The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Cette étude propose une nouvelle structure de circuit redresseur à shunt unique qui peut réduire les pertes du circuit et améliorer l'efficacité par rapport à la structure conventionnelle. La structure proposée peut fournir une adaptation d'impédance au système de mesure (ou à l'antenne de réception) sans utiliser de circuits d'adaptation classiques, tels que des stubs et des tapers. La structure proposée peut effectuer simultanément une rectification double alternance et une adaptation d'impédance en plaçant un point d'alimentation sur le filtre de sortie. λ/4 ligne de transmission. Nous utilisons la simulation de circuit pour comparer l'efficacité de la conversion RF-DC et la perte de circuit des structures conventionnelles et proposées. Les résultats de la simulation montrent que la structure proposée présente une perte de circuit plus faible et une efficacité de conversion RF-DC plus élevée que la structure conventionnelle. Nous fabriquons le circuit redresseur proposé en utilisant une diode barrière GaAs Schottky. Les résultats de simulation et de mesure montrent que la structure proposée du circuit redresseur à shunt unique est capable de rectification et d'adaptation d'impédance. L'efficacité de conversion RF-DC du circuit redresseur fabriqué atteint un maximum de 91.0 %. Cette efficacité de conversion RF-DC constitue un record mondial pour les circuits redresseurs de la bande 920 MHz.
Katsumi KAWAI
Kyoto University
Naoki SHINOHARA
Kyoto University
Tomohiko MITANI
Kyoto University
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Katsumi KAWAI, Naoki SHINOHARA, Tomohiko MITANI, "Novel Structure of Single-Shunt Rectifier Circuit with Impedance Matching at Output Filter" in IEICE TRANSACTIONS on Electronics,
vol. E106-C, no. 2, pp. 50-58, February 2023, doi: 10.1587/transele.2021ECP5064.
Abstract: This study proposes a new structure of a single-shunt rectifier circuit that can reduce circuit loss and improve efficiency over the conventional structure. The proposed structure can provide impedance matching to the measurement system (or receiving antenna) without the use of conventional matching circuits, such as stubs and tapers. The proposed structure can simultaneously perform full-wave rectification and impedance matching by placing a feeding point on the output filter's λ/4 transmission line. We use circuit simulation to compare the RF-DC conversion efficiency and circuit loss of the conventional and proposed structures. The simulation results show that the proposed structure has lower circuit loss and higher RF-DC conversion efficiency than the conventional structure. We fabricate the proposed rectifier circuit using a GaAs Schottky barrier diode. The simulation and measurement results show that the single-shunt rectifier circuit's proposed structure is capable of rectification and impedance matching. The fabricated rectifier circuit's RF-DC conversion efficiency reaches a maximum of 91.0%. This RF-DC conversion efficiency is a world record for 920-MHz band rectifier circuits.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2021ECP5064/_p
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@ARTICLE{e106-c_2_50,
author={Katsumi KAWAI, Naoki SHINOHARA, Tomohiko MITANI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Novel Structure of Single-Shunt Rectifier Circuit with Impedance Matching at Output Filter},
year={2023},
volume={E106-C},
number={2},
pages={50-58},
abstract={This study proposes a new structure of a single-shunt rectifier circuit that can reduce circuit loss and improve efficiency over the conventional structure. The proposed structure can provide impedance matching to the measurement system (or receiving antenna) without the use of conventional matching circuits, such as stubs and tapers. The proposed structure can simultaneously perform full-wave rectification and impedance matching by placing a feeding point on the output filter's λ/4 transmission line. We use circuit simulation to compare the RF-DC conversion efficiency and circuit loss of the conventional and proposed structures. The simulation results show that the proposed structure has lower circuit loss and higher RF-DC conversion efficiency than the conventional structure. We fabricate the proposed rectifier circuit using a GaAs Schottky barrier diode. The simulation and measurement results show that the single-shunt rectifier circuit's proposed structure is capable of rectification and impedance matching. The fabricated rectifier circuit's RF-DC conversion efficiency reaches a maximum of 91.0%. This RF-DC conversion efficiency is a world record for 920-MHz band rectifier circuits.},
keywords={},
doi={10.1587/transele.2021ECP5064},
ISSN={1745-1353},
month={February},}
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TY - JOUR
TI - Novel Structure of Single-Shunt Rectifier Circuit with Impedance Matching at Output Filter
T2 - IEICE TRANSACTIONS on Electronics
SP - 50
EP - 58
AU - Katsumi KAWAI
AU - Naoki SHINOHARA
AU - Tomohiko MITANI
PY - 2023
DO - 10.1587/transele.2021ECP5064
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E106-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 2023
AB - This study proposes a new structure of a single-shunt rectifier circuit that can reduce circuit loss and improve efficiency over the conventional structure. The proposed structure can provide impedance matching to the measurement system (or receiving antenna) without the use of conventional matching circuits, such as stubs and tapers. The proposed structure can simultaneously perform full-wave rectification and impedance matching by placing a feeding point on the output filter's λ/4 transmission line. We use circuit simulation to compare the RF-DC conversion efficiency and circuit loss of the conventional and proposed structures. The simulation results show that the proposed structure has lower circuit loss and higher RF-DC conversion efficiency than the conventional structure. We fabricate the proposed rectifier circuit using a GaAs Schottky barrier diode. The simulation and measurement results show that the single-shunt rectifier circuit's proposed structure is capable of rectification and impedance matching. The fabricated rectifier circuit's RF-DC conversion efficiency reaches a maximum of 91.0%. This RF-DC conversion efficiency is a world record for 920-MHz band rectifier circuits.
ER -