The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Cet article rend compte de la mise en œuvre en trois dimensions (3D) de modèles de diffusion de dopants implantés à faible dose dans le silicium et des différentes problématiques numériques qui y sont associées. Afin de permettre aux utilisateurs finaux de choisir entre une grande précision ou un temps de calcul réduit, un modèle de diffusion conventionnel et à 5 espèces a été implémenté dans le module 3D DIFOX-3D appartenant à la plateforme PROMPT. Par comparaison avec des simulations unidimensionnelles et bidimensionnelles (1D et 2D) réalisées avec IMPACT-4, où des modèles calibrés existent, la validité de ces modèles 3D a été vérifiée. Enfin, les résultats obtenus pour une simulation tridimensionnelle d'une étape de recuit thermique rapide impliquée dans la fabrication d'un transistor MOS sont présentés, ce qui montre la capacité de ce module à gérer l'optimisation de dispositifs réels.
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Vincent SENEZ, Jerome HERBAUX, Thomas HOFFMANN, Evelyne LAMPIN, "3-Dimensional Process Simulation of Thermal Annealing of Low Dose Implanted Dopants in Silicon" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 8, pp. 1267-1274, August 2000, doi: .
Abstract: This paper reports the implementation in three dimensions (3D) of diffusion models for low dose implanted dopants in silicon and the various numerical issues associated with it. In order to allow the end-users to choose between high accuracy or small calculation time, a conventional and 5-species diffusion models have been implemented in the 3D module DIFOX-3D belonging to the PROMPT plateform. By comparison with one and two-dimensional (1D and 2D) simulations performed with IMPACT-4, where calibrated models exist, the validity of this 3D models have been checked. Finally, the results obtained for a 3-dimensional simulation of a rapid thermal annealing step involved in the manufacturing of a MOS transistor are presented what show the capability of this module to handle the optimization of real devices.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_8_1267/_p
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@ARTICLE{e83-c_8_1267,
author={Vincent SENEZ, Jerome HERBAUX, Thomas HOFFMANN, Evelyne LAMPIN, },
journal={IEICE TRANSACTIONS on Electronics},
title={3-Dimensional Process Simulation of Thermal Annealing of Low Dose Implanted Dopants in Silicon},
year={2000},
volume={E83-C},
number={8},
pages={1267-1274},
abstract={This paper reports the implementation in three dimensions (3D) of diffusion models for low dose implanted dopants in silicon and the various numerical issues associated with it. In order to allow the end-users to choose between high accuracy or small calculation time, a conventional and 5-species diffusion models have been implemented in the 3D module DIFOX-3D belonging to the PROMPT plateform. By comparison with one and two-dimensional (1D and 2D) simulations performed with IMPACT-4, where calibrated models exist, the validity of this 3D models have been checked. Finally, the results obtained for a 3-dimensional simulation of a rapid thermal annealing step involved in the manufacturing of a MOS transistor are presented what show the capability of this module to handle the optimization of real devices.},
keywords={},
doi={},
ISSN={},
month={August},}
Copier
TY - JOUR
TI - 3-Dimensional Process Simulation of Thermal Annealing of Low Dose Implanted Dopants in Silicon
T2 - IEICE TRANSACTIONS on Electronics
SP - 1267
EP - 1274
AU - Vincent SENEZ
AU - Jerome HERBAUX
AU - Thomas HOFFMANN
AU - Evelyne LAMPIN
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2000
AB - This paper reports the implementation in three dimensions (3D) of diffusion models for low dose implanted dopants in silicon and the various numerical issues associated with it. In order to allow the end-users to choose between high accuracy or small calculation time, a conventional and 5-species diffusion models have been implemented in the 3D module DIFOX-3D belonging to the PROMPT plateform. By comparison with one and two-dimensional (1D and 2D) simulations performed with IMPACT-4, where calibrated models exist, the validity of this 3D models have been checked. Finally, the results obtained for a 3-dimensional simulation of a rapid thermal annealing step involved in the manufacturing of a MOS transistor are presented what show the capability of this module to handle the optimization of real devices.
ER -