The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Une technique de dépôt en 2 étapes a été introduite dans la croissance hétéroépitaxiale du titanate de baryum (BaTiO3) Films minces. BaTiO hétéroépitaxial3 les films ont été préparés sur un SrRuO3/ SrTiO3 substrat par pulvérisation magnétron radiofréquence (RF) avec trois types de méthodes de dépôt : dépôt à faible puissance RF, dépôt en 2 étapes et dépôt à haute puissance. Les propriétés cristallographiques et ferroélectriques ont été évaluées pour les films hétéroépitaxiaux. Lorsque le condensateur épitaxial a été préparé par la technique de dépôt en 2 étapes, la polarisation rémanente ferroélectrique, 2Pr, a été maximisé. Les conditions de dépôt optimisées pour améliorer la qualité des cristaux sont discutées en termes de dommages et de diffusion, qui pourraient être introduits dans les films d'oxyde lors de la croissance épitaxiale, et contrôlées respectivement par la puissance RF et le temps de dépôt.
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Naoko YANASE, Kazuhide ABE, Noburu FUKUSHIMA, Takashi KAWAKUBO, "Improvement of Ferroelectric Hysteresis Curves in Epitaxial BaTiO3 Film Capacitors by 2-Step Deposition" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 6, pp. 796-801, June 2001, doi: .
Abstract: A 2-step deposition technique was introduced in the heteroepitaxial growth of barium titanate (BaTiO3) thin films. Heteroepitaxial BaTiO3 films were prepared on a SrRuO3/SrTiO3 substrate by radio frequency (RF) magnetron sputtering with three kinds of deposition method: low RF-power deposition, 2-step deposition, and high power deposition. The crystallographic and ferroelectric properties were evaluated for the heteroepitaxial films. When the epitaxial capacitor was prepared by the 2-step deposition technique, the ferroelectric remanent polarization, 2Pr, was maximized. The optimized deposition condition to improve the crystal quality is discussed in terms of damage and diffusion, which could be introduced into the oxide films during the epitaxial growth, and controlled by the RF-power and deposition time, respectively.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_6_796/_p
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@ARTICLE{e84-c_6_796,
author={Naoko YANASE, Kazuhide ABE, Noburu FUKUSHIMA, Takashi KAWAKUBO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Improvement of Ferroelectric Hysteresis Curves in Epitaxial BaTiO3 Film Capacitors by 2-Step Deposition},
year={2001},
volume={E84-C},
number={6},
pages={796-801},
abstract={A 2-step deposition technique was introduced in the heteroepitaxial growth of barium titanate (BaTiO3) thin films. Heteroepitaxial BaTiO3 films were prepared on a SrRuO3/SrTiO3 substrate by radio frequency (RF) magnetron sputtering with three kinds of deposition method: low RF-power deposition, 2-step deposition, and high power deposition. The crystallographic and ferroelectric properties were evaluated for the heteroepitaxial films. When the epitaxial capacitor was prepared by the 2-step deposition technique, the ferroelectric remanent polarization, 2Pr, was maximized. The optimized deposition condition to improve the crystal quality is discussed in terms of damage and diffusion, which could be introduced into the oxide films during the epitaxial growth, and controlled by the RF-power and deposition time, respectively.},
keywords={},
doi={},
ISSN={},
month={June},}
Copier
TY - JOUR
TI - Improvement of Ferroelectric Hysteresis Curves in Epitaxial BaTiO3 Film Capacitors by 2-Step Deposition
T2 - IEICE TRANSACTIONS on Electronics
SP - 796
EP - 801
AU - Naoko YANASE
AU - Kazuhide ABE
AU - Noburu FUKUSHIMA
AU - Takashi KAWAKUBO
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2001
AB - A 2-step deposition technique was introduced in the heteroepitaxial growth of barium titanate (BaTiO3) thin films. Heteroepitaxial BaTiO3 films were prepared on a SrRuO3/SrTiO3 substrate by radio frequency (RF) magnetron sputtering with three kinds of deposition method: low RF-power deposition, 2-step deposition, and high power deposition. The crystallographic and ferroelectric properties were evaluated for the heteroepitaxial films. When the epitaxial capacitor was prepared by the 2-step deposition technique, the ferroelectric remanent polarization, 2Pr, was maximized. The optimized deposition condition to improve the crystal quality is discussed in terms of damage and diffusion, which could be introduced into the oxide films during the epitaxial growth, and controlled by the RF-power and deposition time, respectively.
ER -