The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Cet article passe en revue les technologies des dispositifs de mémoires flash, dont le marché a connu une croissance explosive en raison des avantages suivants : (1) leur faible coût fourni par la disponibilité de la cellule de type monotransistor avec l'adoption d'un fonctionnement par effacement de bloc ; (2) haute fonctionnalité en tant que mémoires non volatiles effaçables et programmables électriquement ; et (3) une fiabilité élevée grâce à la technologie mature des portes flottantes. En ce qui concerne les mémoires flash à accès aléatoire rapide, leur problème de mise à l'échelle, y compris une technologie à cellules multi-niveaux, est discuté, et les technologies à faible consommation d'énergie, très demandées pour les équipements électroniques mobiles, leur application principale, sont décrites. En outre, les technologies des dispositifs de mémoires flash à accès série, qui ont atteint un faible coût grâce à la réduction de la taille des cellules, sont également examinées. Enfin, une technologie prometteuse du concept NROM, qui permet d'obtenir une cellule multi-stockage avec un fonctionnement basse tension et un processus simple, est introduite.
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Takahiro OHNAKADO, Natsuo AJIKA, "Review of Device Technologies of Flash Memories" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 6, pp. 724-733, June 2001, doi: .
Abstract: This paper reviews device technologies of flash memories, whose market has grown explosively due to the advantages of: (1) their low cost provided by availability of the single-transistor type cell with adoption of block-erase operation; (2) high functionality as electrically erasable and programmable non-volatile memories; and (3) high reliability with the mature floating gate technology. As for fast-random-access flash memories, their scaling issue, including a multi-level-cell technology, is discussed, and technologies for low power consumption, which is highly demanded for mobile electronic equipment, their major application, are described. Furthermore, device technologies of serial-access flash memories, which have achieved low cost with cell-size reduction, are also reviewed. Finally, a future promising technology of the NROM concept, which achieves a multi-storage-cell with low voltage operation and a simple process, is introduced.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_6_724/_p
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@ARTICLE{e84-c_6_724,
author={Takahiro OHNAKADO, Natsuo AJIKA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Review of Device Technologies of Flash Memories},
year={2001},
volume={E84-C},
number={6},
pages={724-733},
abstract={This paper reviews device technologies of flash memories, whose market has grown explosively due to the advantages of: (1) their low cost provided by availability of the single-transistor type cell with adoption of block-erase operation; (2) high functionality as electrically erasable and programmable non-volatile memories; and (3) high reliability with the mature floating gate technology. As for fast-random-access flash memories, their scaling issue, including a multi-level-cell technology, is discussed, and technologies for low power consumption, which is highly demanded for mobile electronic equipment, their major application, are described. Furthermore, device technologies of serial-access flash memories, which have achieved low cost with cell-size reduction, are also reviewed. Finally, a future promising technology of the NROM concept, which achieves a multi-storage-cell with low voltage operation and a simple process, is introduced.},
keywords={},
doi={},
ISSN={},
month={June},}
Copier
TY - JOUR
TI - Review of Device Technologies of Flash Memories
T2 - IEICE TRANSACTIONS on Electronics
SP - 724
EP - 733
AU - Takahiro OHNAKADO
AU - Natsuo AJIKA
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2001
AB - This paper reviews device technologies of flash memories, whose market has grown explosively due to the advantages of: (1) their low cost provided by availability of the single-transistor type cell with adoption of block-erase operation; (2) high functionality as electrically erasable and programmable non-volatile memories; and (3) high reliability with the mature floating gate technology. As for fast-random-access flash memories, their scaling issue, including a multi-level-cell technology, is discussed, and technologies for low power consumption, which is highly demanded for mobile electronic equipment, their major application, are described. Furthermore, device technologies of serial-access flash memories, which have achieved low cost with cell-size reduction, are also reviewed. Finally, a future promising technology of the NROM concept, which achieves a multi-storage-cell with low voltage operation and a simple process, is introduced.
ER -