The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
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103
Nous avons développé une conception haute fréquence et intégrée basée sur une technique d'interconnexion à puce retournée (Hi-FIT) en tant que technique d'interconnexion sans fil qui fournit une bande passante de modulation élevée. Le Hi-FIT peut être appliqué à divers dispositifs optiques à grande vitesse (> 100 Gbauds). Le module laser Hi-FIT EA-DFB a une bande passante de 3 dB de 59 GHz. Et avec une opération de modulation d'amplitude d'impulsion (PAM) à 4 niveaux d'intensité à 107 Gbauds, nous avons obtenu un taux d'erreur binaire (BER) inférieur à 3.8 × 10.-3, ce qui est une condition sans erreur, en utilisant un code de correction d'erreur directe (HD-FEC) à décision dure (OH) de 7 %, même après une transmission SMF de 10 km. La bande passante de 3 dB du Hi-FIT employant un sous-ensemble InP-MZM était supérieure à 67 GHz, ce qui était la limite de notre instrument de mesure. Nous avons également démontré une modulation IQ à un débit de 120 Gbauds.
Shigeru KANAZAWA
NTT Corporation
Hiroshi YAMAZAKI
NTT Corporation
Yuta UEDA
NTT Corporation
Wataru KOBAYASHI
NTT Corporation
Yoshihiro OGISO
NTT Corporation
Johsuke OZAKI
NTT Corporation
Takahiko SHINDO
NTT Corporation
Satoshi TSUNASHIMA
NTT Corporation
Hiromasa TANOBE
NTT Corporation
Atsushi ARARATAKE
NTT Corporation
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Shigeru KANAZAWA, Hiroshi YAMAZAKI, Yuta UEDA, Wataru KOBAYASHI, Yoshihiro OGISO, Johsuke OZAKI, Takahiko SHINDO, Satoshi TSUNASHIMA, Hiromasa TANOBE, Atsushi ARARATAKE, "High-Frequency and Integrated Design Based on Flip-Chip Interconnection Technique (Hi-FIT) for High-Speed (>100 Gbaud) Optical Devices" in IEICE TRANSACTIONS on Electronics,
vol. E102-C, no. 4, pp. 340-346, April 2019, doi: 10.1587/transele.2018ODI0001.
Abstract: We developed a high-frequency and integrated design based on a flip-chip interconnection technique (Hi-FIT) as a wire-free interconnection technique that provides a high modulation bandwidth. The Hi-FIT can be applied to various high-speed (>100 Gbaud) optical devices. The Hi-FIT EA-DFB laser module has a 3-dB bandwidth of 59 GHz. And with a 4-intensity-level pulse amplitude modulation (PAM) operation at 107 Gbaud, we obtained a bit-error rate (BER) of less than 3.8×10-3, which is an error-free condition, by using a 7%-overhead (OH) hard-decision forward error correction (HD-FEC) code, even after a 10-km SMF transmission. The 3-dB bandwidth of the Hi-FIT employing an InP-MZM sub-assembly was more than 67 GHz, which was the limit of our measuring instrument. We also demonstrated a 120-Gbaud rate IQ modulation.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2018ODI0001/_p
Copier
@ARTICLE{e102-c_4_340,
author={Shigeru KANAZAWA, Hiroshi YAMAZAKI, Yuta UEDA, Wataru KOBAYASHI, Yoshihiro OGISO, Johsuke OZAKI, Takahiko SHINDO, Satoshi TSUNASHIMA, Hiromasa TANOBE, Atsushi ARARATAKE, },
journal={IEICE TRANSACTIONS on Electronics},
title={High-Frequency and Integrated Design Based on Flip-Chip Interconnection Technique (Hi-FIT) for High-Speed (>100 Gbaud) Optical Devices},
year={2019},
volume={E102-C},
number={4},
pages={340-346},
abstract={We developed a high-frequency and integrated design based on a flip-chip interconnection technique (Hi-FIT) as a wire-free interconnection technique that provides a high modulation bandwidth. The Hi-FIT can be applied to various high-speed (>100 Gbaud) optical devices. The Hi-FIT EA-DFB laser module has a 3-dB bandwidth of 59 GHz. And with a 4-intensity-level pulse amplitude modulation (PAM) operation at 107 Gbaud, we obtained a bit-error rate (BER) of less than 3.8×10-3, which is an error-free condition, by using a 7%-overhead (OH) hard-decision forward error correction (HD-FEC) code, even after a 10-km SMF transmission. The 3-dB bandwidth of the Hi-FIT employing an InP-MZM sub-assembly was more than 67 GHz, which was the limit of our measuring instrument. We also demonstrated a 120-Gbaud rate IQ modulation.},
keywords={},
doi={10.1587/transele.2018ODI0001},
ISSN={1745-1353},
month={April},}
Copier
TY - JOUR
TI - High-Frequency and Integrated Design Based on Flip-Chip Interconnection Technique (Hi-FIT) for High-Speed (>100 Gbaud) Optical Devices
T2 - IEICE TRANSACTIONS on Electronics
SP - 340
EP - 346
AU - Shigeru KANAZAWA
AU - Hiroshi YAMAZAKI
AU - Yuta UEDA
AU - Wataru KOBAYASHI
AU - Yoshihiro OGISO
AU - Johsuke OZAKI
AU - Takahiko SHINDO
AU - Satoshi TSUNASHIMA
AU - Hiromasa TANOBE
AU - Atsushi ARARATAKE
PY - 2019
DO - 10.1587/transele.2018ODI0001
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E102-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2019
AB - We developed a high-frequency and integrated design based on a flip-chip interconnection technique (Hi-FIT) as a wire-free interconnection technique that provides a high modulation bandwidth. The Hi-FIT can be applied to various high-speed (>100 Gbaud) optical devices. The Hi-FIT EA-DFB laser module has a 3-dB bandwidth of 59 GHz. And with a 4-intensity-level pulse amplitude modulation (PAM) operation at 107 Gbaud, we obtained a bit-error rate (BER) of less than 3.8×10-3, which is an error-free condition, by using a 7%-overhead (OH) hard-decision forward error correction (HD-FEC) code, even after a 10-km SMF transmission. The 3-dB bandwidth of the Hi-FIT employing an InP-MZM sub-assembly was more than 67 GHz, which was the limit of our measuring instrument. We also demonstrated a 120-Gbaud rate IQ modulation.
ER -