The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Contamination au silicone due au SiO2 provoqué par la décomposition des vapeurs de silicone est reconnu comme un phénomène indésirable dans les applications de contact électrique. Les effets de la vapeur de silicone adsorbée sur la surface de contact ont été examinés à l'aide de contacts à microrelais. La quantité de SiO2 formé par la décomposition de la vapeur de silicone devrait dépendre de la quantité de vapeur de silicone adsorbée sur la surface de contact. Ainsi, tout d’abord, une augmentation de l’épaisseur du film provenant de la vapeur de silicone adsorbée en fonction du temps d’exposition a été clarifiée pour l’état statique de la surface. L'épaisseur du film de vapeur de silicone adsorbée augmente proportionnellement au temps d'exposition et sature en une fine monocouche. De plus, pendant cette période d’exposition, l’épaisseur était affectée par la concentration de la vapeur de silicone. Une fois l'épaisseur de la couche moléculaire saturée, l'épaisseur de la couche n'est plus influencée par la concentration de la vapeur de silicone. Ensuite, de ces résultats obtenus par examen de l'exposition à l'état statique, on peut déduire ce qui suit. La molécule de silicone s'adsorbe facilement sur la surface de contact pendant la période d'ouverture des contacts d'établissement et de rupture ainsi qu'à l'état statique. Comme le temps d'ouverture des contacts détermine le temps d'exposition, la quantité de molécules de silicone adsorbées dépend du taux de commutation (opérations par seconde). Une défaillance de contact due à une augmentation de la résistance de contact peut être affectée par le taux de commutation dans un environnement silicone. En conséquence, les caractéristiques de résistance de contact ont été examinées sur une large plage de taux de commutation. Il a été constaté que le nombre d'opérations jusqu'à la défaillance du contact était nettement affecté par le taux de commutation. À savoir, le nombre d'opérations jusqu'à la défaillance du contact diminue à mesure que le taux de commutation augmente. Cependant, une fois qu’une couche très mince telle qu’une monocouche s’est formée, l’épaisseur du film cesse de croître. En conséquence, une fois la couche très mince formée, l'apparition d'une défaillance de contact ne dépend pas de la concentration de silicone ni de la vitesse de commutation.
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Terutaka TAMAI, "Adsorption of Silicone Vapor on the Contact Surface and Its Effect on Contact Failure of Micro Relays" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 9, pp. 1402-1408, September 2000, doi: .
Abstract: Silicone contamination due to SiO2 caused by decomposition of silicone vapor is recognized as an undesirable phenomenon in electrical contact applications. The effects of silicone vapor adsorbed on the contact surface were examined by using micro relay contacts. The amount of SiO2 formed by the decomposition of silicone vapor is expected to depend on the amount of silicone vapor adsorbed on the contact surface. Hence, first of all, an increase in the thickness of the film from the adsorbed silicone vapor as a function of exposure time was clarified for the static state of the surface. The thickness of the film of adsorbed silicone vapor increased in proportion to exposure time and saturated at a thin monolayer. Moreover, in this exposure period, the thickness was affected by the concentration of the silicone vapor. After the thickness of the molecular layer saturated, the thickness of the layer was not influenced by the concentration of the silicone vapor. Next, from these results obtained by examination of exposure in the static state, the following is deducible. The silicone molecule adsorbs easily on the contact surface during the opening period of making and breaking contacts as well as in the static state. As the time the contacts are open determines the exposure time, the amount of adsorbed silicone molecules depends on the switching rate (operation per second). Contact failure due to increases in contact resistance might be affected by the switching rate in a silicone environment. Accordingly, contact resistance characteristic was examined over a wide range of switching rates. It was found that number of operations up to contact failure was affected markedly by the switching rate. Namely, the number of operations up to contact failure decreases as the switching rate increases. However, once a very thin layer such as the monolayer has formed, the film thickness ceases to grow. Accordingly, after the very thin layer is formed, the occurrence of contact failure does not depend on the concentration of silicone and the switching rate.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_9_1402/_p
