The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Des transistors à effet de champ à grille ferroélectrique (MFSFET) ont été étudiés en utilisant du HfO non dopé2 déposé par pulvérisation magnétron RF en utilisant une cible Hf. Après le processus de recuit post-métallisation (PMA) avec grille supérieure en Pt à 500°C/30s, caractéristique ferroélectrique d'un HfO non dopé de 10 nm d'épaisseur2 a été obtenu. Les MFSFET fabriqués affichaient une fenêtre de mémoire de 1.7 V lorsque la plage de balayage de tension était comprise entre -3 et 3 V.
Min Gee KIM
Tokyo Institute of Technology
Masakazu KATAOKA
Tokyo Institute of Technology
Rengie Mark D. MAILIG
Tokyo Institute of Technology
Shun-ichiro OHMI
Tokyo Institute of Technology
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Min Gee KIM, Masakazu KATAOKA, Rengie Mark D. MAILIG, Shun-ichiro OHMI, "Ferroelectric Gate Field-Effect Transistors with 10nm Thick Nondoped HfO2 Utilizing Pt Gate Electrodes" in IEICE TRANSACTIONS on Electronics,
vol. E103-C, no. 6, pp. 280-285, June 2020, doi: 10.1587/transele.2019FUP0005.
Abstract: Ferroelectric gate field-effect transistors (MFSFETs) were investigated utilizing nondoped HfO2 deposited by RF magnetron sputtering utilizing Hf target. After the post-metallization annealing (PMA) process with Pt top gate at 500°C/30s, ferroelectric characteristic of 10nm thick nondoped HfO2 was obtained. The fabricated MFSFETs showed the memory window of 1.7V when the voltage sweep range was from -3 to 3V.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2019FUP0005/_p
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@ARTICLE{e103-c_6_280,
author={Min Gee KIM, Masakazu KATAOKA, Rengie Mark D. MAILIG, Shun-ichiro OHMI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Ferroelectric Gate Field-Effect Transistors with 10nm Thick Nondoped HfO2 Utilizing Pt Gate Electrodes},
year={2020},
volume={E103-C},
number={6},
pages={280-285},
abstract={Ferroelectric gate field-effect transistors (MFSFETs) were investigated utilizing nondoped HfO2 deposited by RF magnetron sputtering utilizing Hf target. After the post-metallization annealing (PMA) process with Pt top gate at 500°C/30s, ferroelectric characteristic of 10nm thick nondoped HfO2 was obtained. The fabricated MFSFETs showed the memory window of 1.7V when the voltage sweep range was from -3 to 3V.},
keywords={},
doi={10.1587/transele.2019FUP0005},
ISSN={1745-1353},
month={June},}
Copier
TY - JOUR
TI - Ferroelectric Gate Field-Effect Transistors with 10nm Thick Nondoped HfO2 Utilizing Pt Gate Electrodes
T2 - IEICE TRANSACTIONS on Electronics
SP - 280
EP - 285
AU - Min Gee KIM
AU - Masakazu KATAOKA
AU - Rengie Mark D. MAILIG
AU - Shun-ichiro OHMI
PY - 2020
DO - 10.1587/transele.2019FUP0005
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E103-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2020
AB - Ferroelectric gate field-effect transistors (MFSFETs) were investigated utilizing nondoped HfO2 deposited by RF magnetron sputtering utilizing Hf target. After the post-metallization annealing (PMA) process with Pt top gate at 500°C/30s, ferroelectric characteristic of 10nm thick nondoped HfO2 was obtained. The fabricated MFSFETs showed the memory window of 1.7V when the voltage sweep range was from -3 to 3V.
ER -