The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Cet article passe en revue les avantages de la technologie MMIC tridimensionnelle au silicium, tels que les lignes de transmission à faibles pertes, le niveau d'intégration élevé et les inductances sur puce à facteur Q élevé. Couplée au concept masterslice, cette technologie offre également une procédure de conception simple, un délai d'exécution court, un faible coût et une intégration potentielle avec les circuits LSI. Un amplificateur en bande K et un convertisseur élévateur démontrent les avantages du fonctionnement haute fréquence et de la faible consommation d'énergie de la technologie Si 3-D MMIC. Un émetteur-récepteur monopuce Si-bipolaire en bande C est proposé pour illustrer le niveau d'intégration élevé offert par le concept masterslice. Enfin, les progrès récents que nous avons réalisés en matière d'inductances sur puce à facteur Q élevé fournissent la conception de l'amplificateur à faible bruit en bande S présenté dans cet article.
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Copier
Belinda PIERNAS, Kenjiro NISHIKAWA, Kenji KAMOGAWA, Ichihiko TOYODA, "Three-Dimensional MMIC Technology on Silicon: Review and Recent Advances" in IEICE TRANSACTIONS on Electronics,
vol. E85-C, no. 7, pp. 1394-1403, July 2002, doi: .
Abstract: This paper reviews the advantages of the silicon three-dimensional MMIC technology such as low loss transmission lines, high integration level, and high Q-factor on-chip inductors. Coupled to the masterslice concept, this technology also offers simple design procedure, short turn-around-time, low cost, and potential integration with LSI circuits. A K-band amplifier and an up-converter demonstrate the high frequency operation and low-power consumption benefits of the Si 3-D MMIC technology. A C-band Si-bipolar single-chip transceiver is proposed to illustrate the high integration level offered by the masterslice concept. Finally, the recent advances we achieved toward high Q-factor on-chip inductors provide the design of the S-band low noise amplifier presented in this paper.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_7_1394/_p
Copier
@ARTICLE{e85-c_7_1394,
author={Belinda PIERNAS, Kenjiro NISHIKAWA, Kenji KAMOGAWA, Ichihiko TOYODA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Three-Dimensional MMIC Technology on Silicon: Review and Recent Advances},
year={2002},
volume={E85-C},
number={7},
pages={1394-1403},
abstract={This paper reviews the advantages of the silicon three-dimensional MMIC technology such as low loss transmission lines, high integration level, and high Q-factor on-chip inductors. Coupled to the masterslice concept, this technology also offers simple design procedure, short turn-around-time, low cost, and potential integration with LSI circuits. A K-band amplifier and an up-converter demonstrate the high frequency operation and low-power consumption benefits of the Si 3-D MMIC technology. A C-band Si-bipolar single-chip transceiver is proposed to illustrate the high integration level offered by the masterslice concept. Finally, the recent advances we achieved toward high Q-factor on-chip inductors provide the design of the S-band low noise amplifier presented in this paper.},
keywords={},
doi={},
ISSN={},
month={July},}
Copier
TY - JOUR
TI - Three-Dimensional MMIC Technology on Silicon: Review and Recent Advances
T2 - IEICE TRANSACTIONS on Electronics
SP - 1394
EP - 1403
AU - Belinda PIERNAS
AU - Kenjiro NISHIKAWA
AU - Kenji KAMOGAWA
AU - Ichihiko TOYODA
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2002
AB - This paper reviews the advantages of the silicon three-dimensional MMIC technology such as low loss transmission lines, high integration level, and high Q-factor on-chip inductors. Coupled to the masterslice concept, this technology also offers simple design procedure, short turn-around-time, low cost, and potential integration with LSI circuits. A K-band amplifier and an up-converter demonstrate the high frequency operation and low-power consumption benefits of the Si 3-D MMIC technology. A C-band Si-bipolar single-chip transceiver is proposed to illustrate the high integration level offered by the masterslice concept. Finally, the recent advances we achieved toward high Q-factor on-chip inductors provide the design of the S-band low noise amplifier presented in this paper.
ER -