBm with 7.42 (7.35)% at an ACLRE-UTRA of -30dBc, within the BW1-dB.},
keywords={},
doi={10.1587/transele.E102.C.91},
ISSN={1745-1353},
month={January},}
Copier
TY - JOUR
TI - A 0.4-1.2GHz Reconfigurable CMOS Power Amplifier for 802.11ah/af Applications
T2 - IEICE TRANSACTIONS on Electronics
SP - 91
EP - 94
AU - Jaeyong KO
AU - Sangwook NAM
PY - 2019
DO - 10.1587/transele.E102.C.91
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E102-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 2019
AB - A reconfigurable broadband linear power amplifier (PA) for long-range WLAN applications fabricated in a 180nm RF CMOS process is presented here. The proposed reconfigurable in/output matching network provides the PA with broadband capability at the two center frequencies of 0.5GHz and 0.85GHz. The output matching network is realized by a switchable transformer which shows maximum peak passive efficiencies of 65.03% and 73.45% at 0.45GHz and 0.725GHz, respectively. With continuous wave sources, a 1-dB bandwidth (BW1-dB) according to saturated output power is 0.4-1.2GHz, where it shows a minimum output power with a power added efficiency (PAE) of 25.62dBm at 19.65%. Using an adaptive power cell configuration at the common gate transistor, the measured PA under LTE 16-QAM 20MHz (40MHz) signals shows an average output power with a PAE exceeding 20.22 (20.15) dBm with 7.42 (7.35)% at an ACLRE-UTRA of -30dBc, within the BW1-dB.
ER -