The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Dans cette recherche, l'effet de Ar/N2-pression du gaz de pulvérisation plasma sur le LaBxNy la couche tunnel et la couche de bloc ont été étudiées pour une mémoire à grille flottante à base de pentacène avec une couche de passivation en rubrène amorphe (α-rubrène). L'influence de la couche de passivation de l'α-rubrène sur les caractéristiques de mémoire a été examinée. La diode MIMIS (métal/isolant/métal/isolant/semi-conducteur) à base de pentacène et le transistor à effet de champ organique (OFET) ont été fabriqués à l'aide de LaB dopé au N.6 couche métallique et LaBxNy isolant avec couche de passivation α-rubrène à une température de recuit de 200°C. Dans le cas de la diode MIMIS, la densité de courant de fuite et l'épaisseur d'oxyde équivalente (EOT) ont été réduites de 1.2 × 10-2 A/cm2 à 1.1 × 10-7 A/cm2 et 3.5 nm à 3.1 nm, respectivement, en diminuant la pression du gaz de pulvérisation de 0.47 Pa à 0.19 Pa. Dans le cas d'un OFET de type à grille flottante avec couche de passivation en α-rubrène, la plus grande fenêtre de mémoire de 0.68 V a été obtenue avec une mobilité à saturation de 2.2×10-2 cm2/(V·s) et oscillation sous-seuil de 199 mV/déc par rapport au dispositif sans couche de passivation α-rubrène.
Eun-Ki HONG
Tokyo Institute of Technology
Kyung Eun PARK
Tokyo Institute of Technology
Shun-ichiro OHMI
Tokyo Institute of Technology
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Eun-Ki HONG, Kyung Eun PARK, Shun-ichiro OHMI, "Sputtering Gas Pressure Dependence on the LaBxNy Insulator Formation for Pentacene-Based Back-Gate Type Floating-Gate Memory with an Amorphous Rubrene Passivation Layer" in IEICE TRANSACTIONS on Electronics,
vol. E105-C, no. 10, pp. 589-595, October 2022, doi: 10.1587/transele.2021FUP0005.
Abstract: In this research, the effect of Ar/N2-plasma sputtering gas pressure on the LaBxNy tunnel and block layer was investigated for pentacene-based floating-gate memory with an amorphous rubrene (α-rubrene) passivation layer. The influence of α-rubrene passivation layer for memory characteristic was examined. The pentacene-based metal/insulator/metal/insulator/semiconductor (MIMIS) diode and organic field-effect transistor (OFET) were fabricated utilizing N-doped LaB6 metal layer and LaBxNy insulator with α-rubrene passivation layer at annealing temperature of 200°C. In the case of MIMIS diode, the leakage current density and the equivalent oxide thickness (EOT) were decreased from 1.2×10-2 A/cm2 to 1.1×10-7 A/cm2 and 3.5 nm to 3.1 nm, respectively, by decreasing the sputtering gas pressure from 0.47 Pa to 0.19 Pa. In the case of floating-gate type OFET with α-rubrene passivation layer, the larger memory window of 0.68 V was obtained with saturation mobility of 2.2×10-2 cm2/(V·s) and subthreshold swing of 199 mV/dec compared to the device without α-rubrene passivation layer.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2021FUP0005/_p
Copier
@ARTICLE{e105-c_10_589,
author={Eun-Ki HONG, Kyung Eun PARK, Shun-ichiro OHMI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Sputtering Gas Pressure Dependence on the LaBxNy Insulator Formation for Pentacene-Based Back-Gate Type Floating-Gate Memory with an Amorphous Rubrene Passivation Layer},
year={2022},
volume={E105-C},
number={10},
pages={589-595},
abstract={In this research, the effect of Ar/N2-plasma sputtering gas pressure on the LaBxNy tunnel and block layer was investigated for pentacene-based floating-gate memory with an amorphous rubrene (α-rubrene) passivation layer. The influence of α-rubrene passivation layer for memory characteristic was examined. The pentacene-based metal/insulator/metal/insulator/semiconductor (MIMIS) diode and organic field-effect transistor (OFET) were fabricated utilizing N-doped LaB6 metal layer and LaBxNy insulator with α-rubrene passivation layer at annealing temperature of 200°C. In the case of MIMIS diode, the leakage current density and the equivalent oxide thickness (EOT) were decreased from 1.2×10-2 A/cm2 to 1.1×10-7 A/cm2 and 3.5 nm to 3.1 nm, respectively, by decreasing the sputtering gas pressure from 0.47 Pa to 0.19 Pa. In the case of floating-gate type OFET with α-rubrene passivation layer, the larger memory window of 0.68 V was obtained with saturation mobility of 2.2×10-2 cm2/(V·s) and subthreshold swing of 199 mV/dec compared to the device without α-rubrene passivation layer.},
keywords={},
doi={10.1587/transele.2021FUP0005},
ISSN={1745-1353},
month={October},}
Copier
TY - JOUR
TI - Sputtering Gas Pressure Dependence on the LaBxNy Insulator Formation for Pentacene-Based Back-Gate Type Floating-Gate Memory with an Amorphous Rubrene Passivation Layer
T2 - IEICE TRANSACTIONS on Electronics
SP - 589
EP - 595
AU - Eun-Ki HONG
AU - Kyung Eun PARK
AU - Shun-ichiro OHMI
PY - 2022
DO - 10.1587/transele.2021FUP0005
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E105-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2022
AB - In this research, the effect of Ar/N2-plasma sputtering gas pressure on the LaBxNy tunnel and block layer was investigated for pentacene-based floating-gate memory with an amorphous rubrene (α-rubrene) passivation layer. The influence of α-rubrene passivation layer for memory characteristic was examined. The pentacene-based metal/insulator/metal/insulator/semiconductor (MIMIS) diode and organic field-effect transistor (OFET) were fabricated utilizing N-doped LaB6 metal layer and LaBxNy insulator with α-rubrene passivation layer at annealing temperature of 200°C. In the case of MIMIS diode, the leakage current density and the equivalent oxide thickness (EOT) were decreased from 1.2×10-2 A/cm2 to 1.1×10-7 A/cm2 and 3.5 nm to 3.1 nm, respectively, by decreasing the sputtering gas pressure from 0.47 Pa to 0.19 Pa. In the case of floating-gate type OFET with α-rubrene passivation layer, the larger memory window of 0.68 V was obtained with saturation mobility of 2.2×10-2 cm2/(V·s) and subthreshold swing of 199 mV/dec compared to the device without α-rubrene passivation layer.
ER -