The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Cet article décrit les performances de puissance de fonctionnement de 1.0 V d'un FET à hétérojonction AlGaAs/InGaAs/AlGaAs double dopé pour téléphones cellulaires numériques personnels. Le FET développé avec un capuchon multicouche constitué d'un GaAs hautement dopé au Si, d'un GaAs non dopé et d'un AlGaAs hautement dopé au Si présentait une résistance à l'état passant de 1.3 Ω.
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Takehiko KATO, Yasunori BITO, Naotaka IWATA, "1.0 V Operation Power Heterojunction FET for Digital Cellular Phones" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 2, pp. 249-252, February 2001, doi: .
Abstract: This paper describes 1.0 V operation power performance of a double doped AlGaAs/InGaAs/AlGaAs heterojunction FET for personal digital cellular phones. The developed FET with a multilayer cap consisting of a highly Si-doped GaAs, an undoped GaAs and a highly Si-doped AlGaAs exhibited an on-resistance of 1.3 Ω
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_2_249/_p
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@ARTICLE{e84-c_2_249,
author={Takehiko KATO, Yasunori BITO, Naotaka IWATA, },
journal={IEICE TRANSACTIONS on Electronics},
title={1.0 V Operation Power Heterojunction FET for Digital Cellular Phones},
year={2001},
volume={E84-C},
number={2},
pages={249-252},
abstract={This paper describes 1.0 V operation power performance of a double doped AlGaAs/InGaAs/AlGaAs heterojunction FET for personal digital cellular phones. The developed FET with a multilayer cap consisting of a highly Si-doped GaAs, an undoped GaAs and a highly Si-doped AlGaAs exhibited an on-resistance of 1.3 Ω
keywords={},
doi={},
ISSN={},
month={February},}
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TY - JOUR
TI - 1.0 V Operation Power Heterojunction FET for Digital Cellular Phones
T2 - IEICE TRANSACTIONS on Electronics
SP - 249
EP - 252
AU - Takehiko KATO
AU - Yasunori BITO
AU - Naotaka IWATA
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 2001
AB - This paper describes 1.0 V operation power performance of a double doped AlGaAs/InGaAs/AlGaAs heterojunction FET for personal digital cellular phones. The developed FET with a multilayer cap consisting of a highly Si-doped GaAs, an undoped GaAs and a highly Si-doped AlGaAs exhibited an on-resistance of 1.3 Ω
ER -