The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Les auteurs ont développé des MMIC à transistors à haute mobilité électronique (HEMT) en bande V adoptant des couches minces de benzo-cyclo-butène (BCB) sur des substrats GaAs. Étant donné que les couches minces BCB, qui peuvent modifier l'épaisseur de parties arbitraires d'un circuit, sont utilisées pour ces MMIC, à la fois une ligne microruban à couche mince (TFMS), offrant les avantages d'une grande flexibilité de disposition et de petite taille, et un guide d'ondes coplanaire (CPW), offrant l'avantage d'une faible perte, peut être utilisé selon l'objectif du MMIC. Nous présentons ici les quatre types de MMIC en bande V que nous avons fabriqués : amplificateur à faible bruit (LNA), mélangeur, oscillateur contrôlé en tension (VCO) et amplificateur de puissance (PA). Les lignes de transmission optimales ont été choisies parmi la ligne TFMS et le CPW pour ces MMIC. La miniaturisation du LNA MMIC et du mélangeur MMIC a été obtenue grâce à l'adoption de la gamme TFMS, tandis que l'adoption du CPW a permis au VCO MMIC d'atteindre des performances élevées. Ces résultats indiquent qu'il est important de choisir la ligne de transmission optimale en fonction de l'objectif de la fonction du circuit pour chaque MMIC. Il a été confirmé que ces MMIC nouvellement développés utilisant les couches diélectriques à couches minces BCB sont attrayants pour les applications à ondes millimétriques.
BCB, couche mince, bande V, HEMT, MMIC
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Copier
Naoko ONO, Keiichi YAMAGUCHI, Minoru AMANO, Masayuki SUGIURA, Yuji ISEKI, Eiji TAKAGI, "V-Band HEMT MMICs Using BCB Thin-Film Layers on GaAs Substrates" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 10, pp. 1528-1534, October 2001, doi: .
Abstract: The authors have developed V-band high electron mobility transistor (HEMT) MMICs adopting benzo-cyclo-butene (BCB) thin-film layers on GaAs substrates. Since the BCB thin-film layers, which can change the thickness of arbitrary parts on a circuit, are used for these MMICs, both a thin-film microstrip (TFMS) line, offering the advantages of great flexibility in layout and small size, and a coplanar waveguide (CPW), offering the advantage of low loss, can be used according to the purpose of the MMIC. Here we introduce the four types of V-band MMICs that we fabricated: low noise amplifier (LNA), mixer, voltage controlled oscillator (VCO), and power amplifier (PA). The optimum transmission lines were chosen from the TFMS line and the CPW for these MMICs. Miniaturization of the LNA MMIC and the mixer MMIC were attained by adopting the TFMS line, whereas adoption of the CPW enabled the VCO MMIC to achieve high performance. These results indicate that it is important to choose the optimum transmission line according to the purpose of the circuit function for each MMIC. It was confirmed that these newly developed MMICs using the BCB thin-film dielectric layers are attractive for millimeter-wave applications.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_10_1528/_p
Copier
@ARTICLE{e84-c_10_1528,
author={Naoko ONO, Keiichi YAMAGUCHI, Minoru AMANO, Masayuki SUGIURA, Yuji ISEKI, Eiji TAKAGI, },
journal={IEICE TRANSACTIONS on Electronics},
title={V-Band HEMT MMICs Using BCB Thin-Film Layers on GaAs Substrates},
year={2001},
volume={E84-C},
number={10},
pages={1528-1534},
abstract={The authors have developed V-band high electron mobility transistor (HEMT) MMICs adopting benzo-cyclo-butene (BCB) thin-film layers on GaAs substrates. Since the BCB thin-film layers, which can change the thickness of arbitrary parts on a circuit, are used for these MMICs, both a thin-film microstrip (TFMS) line, offering the advantages of great flexibility in layout and small size, and a coplanar waveguide (CPW), offering the advantage of low loss, can be used according to the purpose of the MMIC. Here we introduce the four types of V-band MMICs that we fabricated: low noise amplifier (LNA), mixer, voltage controlled oscillator (VCO), and power amplifier (PA). The optimum transmission lines were chosen from the TFMS line and the CPW for these MMICs. Miniaturization of the LNA MMIC and the mixer MMIC were attained by adopting the TFMS line, whereas adoption of the CPW enabled the VCO MMIC to achieve high performance. These results indicate that it is important to choose the optimum transmission line according to the purpose of the circuit function for each MMIC. It was confirmed that these newly developed MMICs using the BCB thin-film dielectric layers are attractive for millimeter-wave applications.},
keywords={},
doi={},
ISSN={},
month={October},}
Copier
TY - JOUR
TI - V-Band HEMT MMICs Using BCB Thin-Film Layers on GaAs Substrates
T2 - IEICE TRANSACTIONS on Electronics
SP - 1528
EP - 1534
AU - Naoko ONO
AU - Keiichi YAMAGUCHI
AU - Minoru AMANO
AU - Masayuki SUGIURA
AU - Yuji ISEKI
AU - Eiji TAKAGI
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2001
AB - The authors have developed V-band high electron mobility transistor (HEMT) MMICs adopting benzo-cyclo-butene (BCB) thin-film layers on GaAs substrates. Since the BCB thin-film layers, which can change the thickness of arbitrary parts on a circuit, are used for these MMICs, both a thin-film microstrip (TFMS) line, offering the advantages of great flexibility in layout and small size, and a coplanar waveguide (CPW), offering the advantage of low loss, can be used according to the purpose of the MMIC. Here we introduce the four types of V-band MMICs that we fabricated: low noise amplifier (LNA), mixer, voltage controlled oscillator (VCO), and power amplifier (PA). The optimum transmission lines were chosen from the TFMS line and the CPW for these MMICs. Miniaturization of the LNA MMIC and the mixer MMIC were attained by adopting the TFMS line, whereas adoption of the CPW enabled the VCO MMIC to achieve high performance. These results indicate that it is important to choose the optimum transmission line according to the purpose of the circuit function for each MMIC. It was confirmed that these newly developed MMICs using the BCB thin-film dielectric layers are attractive for millimeter-wave applications.
ER -