The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
La linéarité de l'amplificateur de puissance à transistor à effet de champ GaAs (FET) est fortement influencée par les caractéristiques non linéaires de la capacité grille-source (Cgs) et le courant drain-source (Ids) pour les FET. Cependant, les méthodes d'analyse suggérées précédemment de la non-linéarité du GaAs FET se concentrent principalement sur les investigations de chaque composant non linéaire individuel (Cgs or Ids) sans tenir compte des deux effets non linéaires. Nous analysons plus précisément la non-linéarité des FET GaAs en considérant les effets non linéaires de Cgs et à la Ids simultanément. Nous étudions également la distorsion d'intermodulation du troisième ordre (IMD3) du GaAs FET par rapport aux impédances de source et de charge qui minimisent les non-linéarités du FET. A partir des résultats de simulation par la technique de la série Volterra, nous montrons que le moins IMD3 se trouve à la résistance minimale de la source (RS) et la résistance à la charge maximale (RL) dans la puissance de sortie équivalente (Pande) contours. Les résultats simulés sont comparés aux données de charge et d'extraction de source, avec un bon accord.
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Kwang-Ho AHN, Soong-Hak LEE, Yoon-Ha JEONG, "Effects of Source and Load Impedance on the Intermodulation Distortion Products of GaAs FETs" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 8, pp. 1104-1110, August 2001, doi: .
Abstract: The linearity of the GaAs Field Effect Transistor (FET) power amplifier is greatly influenced by the nonlinear characteristics of gate-source capacitance (Cgs) and drain-source current (Ids) for the FETs. However, previously suggested analysis methods of GaAs FET non-linearity are mainly focused on the investigations by each individual non-linear component (Cgs or Ids) without considering both non-linear effects. We analyze more accurately the non-linearity of GaAs FETs by considering non-linear effects of Cgs and Ids simultaneously. We also investigate the third-order intermodulation distortion (IMD3) of the GaAs FET in relation to source and load impedances that minimize FET non-linearities. From the simulation results by Volterra-series technique, we show that the least IMD3 is found at the minimum source resistance (RS) and maximum load resistance (RL) in the equivalent output power (Pout) contour. Simulated results are compared with the load and source pull data, with good agreement.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_8_1104/_p
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@ARTICLE{e84-c_8_1104,
author={Kwang-Ho AHN, Soong-Hak LEE, Yoon-Ha JEONG, },
journal={IEICE TRANSACTIONS on Electronics},
title={Effects of Source and Load Impedance on the Intermodulation Distortion Products of GaAs FETs},
year={2001},
volume={E84-C},
number={8},
pages={1104-1110},
abstract={The linearity of the GaAs Field Effect Transistor (FET) power amplifier is greatly influenced by the nonlinear characteristics of gate-source capacitance (Cgs) and drain-source current (Ids) for the FETs. However, previously suggested analysis methods of GaAs FET non-linearity are mainly focused on the investigations by each individual non-linear component (Cgs or Ids) without considering both non-linear effects. We analyze more accurately the non-linearity of GaAs FETs by considering non-linear effects of Cgs and Ids simultaneously. We also investigate the third-order intermodulation distortion (IMD3) of the GaAs FET in relation to source and load impedances that minimize FET non-linearities. From the simulation results by Volterra-series technique, we show that the least IMD3 is found at the minimum source resistance (RS) and maximum load resistance (RL) in the equivalent output power (Pout) contour. Simulated results are compared with the load and source pull data, with good agreement.},
keywords={},
doi={},
ISSN={},
month={August},}
Copier
TY - JOUR
TI - Effects of Source and Load Impedance on the Intermodulation Distortion Products of GaAs FETs
T2 - IEICE TRANSACTIONS on Electronics
SP - 1104
EP - 1110
AU - Kwang-Ho AHN
AU - Soong-Hak LEE
AU - Yoon-Ha JEONG
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2001
AB - The linearity of the GaAs Field Effect Transistor (FET) power amplifier is greatly influenced by the nonlinear characteristics of gate-source capacitance (Cgs) and drain-source current (Ids) for the FETs. However, previously suggested analysis methods of GaAs FET non-linearity are mainly focused on the investigations by each individual non-linear component (Cgs or Ids) without considering both non-linear effects. We analyze more accurately the non-linearity of GaAs FETs by considering non-linear effects of Cgs and Ids simultaneously. We also investigate the third-order intermodulation distortion (IMD3) of the GaAs FET in relation to source and load impedances that minimize FET non-linearities. From the simulation results by Volterra-series technique, we show that the least IMD3 is found at the minimum source resistance (RS) and maximum load resistance (RL) in the equivalent output power (Pout) contour. Simulated results are compared with the load and source pull data, with good agreement.
ER -