The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
An LL'invention concerne un amplificateur pilote de transistor bipolaire à hétérojonction (HBT) SiGe à faible courant de repos et à faible distorsion comportant un circuit de commande de polarisation de base autonome. Étant donné que la taille de ce circuit de polarisation est petite et qu'il ne nécessite pas de circuit de commande externe, il est facile de l'intégrer à l'amplificateur pilote sur une seule puce. En fonction du niveau de puissance de sortie, le circuit de contrôle de polarisation de base automatique, qui est la combinaison d'un circuit à tension de base constante et d'un miroir de courant FET à semi-conducteur à oxyde métallique p (MOS) avec une source de courant constant, contrôle automatiquement la tension de base et permet faible courant de repos à faible niveau de puissance de sortie et faible distorsion à niveau de puissance de sortie élevé. Les résultats simulés montrent que l'amplificateur pilote doté du circuit de contrôle de polarisation à base automatique atteint un point de compression de puissance de 1 dB (P1 dB) amélioration de 2.4 dB par rapport à l'amplificateur pilote ayant une tension de base constante conventionnelle dans les mêmes conditions de courant de repos. L'amplificateur pilote fabriqué avec le circuit de polarisation proposé présente une valeur élevée P1 dB de 15.0 dBm avec un faible courant de repos de 15.3 mA.
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Shintaro SHINJO, Kazutomi MORI, Hiroyuki JOBA, Noriharu SUEMATSU, Tadashi TAKAGI, "Low Quiescent Current SiGe HBT Driver Amplifier Having Self Base Bias Control Circuit" in IEICE TRANSACTIONS on Electronics,
vol. E85-C, no. 7, pp. 1404-1411, July 2002, doi: .
Abstract: An L-band low quiescent current and low distortion SiGe heterojunction bipolar transistor (HBT) driver amplifier having a self base bias control circuit is described. Since the size of this bias circuit is small and it does not need an external control circuit, it is easy to be integrated with the driver amplifier on a single chip. According to the output power level, the self base bias control circuit, which is the combination of a constant base voltage circuit and p-metal oxide semiconductor (MOS) FET current mirror with a constant current source, automatically controls the base voltage, and allows low quiescent current at low output power level and low distortion at high output power level. The simulated results show that the driver amplifier having the self base bias control circuit achieves 1 dB power compression point (P1 dB) improvement of 2.4 dB compared with the driver amplifier having a conventional constant base voltage under the same quiescent current condition. The fabricated driver amplifier with the proposed bias circuit shows high P1 dB of 15.0 dBm with low quiescent current of 15.3 mA.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_7_1404/_p
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@ARTICLE{e85-c_7_1404,
author={Shintaro SHINJO, Kazutomi MORI, Hiroyuki JOBA, Noriharu SUEMATSU, Tadashi TAKAGI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Low Quiescent Current SiGe HBT Driver Amplifier Having Self Base Bias Control Circuit},
year={2002},
volume={E85-C},
number={7},
pages={1404-1411},
abstract={An L-band low quiescent current and low distortion SiGe heterojunction bipolar transistor (HBT) driver amplifier having a self base bias control circuit is described. Since the size of this bias circuit is small and it does not need an external control circuit, it is easy to be integrated with the driver amplifier on a single chip. According to the output power level, the self base bias control circuit, which is the combination of a constant base voltage circuit and p-metal oxide semiconductor (MOS) FET current mirror with a constant current source, automatically controls the base voltage, and allows low quiescent current at low output power level and low distortion at high output power level. The simulated results show that the driver amplifier having the self base bias control circuit achieves 1 dB power compression point (P1 dB) improvement of 2.4 dB compared with the driver amplifier having a conventional constant base voltage under the same quiescent current condition. The fabricated driver amplifier with the proposed bias circuit shows high P1 dB of 15.0 dBm with low quiescent current of 15.3 mA.},
keywords={},
doi={},
ISSN={},
month={July},}
Copier
TY - JOUR
TI - Low Quiescent Current SiGe HBT Driver Amplifier Having Self Base Bias Control Circuit
T2 - IEICE TRANSACTIONS on Electronics
SP - 1404
EP - 1411
AU - Shintaro SHINJO
AU - Kazutomi MORI
AU - Hiroyuki JOBA
AU - Noriharu SUEMATSU
AU - Tadashi TAKAGI
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2002
AB - An L-band low quiescent current and low distortion SiGe heterojunction bipolar transistor (HBT) driver amplifier having a self base bias control circuit is described. Since the size of this bias circuit is small and it does not need an external control circuit, it is easy to be integrated with the driver amplifier on a single chip. According to the output power level, the self base bias control circuit, which is the combination of a constant base voltage circuit and p-metal oxide semiconductor (MOS) FET current mirror with a constant current source, automatically controls the base voltage, and allows low quiescent current at low output power level and low distortion at high output power level. The simulated results show that the driver amplifier having the self base bias control circuit achieves 1 dB power compression point (P1 dB) improvement of 2.4 dB compared with the driver amplifier having a conventional constant base voltage under the same quiescent current condition. The fabricated driver amplifier with the proposed bias circuit shows high P1 dB of 15.0 dBm with low quiescent current of 15.3 mA.
ER -