The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Des transistors à haute mobilité électronique (HEMT) à base d'InP avec des longueurs de grille réduites à 30 nm ont été fabriqués et caractérisés, et l'effet de l'évidement de la grille sur les caractéristiques haute fréquence a été étudié. La fréquence de coupure, qui est considérée comme fonction de la longueur de grille et de la vitesse moyenne du porteur dans une approximation du premier ordre, dépend de la taille de l'évidement de grille lorsque la longueur de grille devient courte. La taille de l'évidement de la grille est optimisée en tenant compte de la capacité de rétroaction et de la résistance parasite. Pour les HEMT ayant un évidement de grille avec une surface InP, un élargissement approprié de l'évidement de grille donne une fréquence de coupure record de 368 GHz pour les HEMT à porte de 30 nm avec un canal adapté au réseau.
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Tetsuya SUEMITSU, Tetsuyoshi ISHII, Yasunobu ISHII, "Gate and Recess Engineering for Ultrahigh-Speed InP-Based HEMTs" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 10, pp. 1283-1288, October 2001, doi: .
Abstract: InP-based high electron mobility transistors (HEMTs) with gate lengths reduced to 30 nm were fabricated and characterized, and the effect of the gate recess on the high-frequency characteristics was studied. The cutoff frequency, which is regarded as a function of the gate length and the average carrier velocity in a first-order approximation, depends on the size of the gate recess when the gate length becomes short. The size of the gate recess is optimized by taking the feed-back capacitance and the parasitic resistance into account. For HEMTs having the gate recess with an InP surface, an appropriate widening of the gate recess gives a record cutoff frequency of 368 GHz for the 30-nm-gate HEMTs with a lattice-matched channel.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_10_1283/_p
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@ARTICLE{e84-c_10_1283,
author={Tetsuya SUEMITSU, Tetsuyoshi ISHII, Yasunobu ISHII, },
journal={IEICE TRANSACTIONS on Electronics},
title={Gate and Recess Engineering for Ultrahigh-Speed InP-Based HEMTs},
year={2001},
volume={E84-C},
number={10},
pages={1283-1288},
abstract={InP-based high electron mobility transistors (HEMTs) with gate lengths reduced to 30 nm were fabricated and characterized, and the effect of the gate recess on the high-frequency characteristics was studied. The cutoff frequency, which is regarded as a function of the gate length and the average carrier velocity in a first-order approximation, depends on the size of the gate recess when the gate length becomes short. The size of the gate recess is optimized by taking the feed-back capacitance and the parasitic resistance into account. For HEMTs having the gate recess with an InP surface, an appropriate widening of the gate recess gives a record cutoff frequency of 368 GHz for the 30-nm-gate HEMTs with a lattice-matched channel.},
keywords={},
doi={},
ISSN={},
month={October},}
Copier
TY - JOUR
TI - Gate and Recess Engineering for Ultrahigh-Speed InP-Based HEMTs
T2 - IEICE TRANSACTIONS on Electronics
SP - 1283
EP - 1288
AU - Tetsuya SUEMITSU
AU - Tetsuyoshi ISHII
AU - Yasunobu ISHII
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2001
AB - InP-based high electron mobility transistors (HEMTs) with gate lengths reduced to 30 nm were fabricated and characterized, and the effect of the gate recess on the high-frequency characteristics was studied. The cutoff frequency, which is regarded as a function of the gate length and the average carrier velocity in a first-order approximation, depends on the size of the gate recess when the gate length becomes short. The size of the gate recess is optimized by taking the feed-back capacitance and the parasitic resistance into account. For HEMTs having the gate recess with an InP surface, an appropriate widening of the gate recess gives a record cutoff frequency of 368 GHz for the 30-nm-gate HEMTs with a lattice-matched channel.
ER -