The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Les caractéristiques de tension actuelle du transistor balistique à effet de champ à semi-conducteur à oxyde métallique (MOSFET) sont passées en revue. En réduisant la diffusion des porteurs en utilisant par exemple la structure de canal intrinsèque et le fonctionnement à basse température, le fonctionnement des MOSFET de taille nanométrique à inférieure à 0.1 µm se rapproche du transport balistique. Le courant de drain est dérivé de l'analyse du comportement du porteur au voisinage du potentiel maximum dans le canal. La dégénérescence des porteuses et la répartition prédominante des porteuses dans la sous-bande la plus basse autour du point maximum ont des effets critiques sur la valeur actuelle. Une approximation pratique du courant en termes de tensions aux bornes est donnée. Le mécanisme de contrôle actuel est discuté avec l'utilisation de la « vitesse d'injection », avec laquelle les porteurs sont injectés de la source au canal. Un indice représentant la balisticité est donné et certaines données expérimentales publiées sont analysées. Le transport du MOSFET quasi-balistique est discuté.
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Copier
Kenji NATORI, "Scaling Limit of the MOS Transistor--A Ballistic MOSFET--" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 8, pp. 1029-1036, August 2001, doi: .
Abstract: The current voltage characteristics of the ballistic metal oxide semiconductor field effect transistor (MOSFET) is reviewed. Reducing the carrier scattering by employing e.g. the intrinsic channel structure and the low temperature operation, nanometer to sub-0.1 µm size MOSFETs operation approaches the ballistic transport. The drain current is derived by analyzing the carrier behavior in the vicinity of the potential maximum in the channel. The carrier degeneracy and the predominant carrier distribution in the lowest subband around the maximum point have critical effects on the current value. A convenient approximation of the current in terms of terminal voltages is given. The current control mechanism is discussed with use of the "Injection velocity," with which carriers are injected from the source to the channel. An index to represent the ballisticity is given, and some published experimental data are analyzed. Transport of the quasi-ballistic MOSFET is discussed.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_8_1029/_p
Copier
@ARTICLE{e84-c_8_1029,
author={Kenji NATORI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Scaling Limit of the MOS Transistor--A Ballistic MOSFET--},
year={2001},
volume={E84-C},
number={8},
pages={1029-1036},
abstract={The current voltage characteristics of the ballistic metal oxide semiconductor field effect transistor (MOSFET) is reviewed. Reducing the carrier scattering by employing e.g. the intrinsic channel structure and the low temperature operation, nanometer to sub-0.1 µm size MOSFETs operation approaches the ballistic transport. The drain current is derived by analyzing the carrier behavior in the vicinity of the potential maximum in the channel. The carrier degeneracy and the predominant carrier distribution in the lowest subband around the maximum point have critical effects on the current value. A convenient approximation of the current in terms of terminal voltages is given. The current control mechanism is discussed with use of the "Injection velocity," with which carriers are injected from the source to the channel. An index to represent the ballisticity is given, and some published experimental data are analyzed. Transport of the quasi-ballistic MOSFET is discussed.},
keywords={},
doi={},
ISSN={},
month={August},}
Copier
TY - JOUR
TI - Scaling Limit of the MOS Transistor--A Ballistic MOSFET--
T2 - IEICE TRANSACTIONS on Electronics
SP - 1029
EP - 1036
AU - Kenji NATORI
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2001
AB - The current voltage characteristics of the ballistic metal oxide semiconductor field effect transistor (MOSFET) is reviewed. Reducing the carrier scattering by employing e.g. the intrinsic channel structure and the low temperature operation, nanometer to sub-0.1 µm size MOSFETs operation approaches the ballistic transport. The drain current is derived by analyzing the carrier behavior in the vicinity of the potential maximum in the channel. The carrier degeneracy and the predominant carrier distribution in the lowest subband around the maximum point have critical effects on the current value. A convenient approximation of the current in terms of terminal voltages is given. The current control mechanism is discussed with use of the "Injection velocity," with which carriers are injected from the source to the channel. An index to represent the ballisticity is given, and some published experimental data are analyzed. Transport of the quasi-ballistic MOSFET is discussed.
ER -