The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Le bruit basse fréquence des HEMT pseudomorphes InGaAs fabriqués sur un substrat GaAs a été étudié. La dépendance de la densité spectrale du bruit sur la tension de grille indique que le canal du dispositif domine le bruit basse fréquence. Un bruit de génération-recombinaison (GR) a été observé sous forme de renflements superposés sur un fond de 1/f. L'énergie d'activation du bruit GR était de 0.32 à 0.39 eV, ce qui est proche de celle du centre DX, ce qui suggère que l'origine du bruit GR est le centre DX dans la couche barrière AlGaAs. Un petit renflement a été observé dans le bruit du courant de grille des HEMT avec de grandes fractions molaires d'InAs de 0.4 et 0.5. La génération de pièges avec des constantes de temps différentes peut expliquer ce comportement.
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Takashi MIZUTANI, Makoto YAMAMOTO, Shigeru KISHIMOTO, Koichi MAEZAWA, "Low-Frequency Noise Characteristics of AlGaAs/InGaAs Pseudomorphic HEMTs" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 10, pp. 1318-1322, October 2001, doi: .
Abstract: The low-frequency noise of InGaAs pseudomorphic HEMTs fabricated on GaAs substrate was studied. The dependence of the noise spectral density on the gate voltage indicates that the channel of the device dominates the low-frequency noise. Generation-recombination (G-R) noise was observed in the form of bulges superimposed on a background of 1/f. The activation energyof the G-R noise was 0.32-0.39 eV which is close to that of the DX center, suggesting that the origin of the G-R noise is the DX center in the AlGaAs barrier layer. Little bulge was observed in the gate current noise of the HEMTs with large InAs mole fractions of 0.4 and 0.5. Generation of the traps with different time constant can explain this behavior.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_10_1318/_p
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@ARTICLE{e84-c_10_1318,
author={Takashi MIZUTANI, Makoto YAMAMOTO, Shigeru KISHIMOTO, Koichi MAEZAWA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Low-Frequency Noise Characteristics of AlGaAs/InGaAs Pseudomorphic HEMTs},
year={2001},
volume={E84-C},
number={10},
pages={1318-1322},
abstract={The low-frequency noise of InGaAs pseudomorphic HEMTs fabricated on GaAs substrate was studied. The dependence of the noise spectral density on the gate voltage indicates that the channel of the device dominates the low-frequency noise. Generation-recombination (G-R) noise was observed in the form of bulges superimposed on a background of 1/f. The activation energyof the G-R noise was 0.32-0.39 eV which is close to that of the DX center, suggesting that the origin of the G-R noise is the DX center in the AlGaAs barrier layer. Little bulge was observed in the gate current noise of the HEMTs with large InAs mole fractions of 0.4 and 0.5. Generation of the traps with different time constant can explain this behavior.},
keywords={},
doi={},
ISSN={},
month={October},}
Copier
TY - JOUR
TI - Low-Frequency Noise Characteristics of AlGaAs/InGaAs Pseudomorphic HEMTs
T2 - IEICE TRANSACTIONS on Electronics
SP - 1318
EP - 1322
AU - Takashi MIZUTANI
AU - Makoto YAMAMOTO
AU - Shigeru KISHIMOTO
AU - Koichi MAEZAWA
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2001
AB - The low-frequency noise of InGaAs pseudomorphic HEMTs fabricated on GaAs substrate was studied. The dependence of the noise spectral density on the gate voltage indicates that the channel of the device dominates the low-frequency noise. Generation-recombination (G-R) noise was observed in the form of bulges superimposed on a background of 1/f. The activation energyof the G-R noise was 0.32-0.39 eV which is close to that of the DX center, suggesting that the origin of the G-R noise is the DX center in the AlGaAs barrier layer. Little bulge was observed in the gate current noise of the HEMTs with large InAs mole fractions of 0.4 and 0.5. Generation of the traps with different time constant can explain this behavior.
ER -