The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Nous avons étudié les propriétés électriques de matériaux de transport de trous tels que TPD, α-NPD et m-MTDATA en utilisant in situ mesure de l'effet de champ. Les films TPD, α-NPD et m-MTDATA ont montré des propriétés semi-conductrices de type p et leurs paramètres électriques tels que la conductivité, la mobilité des porteurs et la concentration des porteurs ont été obtenus. Nous avons également examiné l'effet de la température du substrat lors du dépôt sous vide et du traitement thermique après dépôt, sur les paramètres électriques des films. Les résultats expérimentaux ont montré que la conductivité et la mobilité des porteurs diminuaient à mesure que la température du substrat augmentait par rapport à la température de transition vitreuse. Ces diminutions de conductivité et de mobilité des porteurs résultant du traitement thermique semblent être fortement liées au mécanisme de dégradation des dispositifs électroluminescents organiques.
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Masaaki IIZUKA, Masakazu NAKAMURA, Kazuhiro KUDO, Kuniaki TANAKA, "Electrical Characterization of Hole Transport Materials Using In-situ Field Effect Measurement" in IEICE TRANSACTIONS on Electronics,
vol. E85-C, no. 6, pp. 1311-1316, June 2002, doi: .
Abstract: We investigated the electrical properties of hole transport materials such as TPD, α-NPD and m-MTDATA using in-situ field effect measurement. TPD, α-NPD and m-MTDATA films showed p-type semiconducting properties, and their electrical parameters such as conductivity, carrier mobility and carrier concentration were obtained. We also examined the effect of the substrate temperature during vacuum deposition and the thermal treatment after deposition, on the electrical parameters of the films. Experimental results showed that conductivity and carrier mobility decreased as the substrate temperature increased over the glass transition temperature. These decreases in conductivity and carrier mobility as a result of thermal treatment appear to be strongly related to the degradation mechanism of organic electroluminescent devices.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_6_1311/_p
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@ARTICLE{e85-c_6_1311,
author={Masaaki IIZUKA, Masakazu NAKAMURA, Kazuhiro KUDO, Kuniaki TANAKA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Electrical Characterization of Hole Transport Materials Using In-situ Field Effect Measurement},
year={2002},
volume={E85-C},
number={6},
pages={1311-1316},
abstract={We investigated the electrical properties of hole transport materials such as TPD, α-NPD and m-MTDATA using in-situ field effect measurement. TPD, α-NPD and m-MTDATA films showed p-type semiconducting properties, and their electrical parameters such as conductivity, carrier mobility and carrier concentration were obtained. We also examined the effect of the substrate temperature during vacuum deposition and the thermal treatment after deposition, on the electrical parameters of the films. Experimental results showed that conductivity and carrier mobility decreased as the substrate temperature increased over the glass transition temperature. These decreases in conductivity and carrier mobility as a result of thermal treatment appear to be strongly related to the degradation mechanism of organic electroluminescent devices.},
keywords={},
doi={},
ISSN={},
month={June},}
Copier
TY - JOUR
TI - Electrical Characterization of Hole Transport Materials Using In-situ Field Effect Measurement
T2 - IEICE TRANSACTIONS on Electronics
SP - 1311
EP - 1316
AU - Masaaki IIZUKA
AU - Masakazu NAKAMURA
AU - Kazuhiro KUDO
AU - Kuniaki TANAKA
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2002
AB - We investigated the electrical properties of hole transport materials such as TPD, α-NPD and m-MTDATA using in-situ field effect measurement. TPD, α-NPD and m-MTDATA films showed p-type semiconducting properties, and their electrical parameters such as conductivity, carrier mobility and carrier concentration were obtained. We also examined the effect of the substrate temperature during vacuum deposition and the thermal treatment after deposition, on the electrical parameters of the films. Experimental results showed that conductivity and carrier mobility decreased as the substrate temperature increased over the glass transition temperature. These decreases in conductivity and carrier mobility as a result of thermal treatment appear to be strongly related to the degradation mechanism of organic electroluminescent devices.
ER -