The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Les percées dans la croissance cristalline et le contrôle de la conductivité des semi-conducteurs au nitrure au cours des deux dernières décennies ont conduit à des développements tels que les diodes électroluminescentes bleues et vertes à haute luminosité et les diodes laser violettes à longue durée de vie, etc. Tous ces appareils à base de nitrure sont robustes et les plus respectueux de l’environnement disponibles. Ils nous permettent d’économiser d’énormes quantités d’énergie et constitueront des éléments clés des technologies de l’information avancées. De nouveaux progrès dans le domaine de la croissance cristalline et de l’ingénierie des dispositifs ouvriront la voie à de nouveaux dispositifs pionniers basés sur des semi-conducteurs au nitrure. Dans cet article, l'évolution des dispositifs électroluminescents à base de nitrures est passée en revue et les problèmes clés qui doivent être résolus pour que les nitrures soient pleinement développés sont discutés.
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Isamu AKASAKI, Satoshi KAMIYAMA, Hiroshi AMANO, "The Evolution of Nitride-Based Light-Emitting Devices" in IEICE TRANSACTIONS on Electronics,
vol. E85-C, no. 1, pp. 2-9, January 2002, doi: .
Abstract: Breakthroughs in crystal growth and conductivity control of nitride semiconductors during last two decades have led to such developments as high-brightness blue and green light-emitting diodes and long-lived violet laser diodes and so on. All of these nitride-based devices are robust and the most environmentally-friendly ones available. They enable us to save tremendous amount of energy and will be key devices in advanced information technology. Further progress in the area of crystal growth and device engineering will open up new frontier devices based on nitride semiconductors. In this paper, the evolution of nitride-based light-emitting devices is reviewed and the key issues, which must be addressed for nitrides to be fully developed, are discussed.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_1_2/_p
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@ARTICLE{e85-c_1_2,
author={Isamu AKASAKI, Satoshi KAMIYAMA, Hiroshi AMANO, },
journal={IEICE TRANSACTIONS on Electronics},
title={The Evolution of Nitride-Based Light-Emitting Devices},
year={2002},
volume={E85-C},
number={1},
pages={2-9},
abstract={Breakthroughs in crystal growth and conductivity control of nitride semiconductors during last two decades have led to such developments as high-brightness blue and green light-emitting diodes and long-lived violet laser diodes and so on. All of these nitride-based devices are robust and the most environmentally-friendly ones available. They enable us to save tremendous amount of energy and will be key devices in advanced information technology. Further progress in the area of crystal growth and device engineering will open up new frontier devices based on nitride semiconductors. In this paper, the evolution of nitride-based light-emitting devices is reviewed and the key issues, which must be addressed for nitrides to be fully developed, are discussed.},
keywords={},
doi={},
ISSN={},
month={January},}
Copier
TY - JOUR
TI - The Evolution of Nitride-Based Light-Emitting Devices
T2 - IEICE TRANSACTIONS on Electronics
SP - 2
EP - 9
AU - Isamu AKASAKI
AU - Satoshi KAMIYAMA
AU - Hiroshi AMANO
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 2002
AB - Breakthroughs in crystal growth and conductivity control of nitride semiconductors during last two decades have led to such developments as high-brightness blue and green light-emitting diodes and long-lived violet laser diodes and so on. All of these nitride-based devices are robust and the most environmentally-friendly ones available. They enable us to save tremendous amount of energy and will be key devices in advanced information technology. Further progress in the area of crystal growth and device engineering will open up new frontier devices based on nitride semiconductors. In this paper, the evolution of nitride-based light-emitting devices is reviewed and the key issues, which must be addressed for nitrides to be fully developed, are discussed.
ER -