The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Nous avons étudié le recuit post-métallisation (PMA) utilisant une électrode de grille TiN sur le mince HfO ferroélectrique non dopé.2 directement déposé sur p-Si (100) par pulvérisation magnétron RF. Par procédé de recuit post-dépôt (PDA) à 600°C/30 s en N2, la fenêtre de mémoire (MW) dans les caractéristiques CV a été observée dans le Al/HfO2Diodes /p-Si(100) avec HfO de 15 à 24 nm d'épaisseur2. Cependant, cela n’a pas été obtenu lorsque l’épaisseur de HfO2 était de 10 nm. En revanche, le MW a été observé pour Pt/TiN/HfO2 Diodes (10 nm)/p-Si(100) utilisant le processus PMA à 600°C/30 s. Le MW était de 0.5 V lorsque la tension de polarisation était appliquée de -3 à 3 V.
Min Gee KIM
Tokyo Institute of Technology
Shun-ichiro OHMI
Tokyo Institute of Technology
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Min Gee KIM, Shun-ichiro OHMI, "The Effect of PMA with TiN Gate Electrode on the Formation of Ferroelectric Undoped HfO2 Directly Deposited on Si(100)" in IEICE TRANSACTIONS on Electronics,
vol. E102-C, no. 6, pp. 435-440, June 2019, doi: 10.1587/transele.2018FUP0002.
Abstract: We have investigated post-metallization annealing (PMA) utilizing TiN gate electrode on the thin ferroelectric undoped HfO2 directly deposited on p-Si(100) by RF magnetron sputtering. By post-deposition annealing (PDA) process at 600°C/30 s in N2, the memory window (MW) in the C-V characteristics was observed in the Al/HfO2/p-Si(100) diodes with 15 to 24-nm-thick HfO2. However, it was not obtained when the thickness of HfO2 was 10 nm. On the other hand, the MW was observed for Pt/TiN/HfO2 (10 nm)/p-Si(100) diodes utilizing PMA process at 600°C/30 s. The MW was 0.5 V when the bias voltage was applied from -3 to 3 V.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2018FUP0002/_p
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@ARTICLE{e102-c_6_435,
author={Min Gee KIM, Shun-ichiro OHMI, },
journal={IEICE TRANSACTIONS on Electronics},
title={The Effect of PMA with TiN Gate Electrode on the Formation of Ferroelectric Undoped HfO2 Directly Deposited on Si(100)},
year={2019},
volume={E102-C},
number={6},
pages={435-440},
abstract={We have investigated post-metallization annealing (PMA) utilizing TiN gate electrode on the thin ferroelectric undoped HfO2 directly deposited on p-Si(100) by RF magnetron sputtering. By post-deposition annealing (PDA) process at 600°C/30 s in N2, the memory window (MW) in the C-V characteristics was observed in the Al/HfO2/p-Si(100) diodes with 15 to 24-nm-thick HfO2. However, it was not obtained when the thickness of HfO2 was 10 nm. On the other hand, the MW was observed for Pt/TiN/HfO2 (10 nm)/p-Si(100) diodes utilizing PMA process at 600°C/30 s. The MW was 0.5 V when the bias voltage was applied from -3 to 3 V.},
keywords={},
doi={10.1587/transele.2018FUP0002},
ISSN={1745-1353},
month={June},}
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TY - JOUR
TI - The Effect of PMA with TiN Gate Electrode on the Formation of Ferroelectric Undoped HfO2 Directly Deposited on Si(100)
T2 - IEICE TRANSACTIONS on Electronics
SP - 435
EP - 440
AU - Min Gee KIM
AU - Shun-ichiro OHMI
PY - 2019
DO - 10.1587/transele.2018FUP0002
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E102-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2019
AB - We have investigated post-metallization annealing (PMA) utilizing TiN gate electrode on the thin ferroelectric undoped HfO2 directly deposited on p-Si(100) by RF magnetron sputtering. By post-deposition annealing (PDA) process at 600°C/30 s in N2, the memory window (MW) in the C-V characteristics was observed in the Al/HfO2/p-Si(100) diodes with 15 to 24-nm-thick HfO2. However, it was not obtained when the thickness of HfO2 was 10 nm. On the other hand, the MW was observed for Pt/TiN/HfO2 (10 nm)/p-Si(100) diodes utilizing PMA process at 600°C/30 s. The MW was 0.5 V when the bias voltage was applied from -3 to 3 V.
ER -