The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Nous rendons compte de l'analyse et de la fabrication de transistors à effet de champ à semi-conducteur à oxyde métallique (MOSFET) verticaux PtSi Schottky source/drain, qui peuvent être combinés avec des dispositifs à effet quantique tels que des diodes tunnel résonantes. L'analyse a été réalisée par approximation unidimensionnelle de la structure du dispositif, approximation WKB de la probabilité de tunneling dans le tunneling à barrière Schottky et calcul auto-cohérent. Le calcul théorique a montré une bonne maniabilité (750 µA/µm) de cet appareil avec tOX = 1 nm et tSi = 5 nm. À titre d'expérience préliminaire, des dispositifs avec une épaisseur de canal Si de 8 nm, 20 nm ou 30 nm et une longueur de canal vertical de 55 nm ont été fabriqués. Bien que le courant de drain à l'état « activé » soit faible en raison de l'épaisseur de l'oxyde de grille de 8 nm, l'analyse et la mesure ont montré un accord raisonnable en ce qui concerne la maniabilité. Sur la base des résultats de l'analyse théorique, la maniabilité du dispositif peut être considérablement améliorée en réduisant l'épaisseur de l'oxyde de grille.
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Masafumi TSUTSUI, Toshiaki NAGAI, Masahiro ASADA, "Analysis and Fabrication of P-Type Vertical PtSi Schottky Source/Drain MOSFET" in IEICE TRANSACTIONS on Electronics,
vol. E85-C, no. 5, pp. 1191-1199, May 2002, doi: .
Abstract: We report on the analysis and fabrication of vertical PtSi Schottky source/drain metal oxide semiconductor field effect transistors (MOSFETs), which are suitable for combination with quantum effect devices such as resonant tunneling diodes. Analysis was carried out by one-dimensional approximation of the device structure, WKB approximation of the tunneling probability in Schottky barrier tunneling and self-consistent calculation. Theoretical calculation showed good drivability (750 µA/µm) of this device with tOX = 1 nm and tSi = 5 nm. As a preliminary experiment, devices with a Si channel thickness of 8 nm, 20 nm or 30 nm and a vertical channel length of 55 nm were fabricated. Although the drain current at the "on" state was small due to the thick gate oxide of 8 nm, analysis and measurement showed reasonable agreement with respect to the drivability. Based on the results of theoretical analysis, the device drivability can be much improved by reducing the gate oxide thickness.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_5_1191/_p
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@ARTICLE{e85-c_5_1191,
author={Masafumi TSUTSUI, Toshiaki NAGAI, Masahiro ASADA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Analysis and Fabrication of P-Type Vertical PtSi Schottky Source/Drain MOSFET},
year={2002},
volume={E85-C},
number={5},
pages={1191-1199},
abstract={We report on the analysis and fabrication of vertical PtSi Schottky source/drain metal oxide semiconductor field effect transistors (MOSFETs), which are suitable for combination with quantum effect devices such as resonant tunneling diodes. Analysis was carried out by one-dimensional approximation of the device structure, WKB approximation of the tunneling probability in Schottky barrier tunneling and self-consistent calculation. Theoretical calculation showed good drivability (750 µA/µm) of this device with tOX = 1 nm and tSi = 5 nm. As a preliminary experiment, devices with a Si channel thickness of 8 nm, 20 nm or 30 nm and a vertical channel length of 55 nm were fabricated. Although the drain current at the "on" state was small due to the thick gate oxide of 8 nm, analysis and measurement showed reasonable agreement with respect to the drivability. Based on the results of theoretical analysis, the device drivability can be much improved by reducing the gate oxide thickness.},
keywords={},
doi={},
ISSN={},
month={May},}
Copier
TY - JOUR
TI - Analysis and Fabrication of P-Type Vertical PtSi Schottky Source/Drain MOSFET
T2 - IEICE TRANSACTIONS on Electronics
SP - 1191
EP - 1199
AU - Masafumi TSUTSUI
AU - Toshiaki NAGAI
AU - Masahiro ASADA
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2002
AB - We report on the analysis and fabrication of vertical PtSi Schottky source/drain metal oxide semiconductor field effect transistors (MOSFETs), which are suitable for combination with quantum effect devices such as resonant tunneling diodes. Analysis was carried out by one-dimensional approximation of the device structure, WKB approximation of the tunneling probability in Schottky barrier tunneling and self-consistent calculation. Theoretical calculation showed good drivability (750 µA/µm) of this device with tOX = 1 nm and tSi = 5 nm. As a preliminary experiment, devices with a Si channel thickness of 8 nm, 20 nm or 30 nm and a vertical channel length of 55 nm were fabricated. Although the drain current at the "on" state was small due to the thick gate oxide of 8 nm, analysis and measurement showed reasonable agreement with respect to the drivability. Based on the results of theoretical analysis, the device drivability can be much improved by reducing the gate oxide thickness.
ER -