The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Pour la communication sans fil, un oscillateur à tension contrôlée (VCO) CMOS monolithique à réservoir LC basse tension est développé avec la technologie de processus CMOS silicium sur isolant (SOI) entièrement appauvri de 0.2 µm. Le VCO dispose d'une technique de double réglage pour obtenir une large plage de réglage avec des varactors à jonction pn latérale. Le VCO présente les caractéristiques suivantes à la tension d'alimentation de 1.5 V : (1) Plage de fréquence de sortie de 1.07 GHz à 1.36 GHz, (2) Troisième harmonique inférieure à -37 dBc et (3) Bruit de phase de -120 dBc/Hz. à une fréquence décalée de 1 MHz.
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Mitsuo NAKAMURA, Hideki SHIMA, Toshimasa MATSUOKA, Kenji TANIGUCHI, "A Low-Voltage SOI-CMOS LC-Tank VCO with Double-Tuning Technique Using Lateral P-N Junction Variable Capacitance" in IEICE TRANSACTIONS on Electronics,
vol. E85-C, no. 7, pp. 1428-1435, July 2002, doi: .
Abstract: For wireless communication, a low-voltage monolithic LC-tank CMOS voltage-controlled-oscillator (VCO) is developed with 0.2-µm fully-depleted silicon-on-insulator (SOI) CMOS process technology. The VCO features a double-tuning technique to achieve a wide tuning range with lateral p-n junction varactors. The VCO has the following features at the supply voltage of 1.5 V: (1) Output frequency range from 1.07 GHz to 1.36 GHz, (2) Third-harmonic below -37 dBc, and (3) Phase noise of -120 dBc/Hz at 1 MHz offset frequency.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_7_1428/_p
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@ARTICLE{e85-c_7_1428,
author={Mitsuo NAKAMURA, Hideki SHIMA, Toshimasa MATSUOKA, Kenji TANIGUCHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Low-Voltage SOI-CMOS LC-Tank VCO with Double-Tuning Technique Using Lateral P-N Junction Variable Capacitance},
year={2002},
volume={E85-C},
number={7},
pages={1428-1435},
abstract={For wireless communication, a low-voltage monolithic LC-tank CMOS voltage-controlled-oscillator (VCO) is developed with 0.2-µm fully-depleted silicon-on-insulator (SOI) CMOS process technology. The VCO features a double-tuning technique to achieve a wide tuning range with lateral p-n junction varactors. The VCO has the following features at the supply voltage of 1.5 V: (1) Output frequency range from 1.07 GHz to 1.36 GHz, (2) Third-harmonic below -37 dBc, and (3) Phase noise of -120 dBc/Hz at 1 MHz offset frequency.},
keywords={},
doi={},
ISSN={},
month={July},}
Copier
TY - JOUR
TI - A Low-Voltage SOI-CMOS LC-Tank VCO with Double-Tuning Technique Using Lateral P-N Junction Variable Capacitance
T2 - IEICE TRANSACTIONS on Electronics
SP - 1428
EP - 1435
AU - Mitsuo NAKAMURA
AU - Hideki SHIMA
AU - Toshimasa MATSUOKA
AU - Kenji TANIGUCHI
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2002
AB - For wireless communication, a low-voltage monolithic LC-tank CMOS voltage-controlled-oscillator (VCO) is developed with 0.2-µm fully-depleted silicon-on-insulator (SOI) CMOS process technology. The VCO features a double-tuning technique to achieve a wide tuning range with lateral p-n junction varactors. The VCO has the following features at the supply voltage of 1.5 V: (1) Output frequency range from 1.07 GHz to 1.36 GHz, (2) Third-harmonic below -37 dBc, and (3) Phase noise of -120 dBc/Hz at 1 MHz offset frequency.
ER -