The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Cette lettre présente un amplificateur séquentiel à modulation de charge (LMSA) bi-bande. L'amplificateur proposé a transformé l'atténuateur terminé au niveau du port d'isolation du combineur à quatre ports de l'architecture traditionnelle d'amplificateur de puissance séquentiel (SPA) en un réseau de modulation de réactance (RMN) pour la modulation de charge. L'impédance peut être maintenue sous forme de résistance pure en concevant RMN, permettant ainsi d'obtenir un rendement élevé et une bonne partie de la puissance de sortie dans les multiples bandes. Comparé à l'amplificateur de puissance Doherty double bande doté d'un réseau de modulation de charge (LMN) double bande complexe, le LMSA proposé présente des avantages tels que le maintien d'une efficacité de réduction de puissance de sortie (OBO) élevée, une large bande passante et une construction simple. Un LMSA bi-bande de 10 watts est simulé et mesuré dans 1.7-1.9 GHz et 2.4-2.6 GHz avec des rendements saturés de 61.2 à 69.9 % et de 54.4 à 70.8 %, respectivement. L'efficacité OBO de 9 dB correspondante est respectivement de 46.5 à 57.1 % et de 46.4 à 54.4 %.
Minghui YOU
Hangzhou Dianzi University
Guohua LIU
Hangzhou Dianzi University
Zhiqun CHENG
Hangzhou Dianzi University
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Minghui YOU, Guohua LIU, Zhiqun CHENG, "Design of a Dual-Band Load-Modulated Sequential Amplifier with Extended Back-off" in IEICE TRANSACTIONS on Electronics,
vol. E106-C, no. 12, pp. 808-811, December 2023, doi: 10.1587/transele.2023ECS6002.
Abstract: This letter presents a dual-band load-modulated sequential amplifier (LMSA). The proposed amplifier changed the attenuator terminated at the isolation port of the four-port combiner of the traditional sequential power amplifier (SPA) architecture into a reactance modulation network (RMN) for load modulation. The impedance can be maintained pure resistance by designing RMN, thus realizing high efficiency and a good portion of the output power in the multiple bands. Compared to the dual-band Doherty power amplifier with a complex dual-band load modulation network (LMN), the proposed LMSA has advantages as maintaining high output power back-off (OBO) efficiency, wide bandwidth and simple construction. A 10-watt dual-band LMSA is simulated and measured in 1.7-1.9GHz and 2.4-2.6GHz with saturated efficiencies 61.2-69.9% and 54.4-70.8%, respectively. The corresponding 9dB OBO efficiency is 46.5-57.1% and 46.4-54.4%, respectively.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2023ECS6002/_p
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@ARTICLE{e106-c_12_808,
author={Minghui YOU, Guohua LIU, Zhiqun CHENG, },
journal={IEICE TRANSACTIONS on Electronics},
title={Design of a Dual-Band Load-Modulated Sequential Amplifier with Extended Back-off},
year={2023},
volume={E106-C},
number={12},
pages={808-811},
abstract={This letter presents a dual-band load-modulated sequential amplifier (LMSA). The proposed amplifier changed the attenuator terminated at the isolation port of the four-port combiner of the traditional sequential power amplifier (SPA) architecture into a reactance modulation network (RMN) for load modulation. The impedance can be maintained pure resistance by designing RMN, thus realizing high efficiency and a good portion of the output power in the multiple bands. Compared to the dual-band Doherty power amplifier with a complex dual-band load modulation network (LMN), the proposed LMSA has advantages as maintaining high output power back-off (OBO) efficiency, wide bandwidth and simple construction. A 10-watt dual-band LMSA is simulated and measured in 1.7-1.9GHz and 2.4-2.6GHz with saturated efficiencies 61.2-69.9% and 54.4-70.8%, respectively. The corresponding 9dB OBO efficiency is 46.5-57.1% and 46.4-54.4%, respectively.},
keywords={},
doi={10.1587/transele.2023ECS6002},
ISSN={1745-1353},
month={December},}
Copier
TY - JOUR
TI - Design of a Dual-Band Load-Modulated Sequential Amplifier with Extended Back-off
T2 - IEICE TRANSACTIONS on Electronics
SP - 808
EP - 811
AU - Minghui YOU
AU - Guohua LIU
AU - Zhiqun CHENG
PY - 2023
DO - 10.1587/transele.2023ECS6002
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E106-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 2023
AB - This letter presents a dual-band load-modulated sequential amplifier (LMSA). The proposed amplifier changed the attenuator terminated at the isolation port of the four-port combiner of the traditional sequential power amplifier (SPA) architecture into a reactance modulation network (RMN) for load modulation. The impedance can be maintained pure resistance by designing RMN, thus realizing high efficiency and a good portion of the output power in the multiple bands. Compared to the dual-band Doherty power amplifier with a complex dual-band load modulation network (LMN), the proposed LMSA has advantages as maintaining high output power back-off (OBO) efficiency, wide bandwidth and simple construction. A 10-watt dual-band LMSA is simulated and measured in 1.7-1.9GHz and 2.4-2.6GHz with saturated efficiencies 61.2-69.9% and 54.4-70.8%, respectively. The corresponding 9dB OBO efficiency is 46.5-57.1% and 46.4-54.4%, respectively.
ER -