The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Dans cette recherche, nous avons étudié les transistors à effet de champ métal-ferroélectrique-semi-conducteur (MFSFET) avec du HfO non dopé de 5 nm d'épaisseur.2 isolant de grille en diminuant la puissance de pulvérisation pour le dépôt d'électrode de grille de Pt. Le courant de fuite a été effectivement réduit à 2.6×10-8A/cm2 à la tension de -1.5 V par la puissance de pulvérisation de 40 W pour le dépôt d'électrode de platine. De plus, la fenêtre de mémoire (MW) de 0.53 V et le temps de rétention de plus de 10 ans ont été réalisés.
Joong-Won SHIN
Tokyo Institute of Technology
Masakazu TANUMA
Tokyo Institute of Technology
Shun-ichiro OHMI
Tokyo Institute of Technology
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Copier
Joong-Won SHIN, Masakazu TANUMA, Shun-ichiro OHMI, "MFSFET with 5nm Thick Ferroelectric Nondoped HfO2 Gate Insulator Utilizing Low Power Sputtering for Pt Gate Electrode Deposition" in IEICE TRANSACTIONS on Electronics,
vol. E105-C, no. 10, pp. 578-583, October 2022, doi: 10.1587/transele.2021FUP0003.
Abstract: In this research, we investigated the metal-ferroelectric-semiconductor field-effect transistors (MFSFETs) with 5nm thick nondoped HfO2 gate insulator by decreasing the sputtering power for Pt gate electrode deposition. The leakage current was effectively reduced to 2.6×10-8A/cm2 at the voltage of -1.5V by the sputtering power of 40W for Pt electrode deposition. Furthermore, the memory window (MW) of 0.53V and retention time over 10 years were realized.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2021FUP0003/_p
Copier
@ARTICLE{e105-c_10_578,
author={Joong-Won SHIN, Masakazu TANUMA, Shun-ichiro OHMI, },
journal={IEICE TRANSACTIONS on Electronics},
title={MFSFET with 5nm Thick Ferroelectric Nondoped HfO2 Gate Insulator Utilizing Low Power Sputtering for Pt Gate Electrode Deposition},
year={2022},
volume={E105-C},
number={10},
pages={578-583},
abstract={In this research, we investigated the metal-ferroelectric-semiconductor field-effect transistors (MFSFETs) with 5nm thick nondoped HfO2 gate insulator by decreasing the sputtering power for Pt gate electrode deposition. The leakage current was effectively reduced to 2.6×10-8A/cm2 at the voltage of -1.5V by the sputtering power of 40W for Pt electrode deposition. Furthermore, the memory window (MW) of 0.53V and retention time over 10 years were realized.},
keywords={},
doi={10.1587/transele.2021FUP0003},
ISSN={1745-1353},
month={October},}
Copier
TY - JOUR
TI - MFSFET with 5nm Thick Ferroelectric Nondoped HfO2 Gate Insulator Utilizing Low Power Sputtering for Pt Gate Electrode Deposition
T2 - IEICE TRANSACTIONS on Electronics
SP - 578
EP - 583
AU - Joong-Won SHIN
AU - Masakazu TANUMA
AU - Shun-ichiro OHMI
PY - 2022
DO - 10.1587/transele.2021FUP0003
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E105-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2022
AB - In this research, we investigated the metal-ferroelectric-semiconductor field-effect transistors (MFSFETs) with 5nm thick nondoped HfO2 gate insulator by decreasing the sputtering power for Pt gate electrode deposition. The leakage current was effectively reduced to 2.6×10-8A/cm2 at the voltage of -1.5V by the sputtering power of 40W for Pt electrode deposition. Furthermore, the memory window (MW) of 0.53V and retention time over 10 years were realized.
ER -