The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Nous avons fabriqué une structure de transistor à induction statique en utilisant des films de phtalocyanine de cuivre (CuPc). Sa structure en couches est Au(drain)/CuPc/Al(gate)/CuPc/Au(source)/verre. Le courant source-drain est contrôlé par la tension de polarisation de la grille Al lorsque la tension de drain est positive mais en est presque indépendant lorsque la tension de drain est négative. Les caractéristiques courant-tension sont régies par la conduction limitée par la charge d'espace qui dépend de pièges peu profonds.
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Shigekazu KUNIYOSHI, Masaaki IIZUKA, Kazuhiro KUDO, Kuniaki TANAKA, "Space-Charge Conduction in a Copper Phthalocyanine Static Induction Transistor" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 7, pp. 1111-1113, July 2000, doi: .
Abstract: We have fabricated a static induction transistor structure by using copper phthalocyanine (CuPc) films. Its layer-structure is Au(drain)/CuPc/Al(gate)/CuPc/Au(source)/glass. The source-drain current is controlled by the Al gate bias-voltage when the drain voltage is positive but is almost independent of it when the drain voltage is negative. The current-voltage characteristics are governed by the space-charge-limited conduction which depends on shallow traps.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_7_1111/_p
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@ARTICLE{e83-c_7_1111,
author={Shigekazu KUNIYOSHI, Masaaki IIZUKA, Kazuhiro KUDO, Kuniaki TANAKA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Space-Charge Conduction in a Copper Phthalocyanine Static Induction Transistor},
year={2000},
volume={E83-C},
number={7},
pages={1111-1113},
abstract={We have fabricated a static induction transistor structure by using copper phthalocyanine (CuPc) films. Its layer-structure is Au(drain)/CuPc/Al(gate)/CuPc/Au(source)/glass. The source-drain current is controlled by the Al gate bias-voltage when the drain voltage is positive but is almost independent of it when the drain voltage is negative. The current-voltage characteristics are governed by the space-charge-limited conduction which depends on shallow traps.},
keywords={},
doi={},
ISSN={},
month={July},}
Copier
TY - JOUR
TI - Space-Charge Conduction in a Copper Phthalocyanine Static Induction Transistor
T2 - IEICE TRANSACTIONS on Electronics
SP - 1111
EP - 1113
AU - Shigekazu KUNIYOSHI
AU - Masaaki IIZUKA
AU - Kazuhiro KUDO
AU - Kuniaki TANAKA
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2000
AB - We have fabricated a static induction transistor structure by using copper phthalocyanine (CuPc) films. Its layer-structure is Au(drain)/CuPc/Al(gate)/CuPc/Au(source)/glass. The source-drain current is controlled by the Al gate bias-voltage when the drain voltage is positive but is almost independent of it when the drain voltage is negative. The current-voltage characteristics are governed by the space-charge-limited conduction which depends on shallow traps.
ER -