The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Nous fabriquons et caractérisons une diode arrière GaAsSb/InGaAs (BWD) en vue d'une réalisation d'une rectification micro-ondes à polarisation nulle de haute sensibilité pour la récupération d'énergie des ondes RF. Des BWD p-GaAsSb/n-InGaAs adaptés au réseau ont été fabriqués et leur courant-tension (IV) les caractéristiques et les paramètres S jusqu'à 67 GHz ont été mesurés par rapport à plusieurs types de diamètres mesa dans l'ordre du µm. Notre modèle théorique et notre analyse sont bien adaptés aux mesures IVs sur la base de l’approximation WKB de la transmission. Il est confirmé que le tunneling interbande dû à l'hétérojonction est un mécanisme de transport dominant pour présenter le phénomène non linéaire. IV régime de polarisation autour de zéro, contrairement aux composants de courant de recombinaison ou de diffusion sur la jonction pn, qui contribuent à un régime de courant important. Un modèle de circuit équivalent du BWD est clarifié en confirmant l'ajustement théorique pour une admission dépendant de la fréquence jusqu'à 67 GHz. À partir du modèle de circuit, éliminant la composante d'inductance parasite, la dépendance en fréquence de la sensibilité à la tension du redresseur BWD est dérivée par rapport à plusieurs tailles de diamètre mesa. Il suggère quantitativement une efficacité de la réduction de la taille des mesa pour améliorer la sensibilité intrinsèque de la tension adaptée avec une augmentation de la résistance de jonction et le maintien de l'amplitude de IV coefficient de courbure.
Shinpei YAMASHITA
Tokyo Metropolitan University
Michihiko SUHARA
Tokyo Metropolitan University
Kenichi KAWAGUCHI
Fujitsu Limited,Fujitsu Laboratories Ltd.
Tsuyoshi TAKAHASHI
Fujitsu Limited,Fujitsu Laboratories Ltd.
Masaru SATO
Fujitsu Limited,Fujitsu Laboratories Ltd.
Naoya OKAMOTO
Fujitsu Limited,Fujitsu Laboratories Ltd.
Kiyoto ASAKAWA
Tokyo Metropolitan College of Industrial Technology
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Shinpei YAMASHITA, Michihiko SUHARA, Kenichi KAWAGUCHI, Tsuyoshi TAKAHASHI, Masaru SATO, Naoya OKAMOTO, Kiyoto ASAKAWA, "Characterization and Modeling of a GaAsSb/InGaAs Backward Diode on the Basis of S-Parameter Measurement Up to 67 GHz" in IEICE TRANSACTIONS on Electronics,
vol. E102-C, no. 6, pp. 462-465, June 2019, doi: 10.1587/transele.2018FUS0006.
Abstract: We fabricate and characterize a GaAsSb/InGaAs backward diode (BWD) toward a realization of high sensitivity zero bias microwave rectification for RF wave energy harvest. Lattice-matched p-GaAsSb/n-InGaAs BWDs were fabricated and their current-voltage (I-V) characteristics and S-parameters up to 67 GHz were measured with respect to several sorts of mesa diameters in μm order. Our theoretical model and analysis are well fitted to the measured I-Vs on the basis of WKB approximation of the transmittance. It is confirmed that the interband tunneling due to the heterojunction is a dominant transport mechanism to exhibit the nonlinear I-V around zero bias regime unlike recombination or diffusion current components on p-n junction contribute in large current regime. An equivalent circuit model of the BWD is clarified by confirming theoretical fitting for frequency dependent admittance up to 67 GHz. From the circuit model, eliminating the parasitic inductance component, the frequency dependence of voltage sensitivity of the BWD rectifier is derived with respect to several size of mesa diameter. It quantitatively suggests an effectiveness of mesa size reduction to enhance the intrinsic matched voltage sensitivity with increasing junction resistance and keeping the magnitude of I-V curvature coefficient.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2018FUS0006/_p
Copier
@ARTICLE{e102-c_6_462,
author={Shinpei YAMASHITA, Michihiko SUHARA, Kenichi KAWAGUCHI, Tsuyoshi TAKAHASHI, Masaru SATO, Naoya OKAMOTO, Kiyoto ASAKAWA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Characterization and Modeling of a GaAsSb/InGaAs Backward Diode on the Basis of S-Parameter Measurement Up to 67 GHz},
year={2019},
volume={E102-C},
number={6},
pages={462-465},
abstract={We fabricate and characterize a GaAsSb/InGaAs backward diode (BWD) toward a realization of high sensitivity zero bias microwave rectification for RF wave energy harvest. Lattice-matched p-GaAsSb/n-InGaAs BWDs were fabricated and their current-voltage (I-V) characteristics and S-parameters up to 67 GHz were measured with respect to several sorts of mesa diameters in μm order. Our theoretical model and analysis are well fitted to the measured I-Vs on the basis of WKB approximation of the transmittance. It is confirmed that the interband tunneling due to the heterojunction is a dominant transport mechanism to exhibit the nonlinear I-V around zero bias regime unlike recombination or diffusion current components on p-n junction contribute in large current regime. An equivalent circuit model of the BWD is clarified by confirming theoretical fitting for frequency dependent admittance up to 67 GHz. From the circuit model, eliminating the parasitic inductance component, the frequency dependence of voltage sensitivity of the BWD rectifier is derived with respect to several size of mesa diameter. It quantitatively suggests an effectiveness of mesa size reduction to enhance the intrinsic matched voltage sensitivity with increasing junction resistance and keeping the magnitude of I-V curvature coefficient.},
keywords={},
doi={10.1587/transele.2018FUS0006},
ISSN={1745-1353},
month={June},}
Copier
TY - JOUR
TI - Characterization and Modeling of a GaAsSb/InGaAs Backward Diode on the Basis of S-Parameter Measurement Up to 67 GHz
T2 - IEICE TRANSACTIONS on Electronics
SP - 462
EP - 465
AU - Shinpei YAMASHITA
AU - Michihiko SUHARA
AU - Kenichi KAWAGUCHI
AU - Tsuyoshi TAKAHASHI
AU - Masaru SATO
AU - Naoya OKAMOTO
AU - Kiyoto ASAKAWA
PY - 2019
DO - 10.1587/transele.2018FUS0006
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E102-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2019
AB - We fabricate and characterize a GaAsSb/InGaAs backward diode (BWD) toward a realization of high sensitivity zero bias microwave rectification for RF wave energy harvest. Lattice-matched p-GaAsSb/n-InGaAs BWDs were fabricated and their current-voltage (I-V) characteristics and S-parameters up to 67 GHz were measured with respect to several sorts of mesa diameters in μm order. Our theoretical model and analysis are well fitted to the measured I-Vs on the basis of WKB approximation of the transmittance. It is confirmed that the interband tunneling due to the heterojunction is a dominant transport mechanism to exhibit the nonlinear I-V around zero bias regime unlike recombination or diffusion current components on p-n junction contribute in large current regime. An equivalent circuit model of the BWD is clarified by confirming theoretical fitting for frequency dependent admittance up to 67 GHz. From the circuit model, eliminating the parasitic inductance component, the frequency dependence of voltage sensitivity of the BWD rectifier is derived with respect to several size of mesa diameter. It quantitatively suggests an effectiveness of mesa size reduction to enhance the intrinsic matched voltage sensitivity with increasing junction resistance and keeping the magnitude of I-V curvature coefficient.
ER -