The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Le transport par photoporteur du poly(3-hexylthiophène) P3HT régioréatoire dans une configuration de cellule sandwich ITO/P3HT/Al a été étudié au moyen de la technique du temps de vol. Il a été constaté que les caractéristiques de la diode Schottky et l'ampleur de la mobilité des trous sont affectées par les impuretés impliquées lors de la synthèse. La mobilité des trous dans le P3HT régio-aléatoire à température ambiante a été estimée à 2.4.
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Shyam S. PANDEY, Wataru TAKASHIMA, Shuichi NAGAMATSU, Keiichi KANETO, "Effect of Synthetic Impurities on Photocarrier Transport in Poly(3-Hexylthiophene)" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 7, pp. 1088-1093, July 2000, doi: .
Abstract: Photocarrier transport of regiorandom poly(3-hexylthiophene) P3HT in ITO/P3HT/Al sandwich cell configuration has been investigated by means of Time-of-Flight technique. Characteristics of Schottky diode and the magnitude of hole mobility have been found to be affected by impurities involved during the synthesis. The hole mobility in regiorandom P3HT at room temperature has been estimated to be 2.4
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_7_1088/_p
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@ARTICLE{e83-c_7_1088,
author={Shyam S. PANDEY, Wataru TAKASHIMA, Shuichi NAGAMATSU, Keiichi KANETO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Effect of Synthetic Impurities on Photocarrier Transport in Poly(3-Hexylthiophene)},
year={2000},
volume={E83-C},
number={7},
pages={1088-1093},
abstract={Photocarrier transport of regiorandom poly(3-hexylthiophene) P3HT in ITO/P3HT/Al sandwich cell configuration has been investigated by means of Time-of-Flight technique. Characteristics of Schottky diode and the magnitude of hole mobility have been found to be affected by impurities involved during the synthesis. The hole mobility in regiorandom P3HT at room temperature has been estimated to be 2.4
keywords={},
doi={},
ISSN={},
month={July},}
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TY - JOUR
TI - Effect of Synthetic Impurities on Photocarrier Transport in Poly(3-Hexylthiophene)
T2 - IEICE TRANSACTIONS on Electronics
SP - 1088
EP - 1093
AU - Shyam S. PANDEY
AU - Wataru TAKASHIMA
AU - Shuichi NAGAMATSU
AU - Keiichi KANETO
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2000
AB - Photocarrier transport of regiorandom poly(3-hexylthiophene) P3HT in ITO/P3HT/Al sandwich cell configuration has been investigated by means of Time-of-Flight technique. Characteristics of Schottky diode and the magnitude of hole mobility have been found to be affected by impurities involved during the synthesis. The hole mobility in regiorandom P3HT at room temperature has been estimated to be 2.4
ER -