The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Nous rapportons, dans cet article, un processus combiné de photo-oxydation et de PECVD utilisant TEOS et O2 gaz pour produire un SiO2 isolateur de grille pour TFT poly-Si. La lumière d'une longueur d'onde de 172 nm provenant d'une lampe excimère Xe génère des radicaux d'oxygène actif de manière efficace et sélective sans produire d'ozone. Ces radicaux d'oxygène oxydent efficacement le silicium. Contrairement à l'oxydation par plasma, la photo-oxydation offre la possibilité de produire des oxydes de grille sans bombardement ionique. Interfaces oxyde-silicium avec densités de pièges d'interface de 2-3
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Yukihiko NAKATA, Tetsuya OKAMOTO, Toshimasa HAMADA, Takashi ITOGA, Yutaka ISHII, "Low-Temperature Gate Insulator for Poly-Si Thin Film Transistors by Combination of Photo-Oxidation and Plasma Enhanced Chemical Vapor Deposition Using Tetraethylorthosilicate and O2 Gases" in IEICE TRANSACTIONS on Electronics,
vol. E85-C, no. 11, pp. 1849-1853, November 2002, doi: .
Abstract: We report, in this paper, on a combined process of photo-oxidation and PECVD using TEOS and O2 gases to produce an SiO2 gate insulator for poly-Si TFTs. Light of 172 nm-wavelength from a Xe excimer lamp generates active oxygen radicals efficiently and selectively without producing ozone. These oxygen radicals efficiently oxidize silicon. In contrast to plasma oxidation, photo-oxidation offers the ability to produce gate oxides without ion bombardment. Oxide-silicon interfaces with interface trap densities of 2-3
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_11_1849/_p
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@ARTICLE{e85-c_11_1849,
author={Yukihiko NAKATA, Tetsuya OKAMOTO, Toshimasa HAMADA, Takashi ITOGA, Yutaka ISHII, },
journal={IEICE TRANSACTIONS on Electronics},
title={Low-Temperature Gate Insulator for Poly-Si Thin Film Transistors by Combination of Photo-Oxidation and Plasma Enhanced Chemical Vapor Deposition Using Tetraethylorthosilicate and O2 Gases},
year={2002},
volume={E85-C},
number={11},
pages={1849-1853},
abstract={We report, in this paper, on a combined process of photo-oxidation and PECVD using TEOS and O2 gases to produce an SiO2 gate insulator for poly-Si TFTs. Light of 172 nm-wavelength from a Xe excimer lamp generates active oxygen radicals efficiently and selectively without producing ozone. These oxygen radicals efficiently oxidize silicon. In contrast to plasma oxidation, photo-oxidation offers the ability to produce gate oxides without ion bombardment. Oxide-silicon interfaces with interface trap densities of 2-3
keywords={},
doi={},
ISSN={},
month={November},}
Copier
TY - JOUR
TI - Low-Temperature Gate Insulator for Poly-Si Thin Film Transistors by Combination of Photo-Oxidation and Plasma Enhanced Chemical Vapor Deposition Using Tetraethylorthosilicate and O2 Gases
T2 - IEICE TRANSACTIONS on Electronics
SP - 1849
EP - 1853
AU - Yukihiko NAKATA
AU - Tetsuya OKAMOTO
AU - Toshimasa HAMADA
AU - Takashi ITOGA
AU - Yutaka ISHII
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 2002
AB - We report, in this paper, on a combined process of photo-oxidation and PECVD using TEOS and O2 gases to produce an SiO2 gate insulator for poly-Si TFTs. Light of 172 nm-wavelength from a Xe excimer lamp generates active oxygen radicals efficiently and selectively without producing ozone. These oxygen radicals efficiently oxidize silicon. In contrast to plasma oxidation, photo-oxidation offers the ability to produce gate oxides without ion bombardment. Oxide-silicon interfaces with interface trap densities of 2-3
ER -