The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Cet article présente un amplificateur à transconductance opérationnel à très faible consommation de classe AB, fonctionnant dans la région sous-seuil. En utilisant la rétroaction positive partielle dans les miroirs de courant, la transconductance efficace et l'oscillation de tension de sortie sont considérablement améliorées sans consommation d'énergie ni zone de disposition supplémentaires. Les OTA traditionnels et proposés sont conçus et simulés pour un processus CMOS 180 nm. Ils dissipent une puissance ultra faible de 192 nW. L'OTA proposé présente non seulement une amélioration du gain DC de 14 dB, mais également une amélioration du taux de balayage de 200 %. De plus, le gain amélioré conduit à une bande passante à gain unitaire 5.3 fois plus large que celle de l'OTA traditionnelle.
Seong Jin CHOE
Kyungpook National University
Ju Sang LEE
Kyungpook National University
Sung Sik PARK
Kyungpook National University
Sang Dae YU
Kyungpook National University
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Seong Jin CHOE, Ju Sang LEE, Sung Sik PARK, Sang Dae YU, "Ultra-Low-Power Class-AB Bulk-Driven OTA with Enhanced Transconductance" in IEICE TRANSACTIONS on Electronics,
vol. E102-C, no. 5, pp. 420-423, May 2019, doi: 10.1587/transele.2018ECS6002.
Abstract: This paper presents an ultra-low-power class-AB bulk-driven operational transconductance amplifier operating in the subthreshold region. Employing the partial positive feedback in current mirrors, the effective transconductance and output voltage swing are enhanced considerably without additional power consumption and layout area. Both traditional and proposed OTAs are designed and simulated for a 180 nm CMOS process. They dissipate an ultra low power of 192 nW. The proposed OTA features not only a DC gain enhancement of 14 dB but also a slew rate improvement of 200%. In addition, the improved gain leads to a 5.3 times wider unity-gain bandwidth than that of the traditional OTA.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2018ECS6002/_p
Copier
@ARTICLE{e102-c_5_420,
author={Seong Jin CHOE, Ju Sang LEE, Sung Sik PARK, Sang Dae YU, },
journal={IEICE TRANSACTIONS on Electronics},
title={Ultra-Low-Power Class-AB Bulk-Driven OTA with Enhanced Transconductance},
year={2019},
volume={E102-C},
number={5},
pages={420-423},
abstract={This paper presents an ultra-low-power class-AB bulk-driven operational transconductance amplifier operating in the subthreshold region. Employing the partial positive feedback in current mirrors, the effective transconductance and output voltage swing are enhanced considerably without additional power consumption and layout area. Both traditional and proposed OTAs are designed and simulated for a 180 nm CMOS process. They dissipate an ultra low power of 192 nW. The proposed OTA features not only a DC gain enhancement of 14 dB but also a slew rate improvement of 200%. In addition, the improved gain leads to a 5.3 times wider unity-gain bandwidth than that of the traditional OTA.},
keywords={},
doi={10.1587/transele.2018ECS6002},
ISSN={1745-1353},
month={May},}
Copier
TY - JOUR
TI - Ultra-Low-Power Class-AB Bulk-Driven OTA with Enhanced Transconductance
T2 - IEICE TRANSACTIONS on Electronics
SP - 420
EP - 423
AU - Seong Jin CHOE
AU - Ju Sang LEE
AU - Sung Sik PARK
AU - Sang Dae YU
PY - 2019
DO - 10.1587/transele.2018ECS6002
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E102-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2019
AB - This paper presents an ultra-low-power class-AB bulk-driven operational transconductance amplifier operating in the subthreshold region. Employing the partial positive feedback in current mirrors, the effective transconductance and output voltage swing are enhanced considerably without additional power consumption and layout area. Both traditional and proposed OTAs are designed and simulated for a 180 nm CMOS process. They dissipate an ultra low power of 192 nW. The proposed OTA features not only a DC gain enhancement of 14 dB but also a slew rate improvement of 200%. In addition, the improved gain leads to a 5.3 times wider unity-gain bandwidth than that of the traditional OTA.
ER -