The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Les transistors à effet de champ à hétérostructure silicium-germanium ont été proposés comme une extension prometteuse des technologies CMOS offrant des performances améliorées dans des géométries détendues. Le potentiel du MOS à hétérostructure SiGe et du FET à hétérostructure en régime de fonctionnement à faible puissance est particulièrement prometteur. Nous discutons des techniques de conception de circuits applicables dans le régime de micropuissance qui peuvent être appliquées aux technologies SiGe HMOS. Nous passons ensuite en revue les résultats récents en HMOS tant du point de vue des matériaux que des applications. Nous concluons en rapportant des résultats de simulation indiquant le potentiel du SiGe HMOS dans les applications de micropuissance radiofréquence.
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Christos PAPAVASSILIOU, Kristel FOBELETS, Chris TOUMAZOU, "SiGe Hetero-FETs Potential for Micropower Applications" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 10, pp. 1414-1422, October 2001, doi: .
Abstract: Silicon Germanium Heterostructure field effect transistors have been proposed as a promising extension to the CMOS technologies affording enhanced performance at relaxed geometries. Particularly promising is the potential of SiGe Heterostructure MOS and Heterostrucure FET at the low power operating regime. We discuss circuit design techniques applicable in the micropower regime which can be applied to SiGe HMOS technologies. We then review recent results in HMOS both from the material and the applications point of view. We conclude by reporting simulation results indicating the potential of SiGe HMOS in radiofrequency micropower applications.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_10_1414/_p
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@ARTICLE{e84-c_10_1414,
author={Christos PAPAVASSILIOU, Kristel FOBELETS, Chris TOUMAZOU, },
journal={IEICE TRANSACTIONS on Electronics},
title={SiGe Hetero-FETs Potential for Micropower Applications},
year={2001},
volume={E84-C},
number={10},
pages={1414-1422},
abstract={Silicon Germanium Heterostructure field effect transistors have been proposed as a promising extension to the CMOS technologies affording enhanced performance at relaxed geometries. Particularly promising is the potential of SiGe Heterostructure MOS and Heterostrucure FET at the low power operating regime. We discuss circuit design techniques applicable in the micropower regime which can be applied to SiGe HMOS technologies. We then review recent results in HMOS both from the material and the applications point of view. We conclude by reporting simulation results indicating the potential of SiGe HMOS in radiofrequency micropower applications.},
keywords={},
doi={},
ISSN={},
month={October},}
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TY - JOUR
TI - SiGe Hetero-FETs Potential for Micropower Applications
T2 - IEICE TRANSACTIONS on Electronics
SP - 1414
EP - 1422
AU - Christos PAPAVASSILIOU
AU - Kristel FOBELETS
AU - Chris TOUMAZOU
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2001
AB - Silicon Germanium Heterostructure field effect transistors have been proposed as a promising extension to the CMOS technologies affording enhanced performance at relaxed geometries. Particularly promising is the potential of SiGe Heterostructure MOS and Heterostrucure FET at the low power operating regime. We discuss circuit design techniques applicable in the micropower regime which can be applied to SiGe HMOS technologies. We then review recent results in HMOS both from the material and the applications point of view. We conclude by reporting simulation results indicating the potential of SiGe HMOS in radiofrequency micropower applications.
ER -