The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Nous rapportons le contrôle de la tension de seuil (Vth) pour un fonctionnement basse tension (5 V) en OFET en utilisant des couches diélectriques à double grille composées de poly (cinnamate de vinyle) et de SiO2. Nous avons réussi à réaliser une tension de commande de -5V et Vth décalage d'environ 1.0 V. Et programmé Vth était presque inchangé depuis 104s, où le changement relatif de Vth reste supérieur à 99 %.
Yasuyuki ABE
Japan Advanced Institute of Science and Technology
Heisuke SAKAI
Japan Advanced Institute of Science and Technology
Toan Thanh DAO
University of Transport and Communications
Hideyuki MURATA
Japan Advanced Institute of Science and Technology
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Yasuyuki ABE, Heisuke SAKAI, Toan Thanh DAO, Hideyuki MURATA, "Control of Threshold Voltage and Low-Voltage Operation in Organic Field Effect Transistor" in IEICE TRANSACTIONS on Electronics,
vol. E102-C, no. 2, pp. 184-187, February 2019, doi: 10.1587/transele.2018OMS0012.
Abstract: We report the control of threshold voltage (Vth) for low voltage (5V) operation in OFET by using double gate dielectric layers composed of poly (vinyl cinnamate) and SiO2. We succeeded in realizing a driving voltage of -5V and Vth shift by c.a. 1.0V. And programmed Vth was almost unchanged for 104s, where the relative change of Vth remains more than 99%.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2018OMS0012/_p
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@ARTICLE{e102-c_2_184,
author={Yasuyuki ABE, Heisuke SAKAI, Toan Thanh DAO, Hideyuki MURATA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Control of Threshold Voltage and Low-Voltage Operation in Organic Field Effect Transistor},
year={2019},
volume={E102-C},
number={2},
pages={184-187},
abstract={We report the control of threshold voltage (Vth) for low voltage (5V) operation in OFET by using double gate dielectric layers composed of poly (vinyl cinnamate) and SiO2. We succeeded in realizing a driving voltage of -5V and Vth shift by c.a. 1.0V. And programmed Vth was almost unchanged for 104s, where the relative change of Vth remains more than 99%.},
keywords={},
doi={10.1587/transele.2018OMS0012},
ISSN={1745-1353},
month={February},}
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TY - JOUR
TI - Control of Threshold Voltage and Low-Voltage Operation in Organic Field Effect Transistor
T2 - IEICE TRANSACTIONS on Electronics
SP - 184
EP - 187
AU - Yasuyuki ABE
AU - Heisuke SAKAI
AU - Toan Thanh DAO
AU - Hideyuki MURATA
PY - 2019
DO - 10.1587/transele.2018OMS0012
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E102-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 2019
AB - We report the control of threshold voltage (Vth) for low voltage (5V) operation in OFET by using double gate dielectric layers composed of poly (vinyl cinnamate) and SiO2. We succeeded in realizing a driving voltage of -5V and Vth shift by c.a. 1.0V. And programmed Vth was almost unchanged for 104s, where the relative change of Vth remains more than 99%.
ER -