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@ARTICLE{e83-c_9_1402,
author={Terutaka TAMAI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Adsorption of Silicone Vapor on the Contact Surface and Its Effect on Contact Failure of Micro Relays},
year={2000},
volume={E83-C},
number={9},
pages={1402-1408},
abstract={Silicone contamination due to SiO2 caused by decomposition of silicone vapor is recognized as an undesirable phenomenon in electrical contact applications. The effects of silicone vapor adsorbed on the contact surface were examined by using micro relay contacts. The amount of SiO2 formed by the decomposition of silicone vapor is expected to depend on the amount of silicone vapor adsorbed on the contact surface. Hence, first of all, an increase in the thickness of the film from the adsorbed silicone vapor as a function of exposure time was clarified for the static state of the surface. The thickness of the film of adsorbed silicone vapor increased in proportion to exposure time and saturated at a thin monolayer. Moreover, in this exposure period, the thickness was affected by the concentration of the silicone vapor. After the thickness of the molecular layer saturated, the thickness of the layer was not influenced by the concentration of the silicone vapor. Next, from these results obtained by examination of exposure in the static state, the following is deducible. The silicone molecule adsorbs easily on the contact surface during the opening period of making and breaking contacts as well as in the static state. As the time the contacts are open determines the exposure time, the amount of adsorbed silicone molecules depends on the switching rate (operation per second). Contact failure due to increases in contact resistance might be affected by the switching rate in a silicone environment. Accordingly, contact resistance characteristic was examined over a wide range of switching rates. It was found that number of operations up to contact failure was affected markedly by the switching rate. Namely, the number of operations up to contact failure decreases as the switching rate increases. However, once a very thin layer such as the monolayer has formed, the film thickness ceases to grow. Accordingly, after the very thin layer is formed, the occurrence of contact failure does not depend on the concentration of silicone and the switching rate.},
keywords={},
doi={},
ISSN={},
month={September},}
Copier
TY - JOUR
TI - Adsorption of Silicone Vapor on the Contact Surface and Its Effect on Contact Failure of Micro Relays
T2 - IEICE TRANSACTIONS on Electronics
SP - 1402
EP - 1408
AU - Terutaka TAMAI
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 2000
AB - Silicone contamination due to SiO2 caused by decomposition of silicone vapor is recognized as an undesirable phenomenon in electrical contact applications. The effects of silicone vapor adsorbed on the contact surface were examined by using micro relay contacts. The amount of SiO2 formed by the decomposition of silicone vapor is expected to depend on the amount of silicone vapor adsorbed on the contact surface. Hence, first of all, an increase in the thickness of the film from the adsorbed silicone vapor as a function of exposure time was clarified for the static state of the surface. The thickness of the film of adsorbed silicone vapor increased in proportion to exposure time and saturated at a thin monolayer. Moreover, in this exposure period, the thickness was affected by the concentration of the silicone vapor. After the thickness of the molecular layer saturated, the thickness of the layer was not influenced by the concentration of the silicone vapor. Next, from these results obtained by examination of exposure in the static state, the following is deducible. The silicone molecule adsorbs easily on the contact surface during the opening period of making and breaking contacts as well as in the static state. As the time the contacts are open determines the exposure time, the amount of adsorbed silicone molecules depends on the switching rate (operation per second). Contact failure due to increases in contact resistance might be affected by the switching rate in a silicone environment. Accordingly, contact resistance characteristic was examined over a wide range of switching rates. It was found that number of operations up to contact failure was affected markedly by the switching rate. Namely, the number of operations up to contact failure decreases as the switching rate increases. However, once a very thin layer such as the monolayer has formed, the film thickness ceases to grow. Accordingly, after the very thin layer is formed, the occurrence of contact failure does not depend on the concentration of silicone and the switching rate.
ER -