The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Cet article décrit deux types d'amplificateurs MMIC à faible bruit/pilote (LN/D-As) adaptés aux applications sans fil à courte portée de 2.4 GHz et 5.2 GHz. Les circuits intégrés sont fabriqués dans un CMOS en vrac de 0.18 µm qui ne comporte aucune étape de traitement supplémentaire pour améliorer les performances RF. L'utilisation réussie de la topologie de réutilisation du courant et des condensateurs interdigités (IDC) permet des opérations à faible bruit et à puissance de sortie élevée avec une faible dissipation de courant malgré la fabrication de puces dans le CMOS en masse conduisant à d'importantes pertes de substrat RF et de conducteur. Les principaux résultats de mesure des deux LN/D-A sont les suivants : un facteur de bruit (NF) de 3.8 dB et un gain de 10.1 dB dans les conditions de 1.8 V et 6 mA, un gain de 3.4 dBm 1 dB compressé puissance de sortie (P1dB) pour une alimentation en tension de 2.4 V et un courant de fonctionnement de 13 mA pour le LN/DA de 2.4 GHz, et un NF de 4.9 dB et un gain de 11.1 dB avec une condition d'alimentation de 1.8 V et 10 mA, un 2.3 dBm P.1dB à 2.4 V et 16 mA pour le LN/DA à 5.2 GHz. Les deux MMIC conviennent aux amplificateurs à faible bruit et aux amplificateurs de commande dans les systèmes sans fil à faible coût et à faible consommation de 2.4 GHz et 5.2 GHz tels que Bluetooth et hiperLAN.
Kazuya YAMAMOTO
Tetsuya HEIMA
Akihiko FURUKAWA
Masayoshi ONO
Yasushi HASHIZUME
Hiroshi KOMURASAKI
Hisayasu SATO
Naoyuki KATO
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Kazuya YAMAMOTO, Tetsuya HEIMA, Akihiko FURUKAWA, Masayoshi ONO, Yasushi HASHIZUME, Hiroshi KOMURASAKI, Hisayasu SATO, Naoyuki KATO, "Design and Experimental Results of CMOS Low-Noise/Driver MMIC Amplifiers for Use in 2.4-GHz and 5.2-GHz Wireless Communications" in IEICE TRANSACTIONS on Electronics,
vol. E85-C, no. 2, pp. 400-407, February 2002, doi: .
Abstract: This paper describes two kinds of on-chip matched low-noise/driver MMIC amplifiers (LN/D-As) suitable for 2.4-GHz and 5.2-GHz short-range wireless applications. The ICs are fabricated in a 0.18 µm bulk CMOS which has no extra processing steps for enhancing the RF performance. The successful use of the current-reuse topology and interdigitated capacitors (IDCs) enables sufficiently low-noise and high output power operations with low current dissipation despite the chip fabrication in the bulk CMOS leading to large RF substrate and conductor losses. The main measurement results of the two LN/D-As are as follows: a 3.8-dB noise figure (NF) and a 10.1-dB gain under the conditions of 1.8 V and 6 mA, a 3.4-dBm 1-dB gain compressed output power (P1dB) for a 2.4-V voltage supply and a 13-mA operating current for the 2.4-GHz LN/D-A, and a 4.9-dB NF and an 11.1-dB gain with a 1.8 V and 10 mA supply condition, a 2.3-dBm P1dB at 2.4 V and 16 mA for the 5.2-GHz LN/D-A. Both MMICs are suited for low-noise amplifiers and driver amplifiers in 2.4-GHz and 5.2-GHz low-cost, low-power wireless systems such as Bluetooth and hiperLAN.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_2_400/_p
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@ARTICLE{e85-c_2_400,
author={Kazuya YAMAMOTO, Tetsuya HEIMA, Akihiko FURUKAWA, Masayoshi ONO, Yasushi HASHIZUME, Hiroshi KOMURASAKI, Hisayasu SATO, Naoyuki KATO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Design and Experimental Results of CMOS Low-Noise/Driver MMIC Amplifiers for Use in 2.4-GHz and 5.2-GHz Wireless Communications},
year={2002},
volume={E85-C},
number={2},
pages={400-407},
abstract={This paper describes two kinds of on-chip matched low-noise/driver MMIC amplifiers (LN/D-As) suitable for 2.4-GHz and 5.2-GHz short-range wireless applications. The ICs are fabricated in a 0.18 µm bulk CMOS which has no extra processing steps for enhancing the RF performance. The successful use of the current-reuse topology and interdigitated capacitors (IDCs) enables sufficiently low-noise and high output power operations with low current dissipation despite the chip fabrication in the bulk CMOS leading to large RF substrate and conductor losses. The main measurement results of the two LN/D-As are as follows: a 3.8-dB noise figure (NF) and a 10.1-dB gain under the conditions of 1.8 V and 6 mA, a 3.4-dBm 1-dB gain compressed output power (P1dB) for a 2.4-V voltage supply and a 13-mA operating current for the 2.4-GHz LN/D-A, and a 4.9-dB NF and an 11.1-dB gain with a 1.8 V and 10 mA supply condition, a 2.3-dBm P1dB at 2.4 V and 16 mA for the 5.2-GHz LN/D-A. Both MMICs are suited for low-noise amplifiers and driver amplifiers in 2.4-GHz and 5.2-GHz low-cost, low-power wireless systems such as Bluetooth and hiperLAN.},
keywords={},
doi={},
ISSN={},
month={February},}
Copier
TY - JOUR
TI - Design and Experimental Results of CMOS Low-Noise/Driver MMIC Amplifiers for Use in 2.4-GHz and 5.2-GHz Wireless Communications
T2 - IEICE TRANSACTIONS on Electronics
SP - 400
EP - 407
AU - Kazuya YAMAMOTO
AU - Tetsuya HEIMA
AU - Akihiko FURUKAWA
AU - Masayoshi ONO
AU - Yasushi HASHIZUME
AU - Hiroshi KOMURASAKI
AU - Hisayasu SATO
AU - Naoyuki KATO
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 2002
AB - This paper describes two kinds of on-chip matched low-noise/driver MMIC amplifiers (LN/D-As) suitable for 2.4-GHz and 5.2-GHz short-range wireless applications. The ICs are fabricated in a 0.18 µm bulk CMOS which has no extra processing steps for enhancing the RF performance. The successful use of the current-reuse topology and interdigitated capacitors (IDCs) enables sufficiently low-noise and high output power operations with low current dissipation despite the chip fabrication in the bulk CMOS leading to large RF substrate and conductor losses. The main measurement results of the two LN/D-As are as follows: a 3.8-dB noise figure (NF) and a 10.1-dB gain under the conditions of 1.8 V and 6 mA, a 3.4-dBm 1-dB gain compressed output power (P1dB) for a 2.4-V voltage supply and a 13-mA operating current for the 2.4-GHz LN/D-A, and a 4.9-dB NF and an 11.1-dB gain with a 1.8 V and 10 mA supply condition, a 2.3-dBm P1dB at 2.4 V and 16 mA for the 5.2-GHz LN/D-A. Both MMICs are suited for low-noise amplifiers and driver amplifiers in 2.4-GHz and 5.2-GHz low-cost, low-power wireless systems such as Bluetooth and hiperLAN.
ER -